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Datasheet: AH312-PCB1960 (WJ Communications)

 

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WJ Communications

Document Outline

This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
April
2003
The Communications Edge
TM
AH312
2 Watt, High Gain HBT Amplifier
Preliminary Product Information
Product Features
400 2300 MHz
+33 dBm P1dB
+49 dBm Output IP3
17 dB Gain @ 900 MHz
Single Positive Supply (+5 V)
SOIC-8 SMT Package
Product Description
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to superior achieve performance over a broad
frequency range with +49 dBm OIP3 and +33 dBm of
1-dB compressed output power. It is housed in an
industry standard SOIC-8 SMT package. All devices are
100% RF and DC tested.

The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH312 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram












Function Pin
No.
Vref 1
Input
3
Output
6, 7
Vbias 8
GND Slug
N/C or GND
2, 4, 5

Specifications
Parameters
Units Min Typ
Max
Frequency Range
MHz
400
2140
2300
S21 - Gain
dB
9
11
S11 - Input R.L.
dB
-15
S22 - Output R.L.
dB
-8
Output P1dB
dBm
+33
Output IP3
2
dBm
+49
Noise Figure
dB
9.0
IS-95 Channel Power
@ -65 dBc ACPR, 9 Ch .Fwd., 1960MHz
dBm
+22
W-CDMA Channel Power
@ -55 dBc ACPR, 2140 MHz
dBm +21
Operating Current Range
mA
700
800
900
Device Voltage
V
5

Test conditions unless otherwise noted. Specifications apply across entire frequency band.
1. T = 25C, Vsupply = +5 V, Frequency = 2140 MHz, in recommended application circuit
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.


Typical Performance
Parameters
Units
Typical
Frequency
MHz
880
1960
2140
S21 - Gain
dB
18
12
11
S11 - Input R.L.
dB
-15
-15
-15
S22 - Output R.L.
dB
-12
-8
-8
Output P1dB
dBm
+33
+33
+33
Output IP3
2
dBm
+46
+49
+49
Noise Figure
dB
8.0
8.0
9.0
Supply Bias
+5 V @ 800 mA

Typical parameters reflect performance in recommended application circuit:


Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
RF Input Power (continuous)
+28 dBm
AH312
2 Watt, High Linearity HBT Amplifier
DC Voltage
+8 V
(Available in Tape & Reel)
DC Power
8 W
AH312-PCB1960 Fully assembled Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
1
2

3
4
8
7
6
5
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
April
2003
The Communications Edge
TM
AH312
2 Watt, High Gain HBT Amplifier
Preliminary Product Information
1960 MHz Application Circuit












Application Circuit PC Board Layout
Circuit Board Material: .014" FR-4, 4 layers (others added for rigidity), .062" total thickness, 1 oz copper
NOTES:
Install R4 for single supply voltage control.. Remove R4 to adjust bias using V
REF
or adjust bias by changing R1. Align C8 at point E and C9 at point 2.
S11
S21
S22
1500
2000
2500
Frequency (MHz)
Performance
-20
-15
-10
-5
0
5
10
15
20
(d
B
)
S21
S11
S22
C8
2.2 pF (E)
RF IN
4.7 nH
L2
22 pF
C1
4.7 pF
C2
L = 5
L = 25
Z = 50
2, 4, 5
AH312
3
6
7
Z = 50
L = 5
RF OUT
3.3 pF (2)
C9
Z = 50
100 pF
C3
18 nH
1000 pF
C5
1
20
R1
0
R4
8
L1
R2
22
VREF
VCC
10 pF
C6
1000 pF
C7
C4
10 uF
Typical Performance
Frequency 1960
MHz
S21 - Gain
11 dB
S11 -12
dB
S22 -10
dB
Output P1dB +33 dBm
Output IP3
+49 dBm
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
April
2003
The Communications Edge
TM
AH312
2 Watt, High Gain HBT Amplifier
Preliminary Product Information
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an "AH312"
designator with a four- or five-digit alphanumeric lot
code on the top surface of the package. Tape and reel
specifications for this part is located on the website in
the "Application Notes" section.
ESD / MSL Information
ESD Classification: Class 1B
Value: Passes
at
1000V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114

MSL Rating:
Level 2
Standard:
JEDEC Standard J-STD-020A






Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135") diameter drill and have a final plated
thru diameter of .25 mm (.010").
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC
board in the region where the board contacts the
heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.

This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
April
2003
The Communications Edge
TM
AH312
2 Watt, High Gain HBT Amplifier
Preliminary Product Information
Typical Device Data

S-Parameters (V
D
= +5 V, I
D
= 800 mA, T = 25
C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-0.86 -178.06 27.55 113.72 -45.75 30.91 -0.38 -130.98
100 -0.64 178.18 22.16 98.81 -45.46 12.80 -0.38 -157.30
200 -0.68 172.85 16.13 89.06 -42.65 6.09 -0.48 -172.51
300 -0.77 168.33 12.84 82.24 -42.87 9.36 -0.41 -178.09
400 -0.76 164.33 10.61 77.31 -43.96 4.69 -0.48 177.51
500 -0.83 160.16 8.90 72.58 -43.96 5.99 -0.52 175.47
600 -0.93 155.56 7.46 67.94 -41.17 6.70 -0.61 173.63
700 -1.00 150.80 6.52 63.48 -41.65 5.77 -0.67 171.65
800 -1.15 146.04 5.78 57.62 -41.65 -5.78 -0.66 170.49
900 -1.36 140.85 5.24 52.43 -41.32 -15.90 -0.76 169.86
1000 -1.50 134.58 4.87 46.90 -40.36 -7.84 -0.71 169.31
1100 -1.83 128.47 4.69 40.14 -40.84 -29.07 -0.79 168.48
1200 -2.39 121.66 4.74 32.96 -40.22 -16.51 -0.80 168.22
1300 -3.13 112.88 4.92 24.06 -39.22 -26.86 -0.72 168.91
1400 -4.47 104.01 5.33 14.01 -38.97 -48.82 -0.76 167.91
1500 -6.80 89.44 5.78 0.40 -38.05 -63.59 -0.81 170.99
1600 -11.96 86.06 5.96 -17.55 -38.96 -86.32 -0.60 170.63
1700 -17.27 155.02 5.51 -36.29 -37.45 -117.58 -0.55 168.54
1800 -8.66 -179.11 4.41 -56.78 -39.35 -144.53 -0.52 167.41
1900 -4.77 171.18 2.70 -74.04 -40.75 -179.69 -0.52 166.26
2000 -2.76 159.91 0.53 -89.86 -43.55 145.94 -0.41 164.50
2100 -1.77 150.36 -1.59 -100.76 -41.51 125.36 -0.46 162.43
2200 -1.21 142.90 -3.21 -107.99 -41.56 104.25 -0.54 160.11
2300 -0.90 136.33 -5.51 -117.09 -41.82 89.18 -0.70 159.22
2400 -0.68 130.93 -7.27 -123.14 -42.46 73.64 -0.68 157.84
2500 -0.55 126.46 -8.99 -128.85 -39.74 71.79 -0.63 156.29
2600 -0.43 121.91 -10.41 -134.93 -39.71 64.28 -0.73 154.66
2700 -0.39 118.06 -12.11 -138.26 -41.60 58.20 -0.67 153.37
2800 -0.32 114.61 -13.28 -143.22 -40.99 58.20 -0.73 151.14
2900 -0.28 111.40 -15.19 -146.48 -39.43 54.78 -0.74 149.16
3000 -0.29 108.16 -15.94 -149.93 -39.65 48.40 -0.79 147.52


Thermal Information
Parameters
Rating
Operating Case Temperature
-40 to +85
C
Storage Temperature
-55 to +150
C
Thermal Resistance
17.5
C/W
.
To ensure MTTF > 1x10e6 hrs.
The thermal impedance of this device is a function of the Voltage applied
at pins 6 and 7 and the Current applied to pins 6,7, and 8. To calculate
junction temperature, use the following formula:

Tj = Tcase + Thetajc*(Vpin6,7*(Ipin6,7+Ipin8))
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