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Datasheet: EDI2GG464128V-D (White Electronic Designs Corporation)

Organization = 4x128Kx64 ; Speed (ns) = 10-12 ; Volt = 3.3 ; Package = 120 Ce-dimm ; Temp = C ;

 

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White Electronic Designs Corporation
EDI2GG464128V
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
The EDI2GG464128VxxD is a Synchronous SRAM, 60 position
Card Edge DIMM (120 contacts) Module, organized as 4x128Kx64.
The Module contains eight (8) Synchronous Burst Ram Devices,
packaged in the industry standard JEDEC 14mmx20mm TQFP
placed on a Multilayer FR4 Substrate. The module architecture is
defined as a Synchronous Only, Flow-Through, Early Write De-
vice. This module provides High Performance, Ultra Fast access
times at a cost per bit benefit over BiCMOS Asynchronous SRAM
based devices. As well as improved cost per bit, the use of
Synchronous or Synchronous Burst devices or modules can ease
the memory subsystem design by reducing or easing the memory
controller requirement.
Synchronous operations are in relation to an externally supplied
clock, Registered Address, Registered Global Write, Registered
Enables as well as an Asynchronous Output enable. All read and
write operations to this module are performed on Quad Words (64
bit operations).
Write cycles are internally self timed and are initiated by a rising
clock edge. This feature relieves the designer the task of devel-
oping external write pulse width circuitry.
FEATURES
s 4x128Kx64 Synchronous
s Access Speed(s): T
KHQV
= 9.5, 10, 11, 12, 15ns
s Flow-Through Architecture
s Clock Controlled Registered Bank Enables (E1\, E2\, E3, E4\)
s Clock Controlled Registered Address
s Clock Controlled Registered Global Write (GW\)
s Aysnchronous Output Enable (G\)
s Internally self-timed Write
s Gold Lead Finish
s 3.3V
10%, -5% Operation
s Common Data I/O
s High Capacitance (30pF) drive, at rated Access Speed
s Single total array Clock
s Multiple Vcc and Vss
4x128Kx64 Synchronous SRAM CARD EDGE DIMM, 3.3V
November 1998 Rev. 0
ECO# 10855
EDI2GG464128V
2
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
V
SS
A
0
A
1
A
2
A
3
V
CC
A
4
A
5
A
6
A
7
V
SS
A
8
V
SS
CLK
V
SS
E
4
\
V
CC
E
3
\
G\
V
SS
DQ
0
DQ
1
DQ
2
DQ
3
V
CC
DQ
8
V
SS
A
16
A
15
A
14
A
13
V
CC
A
12
A
11
A
10
A
9
V
SS
RFU
V
SS
NC
V
SS
E
2
\
V
CC
E
1
\
GW\
V
SS
DQ
7
DQ
6
DQ
5
DQ
4
V
CC
DQ
15
DQ
9
DQ
10
DQ
11
V
SS
DQ
16
DQ
17
DQ
18
DQ
19
V
CC
DQ
24
DQ
25
DQ
26
DQ
27
V
SS
DQ
32
DQ
33
DQ
34
DQ
35
V
CC
DQ
40
DQ
41
DQ
42
DQ
43
V
SS
DQ
48
DQ
49
DQ
50
DQ
51
V
CC
DQ
56
DQ
57
DQ
58
DQ
59
V
SS
DQ
14
DQ
13
DQ
12
V
SS
DQ
23
DQ
22
DQ
21
DQ
20
V
CC
DQ
31
DQ
30
DQ
29
DQ
28
V
SS
DQ
39
DQ
38
DQ
34
DQ
37
V
CC
DQ
47
DQ
46
DQ
45
DQ
44
V
SS
DQ
55
DQ
54
DQ
53
DQ
52
V
CC
DQ
63
DQ
62
DQ
61
DQ
60
V
SS
11
13
15
17
19
21
23
25
27
28
26
24
22
20
18
16
14
12
10
29
31
33
35
37
39
41
43
45
47
49
51
52
50
48
46
44
42
40
38
36
34
30
32
53
55
57
59
61
63
65
67
69
71
73
54
56
58
60
62
64
66
68
70
72
74
75
77
79
81
83
85
87
89
91
93
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
95
97
99
101
103
105
107
109
111
113
115
117
119
118
120
3
5
7
9
1
8
6
4
2
PIN CONFIGURATION
EDI2GG464128V
3
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
G\
GW\
E
1
\
GW\
G\
E\
DQ
GW\
G\
E\
DQ
GW\
G\
E\
DQ
GW\
G\
E\
DQ
E
3
\
GW\
G\
E\
DQ
GW\
G\
E\
DQ
GW\
G\
E\
DQ
GW\
G\
E\
DQ
E
2
\
E
4
\
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
A
0-16
128Kx64
128Kx64
128Kx64
128Kx64
128Kx64
128Kx64
128Kx64
128Kx64
DQ
0-63
FUNCTIONAL BLOCK DIAGRAM
DQ
0-63
Input/Output Bus
A
0-15
Address Bus
E
1
-
4
\
Synchronous Bank Enables
CLK
Array Clock
GW\
Synchronous Global Write
Enable
G\
Asynchronous Output Enable
Vcc
3.3V Power Supply
Vss
Ground
NC
No Connect
PIN NAMES
PIN DESCRIPTIONS
DIMM Pins
Symbol
Type
Description
3, 5, 7, 9, 13, 15,
A
0-15
Input
Addresses: These inputs are registered and must meet the setup and hold times around the rising edge of CLK.
17, 19, 20, 23, 18,
Synchronous
The burst counter generates internal addresses associated with A
0
and A
1
, during burst and wait cycle.
16, 14, 10, 8, 6
38
GW\
Input
Global Write: This active LOW input allows a full 72-bit WRITE to occur independent of the BWE\ and BWx\ lines
Synchronous
and must meet the setup and hold times around the rising edge of CLK.
27
CLK
Input
Clock: This signal registers the addresses, data, chip enables, write control and burst control inputs on its rising
Synchronous
edge. All synchronous inputs must meet setup and hold times around the clock's rising edge.
36, 32
E1, E2\
Input
Bank Enables: These active LOW inputs are used to enable each individual bank and to gate ADSP\.
35, 31
E3\, E4\
Synchronous
37
G\
Input
Output Enable: This active LOW asynchronous input enables the data output drivers.
Various
DQ
0-63
Input/Output
Data Inputs/Outputs: First byte is DQ
0-7
, second byte is DQ
8-15
, third byte is DQ
16-23
, fourth byte is DQ
24-31
, fifth
byte is DQ
32-39
, sixth byte is DQ
40-47
, seventh byte is DQ
48-55
and the eight byte is DQ
56-64
.
Various
Vcc
Supply
Core power supply: +3.3V -5%/+10%
Various
Vss
Ground
Ground
EDI2GG464128V
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
DC ELECTRICAL CHARACTERISTICS - READ CYCLE
RECOMMENDED DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS*
SYNCHRONOUS ONLY - TRUTH TABLE
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in operational sections of this
specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin
-0.5V to Vcc +0.5V
Storage Temperature
-55
C to +125
C
Operating Temperature (Commercial)
0
C to +70
C
Operating Temperature (Industrial)
-40
C to +85
C
Short Circuit Output Current
20 mA
Operation
E1\
E2\
E3\
E4\
GW\
G\
CLK
DQ
Synchronous Write-Bank 1
L
H
H
H
L
H
High-Z
Synchronous Read-Bank 1
L
H
H
H
H
L
Synchronous Write-Bank 2
H
L
H
H
L
H
High-Z
Synchronous Read-Bank 2
H
L
H
H
H
L
Synchronous Write-Bank 3
H
H
L
H
L
H
High-Z
Synchronous Read-Bank 3
H
H
L
H
H
L
Synchronous Write-Bank 4
H
H
H
L
L
H
High-Z
Synchronous Read-Bank 4
H
H
H
L
H
L
Snooze Mode
X
X
X
X
X
X
X
High-Z
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
V
CC
3.14
3.3
3.6
V
Supply Voltage
V
SS
0.0
0.0
0.0
V
Input High
V
IH
2.2
3.0
V
CC
+0.3
V
Input Low
V
IL
-0.3
0.0
0.8
V
Input Leakage
IL
I
-2
1
2
A
Output Leakage
ILo
-2
1
2
A
Output High (I
OH
= -4mA)
V
OH
2.4
-
-
V
Output Low (I
OL
= 8mA)
V
OL
-
-
0.4
V
Max
Description
Symbol
Typ
9.5
10
11
12
15
Units
Power Supply Current
Icc
1
1.55
2.8
2.2
2.2
2.7
2.0
A
Power Supply Current
Icc
0.75
1.8
1.5
1.3
1.3
1.0
A
Device Selected,No Operation
Snooze Mode
Icc
ZZ
200
300
300
300
300
300
mA
CMOS Standby
Icc
3
400
500
500
500
500
500
mA
Clock Running-Deselect
Icc
K
600
900
900
900
900
900
mA
*TBD
AC TEST CIRCUIT
AC TEST CONDITIONS
50
Vt = 1.5V
Output
Z0 = 50
Z0 = 50
Parameter
I/O
Unit
Input Pulse Levels
V
SS
to 3.0
V
Input and Output Timing Levels
1.25
V
Output Test Equivalencies
See figure, at left
AC Output Load Equivalent
1.25V
EDI2GG464128V
5
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
READ CYCLE TIMING PARAMETERS
*TBD
9.5ns
10ns
11ns
12ns
15ns
Description
Sym
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Clock Cycle Time
t
KHKH
*
*
12
12
15
20
ns
Clock High Time
t
KHKL
*
*
5
5
5
6
ns
Clock Low Time
t
KLKH
*
*
5
5
5
6
ns
Clock to Output Valid
t
KHQV
*
*
10
11
12
15
ns
Clock to Output Invalid
t
KHQX1
*
*
3
3
3
3
ns
Clock to Output Low-Z
t
KHQX
*
*
2
2
2
2
ns
Output Enable to Output Valid
t
GLQV
*
*
4
5
5
6
ns
Output Enable to Output Low-Z
t
GLQX
*
*
0
0
0
0
ns
Output Enable to Output High-Z
t
GHQZ
*
*
4
5
5
5
ns
Address Setup
t
AVKH
*
*
2.5
2.5
2.5
2.5
ns
Bank Enable Setup
t
EVKH
*
*
2.5
2.5
2.5
2.5
ns
Address Hold
t
KHAX
*
*
1.0
1.0
1.0
1.0
ns
Bank Enable Hold
t
KHEX
*
*
1.0
1.0
1.0
1.0
ns
WRITE CYCLE TIMING PARAMETERS
9.5ns
10ns
11ns
12ns
15ns
Description
Sym
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
Clock Cycle Time
t
KHKH
*
*
12
12
15
20
ns
Clock High Time
t
KHKL
*
*
5
5
5
6
ns
Clock Low Time
t
KLKH
*
*
5
5
5
6
ns
Address Setup
t
AVKH
*
*
2.5
2.5
2.5
2.5
ns
Address Hold
t
KHAX
*
*
1.0
1.0
1.0
1.0
ns
Bank Enable Setup
t
EVKH
*
*
2.5
2.5
2.5
2.5
ns
Bank Enable Hold
t
KHEX
*
*
1.0
1.0
1.0
1.0
ns
Global Write Enable Setup
t
WVKH
*
*
2.5
2.5
2.5
2.5
ns
Global Write Enable Hold
t
KHWX
*
*
1.0
1.0
1.0
1.0
ns
Data Setup
t
DVKH
*
*
2.5
2.5
2.5
2.5
ns
Data Hold
t
KHDX
*
*
1.0
1.0
1.0
1.0
ns
*TBD
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