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Datasheet: F1T5 (Taiwan Semiconductor Company, Ltd)

1.0 AMP. Fast Recovery Rectifiers

 

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Taiwan Semiconductor Company, Ltd

Document Outline

- 392 -
F1T1 THRU F1T7
1.0 AMP. Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Low forward voltage drop
High current capability
High
reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
/10 seconds/.375",(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 0.20 gram
TS-1















Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
F1T1 F1T2 F1T3 F1T4 F1T5 F1T6 F1T7
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800 1000
V
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800 1000
V
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length @T
A
= 55
I
(AV)
1.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I
FSM
30 A
Maximum Instantaneous Forward Voltage
@ 1.0A
V
F
1.2 V
Maximum DC Reverse Current @ T
A
=25
at Rated DC Blocking Voltage @ T
A
=100
I
R
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr 150
250
500 nS
Typical Junction Capacitance ( Note 2 )
Cj 10 pF
Typical Thermal Resistance ( Note 3 )
R
JA
100
O
C/W
Operating Temperature Range
T
J
-65
to
+150
Storage Temperature Range
T
STG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
- 393 -
RATINGS AND CHARACTERISTIC CURVES (F1T1 THRU F1T7)
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK
FOR
W
ARD
SURGE
CURRENT
.
(A)
1
2
4
6
8 10
20
100
40
60 80
20
10
0
40
50
30
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
FIG.3- TYPICAL FORWARD CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
.
(A)
1.6
1.8
0.4
0.6
0.8
1.0
1.2
1.4
0.03
0.1
0.3
1
10
20
3
0.01
FORWARD VOLTAGE. (V)
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
o
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION
CAP
ACIT
ANCE.(pF)
1
2
4
6
10
100
60
40
20
10
1
30
50
90
REVERSE VOLTAGE. (V)
Tj=25 C
0
FIG.1- MAXIMUM TYPICAL FORWARD CURRENT
DERATING CURVE
A
VERAGE
FOR
W
ARD
CURRENT
.
(A)
25
0
50
75
100
125
150
175
0.5
0
0.25
0.75
1.0
AMBIENT TEMPERATURE. ( C)
o
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
20
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