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Datasheet: 0.25.mmW.3MI (TriQuint Semiconductor)

0.25-µm MMW Phemt 3mi

 

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TriQuint Semiconductor
0.25-m mmW pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 1 of 6; 9/24/02
Specifications are subject to change.
Features
0.25-m amplifier transistors
0.25-m switch transistors
0.25-m, 2-m and 4-m diodes
High-Q passives
3 MIM capacitance densities
TaN resistors
GaAs resistors
High-density interconnects
3 metal layers
Air bridges
Substrate vias
Protective overcoat
Operation up to V
d
= 7 V
Applications
Up to 50 GHz
Communications
Military
Power amplifiers
Driver amplifiers
Low-noise amplifiers
AGC amplifiers
Limiting amplifiers
Transimpedance amplifiers
Differential amplifiers
Digital and analog phase shifters
Digital and analog attenuators
Mixers (up and down converters)
Point-to-point radio
Point-to-multipoint radio
Switches
Oscillators
Multipliers
General Description
The 0.25-m mmW pHEMT 3MI (3-Metal-Interconnect)
process combines high power density and gain per stage
performance. The process is optimized for high-power and
low-noise operation through 50 GHz. Passives include 3
thick-metal interconnect layers, precision TaN resistors,
GaAs resistors, through-substrate vias and 3 MIM capaci-
tance densities. The via-under-cap process aids in size
compaction and offers excellent grounds at higher frequen-
cies. Air bridges produce minimal interconnect capacitance
and the protective overcoat layer provides environmental
robustness.
PROTECTIVE OVERCOAT
4.0 m METAL 2
2.0 m METAL 1
2000 NITRIDE 2
MIM METAL
500 NITRIDE 1
0.75 m METAL 0
TaN RESISTOR
500 NITRIDE 0
T-GATE
ACTIVE REGION
OHMIC METAL (EXCEPT VIA)
SEMI-INSULATING GaAs SUBSTRATE
VIA UNDER CAP
0.25-m 3MI Process Cross Section
0.25-m mmW pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 2 of 6; 9/24/02
Specifications are subject to change.
0.25-m mmW 3MI pHEMT
DC Characteristics
200-m FET
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0
2
4
6
8
10
12
Vds (V)
Ids (A)
Vgs = 0.7 V
Vgs = 0.3 V
Vgs = 0 V
Vgs = -0.3 V
Vgs = -0.7 V
Vgs = -0.9 V
Element
Parameter
Typical Value
Units
FETs
I
dss
285
mA/mm
I
max
510
mA/mm
G
m
375
mS/mm
V
bd
-17
V
V
p
-1
V
F
t (peak)
55
GHz
MIM capacitors
density
240
pF/mm
2
300
pF/mm
2
1200
pF/mm
2
Capacitors over vias
yes
TaN resistors
sheet resistance
50
V
/sq
GaAs resistors
sheet resistance
160
V
/sq
Vias
yes
Substrate
thickness
100
m
0.25-m mmW pHEMT 3MI Process Details
0.25-m mmW pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 3 of 6; 9/24/02
Specifications are subject to change.
0.25-m mmW pHEMT 3MI
Minimum Noise Figure
200-m FET @ 3 Volts, 15 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
Frequency (GHz)
NFmin (dB)
0.25-m mmW pHEMT 3MI
Maximum Available Gain/Stable Gain (MAG/MSG)
600-m FET @ 6 Volts, 60 mA
0
5
10
15
20
25
0
10
20
30
40
50
Frequency (GHz)
MAG/MSG (dB)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Stability Factor (K)
0.25-m mmW pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
0.25-m mmW pHEMT 3MI
Efficiency Tuned Load
600-m FET @ 6 Volts, 30 GHz
15
20
25
30
10
15
20
25
Pin (dBm)
Pout (dBm)
10
20
30
40
PAE (%)
0.25-m mmW pHEMT 3MI
Power Tuned Load
600-m FET @ 6 Volts, 30 GHz
15
20
25
30
10
15
20
25
Pin (dBm)
Pout (dBm)
10
20
30
40
PAE (%)
0.25-m mmW pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 5 of 6; 9/24/02
Specifications are subject to change.
Gate Pitch (m) Gate Fingers FET Sizes (m)
07 07
4
100, 200 & 300
07 07
8
200, 400 & 600
12 18
4
100, 200 & 300
12 18
8
200, 400 & 600
12 18
10
600
20 20
4
100, 200 & 300
20 20
8
400 & 600
20 20
10
600 & 900
20 20
12
900
26 26
4
300
26 26
8
600
FET Models Available
Application Examples
0.2 to 18 GHz Down Converter TGC1452-EPU:
The TriQuint TGC1452-EPU is a double-balanced MMIC mixer which supports a variety of com-
munication system applications including satellite systems and point-to-point radio.

20 to 40 GHz X2 Frequency Multiplier TGC1430F-EPU:
Input frequencies range from 10 to 20 GHz with 25 dB fundamental isolation. The conversion loss
is 12 2 dB with 18 dBm of input drive power. This multiplier is used primarily for point-to-point
radio and point-to-multipoint communications.

29 to 37 GHz Compact Driver Amplifier TGA4510-EPU:
The greater than 16 dB nominal small-signal gain at 30 GHz and 16 dBm nominal P
sat
are a key
features of this driver amplifier. Applications include LMDS, point-to-point and base stations.
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