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Datasheet: F1T2G (Taiwan Semiconductor Company, Ltd)

1.0 Amp. Glass Passivated Fast Recovery Rectifiers

 

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Taiwan Semiconductor Company, Ltd
- 378 -
F1T1G THRU F1T7G
1.0 AMP. Glass Passivated Fast Recovery Rectifiers

Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
/10 seconds/.375",(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Mounting position: Any
Weight: 0.20 gram
TS-1














Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
F1T
1G
F1T
2G
F1T
3G
F1T
4G
F1T
5G
F1T
6G
F1T
7G
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100 200 400 600 800
1000 V
Maximum RMS Voltage
V
RMS
35
70 140 280 420 560
700
V
Maximum DC Blocking Voltage
V
DC
50
100 200 400 600 800
1000 V
Maximum Average Forward Rectified
Current .375"(9.5mm) Lead Length
@T
A
= 55
I
(AV)
1.0 A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
I
FSM
30 A
Maximum Instantaneous Forward Voltage
@ 1.0A
V
F
1.3 V
Maximum DC Reverse Current @ T
A
=25
at Rated DC Blocking Voltage @ T
A
=125
I
R
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr 150
250
500
nS
Typical Junction Capacitance ( Note 2 )
Cj
15 pF
Typical Thermal Resistance ( Note 3 )
R
JA
90
O
C/W
Operating Temperature Range
T
J
-65 to +150
Storage Temperature Range
T
STG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
- 379 -
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (F1T1G THRU F1T7G)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
.
(A)
1.6
.4
.6
.8
1.0
1.2
1.4
0.1
1.0
10
.01
FORWARD VOLTAGE. (V)
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
o
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION
CAP
ACIT
ANCE.(pF)
1
10
100
10
1
100
REVERSE VOLTAGE. (V)
Tj=25 C
0
PEAK
FOR
W
ARD
SURGE
CURRENT
.
(A)
1
2
4
6
8 10
20
100
40
60 80
20
10
0
40
50
30
NUMBER OF CYCLES AT 60Hz
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
Tj=25 C
0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
A
VERAGE
FOR
W
ARD
CURRENT
.
(A)
25
0
50
75
100
125
150
175
0
0.25
0.50
0.75
1.00
1.25
1.50
AMBIENT TEMPERATURE. ( C)
o
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
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