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Datasheet: B160N (Weitron Technology)

Surface Mount Schottky Barrier Diodes

 

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Weitron Technology
Surface Mount Schottky Barrier Diodes
* Surface Mounted Applications
* Metal-Semiconductor Junction with Guardring
* Epitaxial Construction
* Low Leakage Current
* High Current Capability
* Plastic Material Has UL Flammability Classification 94V-0
* For Use in, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
* Case : Molded Plastic, SOD-323F(0805)
* Terminals : Solder Plated, Solderable per ML-STD-750 Medthod 2026
* Polarity :Indicated By Cathode Band
* Shipped in 8mm Tape, 3000 Pcs per 7 Inch Reel
Features:
B120N/B140N
Mechanical Data
REVERSE VOLTAGE
20-60Volts
FORWARD CURRENT
1.0 Ampere
SOD-323F Outline Dimension
unit:mm
A
C
B
E
H
J
H
2.30
2.70
1.15
1.35
-
0.30
(TYP)
E
1.80
2.20
H
-
0.90
(TYP)
J
0.90
1.10
A
B
C
SOD-323F
Dim
Min
Max
WEITRON
http://www.weitron.com.tw
(0805)
SOD-323F
B160N
* Weight: 0.0085 grams
B120N/B140N
B160N
Maximum Ratings and Electrical Characteristics
Device Marking
Characteristics
Symbol
Unit
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous
Maximum DC Reverse Current @T
A
=25 C
At Rated DC Blocking Voltage @T
A
=125 C
Typical Junction Capacitance (1)
Typical Thermal Resistance (2)
Operating Temperature Range
Storage Temperature Range
V
V
V
A
A
V
mA
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
@ T
A
=25 C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
q
JC
T
J
T
STG
40
28
40
20
14
20
60
42
60
1.0
(FIG1)
30
0.70
0.55
0.5
10
120(TYP)
90(TYP)
-55 to+125
-55 to+150
P
F
NOTES:
1. Measured at 1.0MHz applied reverse voltage of 4.0V DC.
2. Thermal Resistance Junction to case.
F
WEITRON
http://www.weitron.com.tw
B120N
B140N B160N
B120N=12 B140N=14 B160N=16
C/W
C
C
WEITRON
http://www.weitron.com.tw
B120N/B140N
B160N
0.1
1.0
.01
10
50
FIG.1 Typical Forward Current Derating Curve
A
V
E
R
A
G
E

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,
(
A
)
REVERSE VOLTAGE,(V)
J
U
N
C
T
I
O
N

C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
I
N
S
T
A
N
T
A
N
E
O
U
S

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,
(
A
)
FORWARD VOLT AGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
350
300
250
200
150
100
50
0
.01 .05 .1 .5 1 5 10 50 100
.1 .3 .5 .7 .9 1.1 1.3 1.5
3.0
.1
1.0
10
100
R
E
V
E
R
S
E

L
E
A
K
A
G
E

C
U
R
R
E
N
T
,

(
m
A
)
0 20 40 60 80 100 120 140
.01
Tj=75 C
Tj=25 C
Tj=25 C
AMBIENT TEMPERATURE,( C)
0
0
20
40
60
80
100
120
140
160
180
200
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
0
12
6
18
30
24
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
P
E
A
K

F
O
R
W
A
R
D

S
U
R
G
E

C
U
R
R
E
N
T
,
(
A
)
B1
20
N-B
14
0N
B1
20
N-
B1
40
N
B1
60
N
B1
60
N
FIG.2 Typical Forward Characteristics
FIG.3 Maximum Non-Repetitive Forward
Surge Current
FIG.4 Typical Junction Capacitance
FIG.5 Typcial Reverse Characteristics
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