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Datasheet: THAT300P (THAT Corp.)

Low-Noise Matched Transistor Array ICs

 

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THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Low-Noise Matched Transistor Array ICs
FEATURES
4 Matched NPN Transistors (300)
4 Matched PNP Transistors (320)
2 Matched NPNs and PNPs (340)
4 Matched NP6N - 4 Matched PNP (380)
Monolithic Construction
Low Noise
- 0 75
.
(
)
nV Hz PNP
- 0 8
.
(
)
nV Hz NPN
High Speed
- f
T
= 350 MHz (NPN)
- f
T
= 325 MHz (PNP)
Excellent Matching 500
mV typical
between devices of same gender
Dielectrically Isolated
36V V
CEO
APPLICATIONS
Microphone Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
Multipliers
Servos
DESCRIPTION
The THAT300 Series ICs are large-geometry
monolithic NPN and/or PNP transistor arrays which
combine low noise, high speed and excellent para-
metric matching between devices of the same gender.
The large geometries typically result in 25
W base
spreading resistance for the PNP devices (30
W for
the NPNs), producing 0 75
.
nV Hz voltage noise
( .
0 8
nV
Hz for the NPNs). This makes the 300
Series an ideal choice for low-noise amplifier input
stages.
Fabricated on a Complementary Bipolar Dielec-
trically Isolated process, each transistor is electri-
cally isolated from the others by a layer of insulating
oxide. The resulting low collector-to-substrate capac-
itance produces a typical NPN f
T
of 350 MHz,
325 MHz for the PNPs. This delivers ac performance
similar to discrete 2N3904- and 2N3906-class de-
vices. Dielectric isolation also minimizes crosstalk
and provides complete DC isolation.
Substrate biasing is not required for normal op-
eration, though the substrate should be grounded to
optimize speed and minimize inter-device crosstalk.
The monolithic construction assures excellent pa-
rameter matching and tracking over temperature.
T H A T
C o r p o r a t i o n
THAT 300 Series
Part Number
Configuration
Package
THAT300P
4-Matched NPN Transistors
DIP14
THAT300S
SO14
THAT320P
4- Matched PNP Transistors
DIP14
THAT320S
SO14
THAT340P
2 Matched NPN Transistors and
2 Matched PNP Transistors
DIP14
THAT340S
SO14
THAT380G
4 Matched NPN Transistors and
4 Matched PNP Transistors
Individual Die
Table 1. Ordering Info
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Page 2
THAT300 Series Transistor Arrays
SPECIFICATIONS
1
Maximum Ratings (T
A
= 25C)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
NPN Collector-Emitter Voltage
BV
CEO
I
C
= 1 mAdc, I
B
= 0
36
40
--
V
NPN Collector-Base Voltage
BV
CBO
I
C
=10
mAdc, I
E
=0
36
40
--
V
NPN Emitter-Base Voltage
BV
EBO
I
E
= 100
mAdc, I
C
= 0
5
--
--
V
NPN Collector Current
I
C MAX
10
20
mA
NPN Emitter Current
I
E MAX
10
20
mA
PNP Collector-Emitter Voltage
BV
CEO
I
C
= 1 mAdc, I
B
= 0
36
40
--
V
PNP Collector-Base Voltage
BV
CBO
I
C
= 10
mAdc, I
E
= 0
36
40
--
V
PNP Emitter-Base Voltage
BV
EBO
I
E
= 100
mAdc, I
C
= 0
5
--
--
V
PNP Collector Current
I
C MAX
10
20
mA
PNP Emitter Current
I
E MAX
10
20
mA
Collector-Collector Voltage
BV
CC
100
200
--
V
Emitter-Emitter Voltage
BV
EE
100
200
--
V
Operating Temperature Range
T
A
0
70
C
Maximum Junction Temperature
T
JMAX
150
C
Storage Temperature
T
STORE
-45
125
C
13
12
Q2
1
2
3
Q1
4
5
6
7
Q3
SUB
11
10
9
8
Q4
SUB
14
THAT 300
Fig 1. 300 Pinout
13
12
Q2
11
10
9
8
Q4
SUB
1
2
3
4
5
6
7
Q1
Q3
SUB
14
THAT 320
Fig 2. 320 Pinout
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
600041 Rev B
Page 3
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A
=25C.
SPECIFICATIONS
1
(Cont'd)
NPN Electrical Characteristics
2
Parameter
Symbol
Conditions
Min
Typ
Max
Units
NPN Current Gain
h
fe
V
CB
= 10 V
I
C
= 1 mA
60
100
--
I
C
= 10
mA
100
--
NPN Current Gain Matching
Dh
fe
V
CB
= 10 V, I
C
= 1 mA
--
5
--
%
NPN Noise Voltage Density
e
N
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
--
0.8
--
nV Hz
NPN Gain-Bandwidth Product
f
T
I
C
= 1 mA, V
CB
= 10 V
350
MHz
NPN
DV
BE
(THAT300: V
BE1
-V
BE2 ;
V
BE3
-V
BE4
) (THAT340: V
BE1
-V
BE2
)
V
OS
I
C
= 1 mA
--
0.5
3
mV
I
C
= 10
mA
--
0.5
mV
NPN
DI
B
(THAT300: I
B1
-I
B2,
I
B3
-I
B4
) (THAT340: I
B1
-V
B2
)
I
OS
I
C
= 1 mA
--
500
1500
nA
I
C
= 10
mA
--
5
nA
NPN Collector-Base Leakage Current I
CBO
V
CB
= 25 V
--
25
--
pA
NPN Bulk Resistance
r
BE
V
CB
= 0 V, 10
mA < I
C
< 10 mA
--
2
--
W
NPN Base Spreading Resistance
r
bb
V
CB
= 10 V, I
C
= 1 mA
--
30
--
W
NPN Collector Saturation Voltage
V
CE(SAT)
I
C
= 1 mA, I
B
= 100
mA
--
0.05
V
NPN Output Capacitance
C
OB
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
3
pF
NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)
C
CC
V
CC
= 0 V, 100 kHz
0.7
pF
13
12
Q2
11
10
9
8
Q4
SUB
1
2
3
4
5
6
7
Q1
Q3
SUB
14
THAT 340
Fig 3. 340 Pinout
GKH YK
THAT
312
17C1
18B
Q1
E
Q1
B
Q1
C
Q3
C
Q3
B
Q3
E
Q5
E
Q5
B
Q5
C
Q7
E
Q7
B
Q7
C
Q2
C
Q2
B
Q2
E
Q8
C
Q8
B
Q8
E
Q4
B
Q4
E
Q6
E
Q6
B
Q4
C
Q6
C
Q1
PNP
Q2
PNP
Q3
NPN
Q4
NPN
Q7
PNP
Q8
PNP
Q5
NPN
Q6
NPN
Fig 4. 380 Die layout
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
Page 4
THAT300 Series Transistor Arrays
SPECIFICATIONS
1
(Cont'd)
PNP Electrical Characteristics
2
Parameter
Symbol
Conditions
Min
Typ
Max
Units
PNP Current Gain
h
fe
V
CB
= 10 V
I
C
= 1 mA
50
75
--
I
C
= 10
mA
75
--
PNP Current Gain Matching
Dh
fe
V
CB
= 10 V, I
C
= 1 mA
--
5
--
%
PNP Noise Voltage Density
e
N
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
--
0.75
--
nV Hz
PNP Gain-Bandwidth Product
f
T
I
C
= 1 mA, V
CB
= 10 V
325
MHz
PNP
DV
BE
(THAT320: V
BE1
-V
BE2;
V
BE3
-V
BE4
) (THAT340: V
BE3
-V
BE4
)
V
OS
I
C
= 1 mA
--
0.5
3
mV
I
C
= 10
mA
--
0.5
mV
PNP
DI
B
(THAT320: I
B1
-I
B2;
I
B3
-I
B4
) (THAT340: I
B3
-I
B4
)
I
OS
I
C
= 1 mA
--
700
1800
nA
I
C
= 10
mA
--
7
nA
PNP Collector-Base
Leakage Current
I
CBO
V
CB
= 25 V
--
25
--
pA
PNP Bulk Resistance
r
BE
V
CB
= 0 V, 10
mA < I
C
< 10 mA
--
2
--
W
PNP Base Spreading Resistance
r
bb
V
CB
= 10 V, I
C
= 1 mA
--
25
--
W
PNP Collector Saturation Voltage
V
CE(SAT)
I
C
= 1 mA, I
B
= 100
mA
--
0.05
V
PNP Output Capacitance
C
OB
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
3
pF
PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)
C
CC
V
CC
= 0 V, 100 kHz
0.6
pF
Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-
sumed by THAT Corporation for it's use nor for any infringements of patents or other rights of third parties which may
result from it's use.
LIFE SUPPORT POLICY
THAT Corporation products are not designed for use in life support equipment where malfunction of such products
can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer's own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.
CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.
It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-
ages can accumulate and discharge without detection causing a loss of function or performance to occur.
The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-
sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.
Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-
tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.
THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
600041 Rev B
Page 5
GKH
YK
THA
T
312
17C1 18B
1232u
1613u
0
95.5
286.5
477.5
668.5
0
95.5
286.5
41
1.5
477.5
-95.5
-286.5
-477.5
-668.5
-95.5
-286.5
-41
1
.5
-477.5
90u
90u
Figure 7. Die dimensions
0.7500.004
(19.050.10)
0.25.004
(6.350.10)
0.30 0.02
(7.62 0.5)
0.060
(1.52)
0.075
(1.91)
0.10 Typ.
(2.54)
0.018
(0.46)
0.1250.004
(3.180.10)
Typ.
1
0.010
(0.25)
Note:
JA = 100 C / W
q
Figure 5. Dual-In-Line Package Outline
0.050
(1.27)
Typ
0.245
(6.2)
Max
0.157
(3.99)
Max
0.018 (0.46)
Max
0.344 (8.74)
Max
0.069
(1.75)
Max
0.010
(0.25)
Max
1
Note:
JA = 100 C / W
q
Figure 6. Surface-Mount Package Outline
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