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Datasheet: B1201UA (Teccor Electronics)

Teccor® Battrax Dual Negative Slic Protector, Package= MS-013 6-pin SM Dip

 

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Teccor Electronics
Battrax Dual Negative SLIC Protector
http://www.teccor.com
2 - 62
2003 Teccor Electronics
+1 972-580-7777
SIDACtor
Data Book and Design Guide
Battrax Dual Negative SLIC Protector
This solid state Battrax protection device is referenced to a negative voltage source. Its
dual-chip package also includes internal diodes for transient protection from positive
surge events.
For a diagram of a Battrax application, see Figure 3.42.
* For individual "UA" and "UC" surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 C. I
PP
applies to -40 C through +85 C temperature range.
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
I
PP
ratings assume a V
REF
= -48 V.
V
DRM
is measured at I
DRM.
V
S
is measured at 100 V/s.
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. "UC" product is approximately 2x the listed value.
V
REF
maximum value for the B1101, B1161, and/or B1201 is -200 V.
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
T
Volts
V
F
Volts
I
DRM
Amps
I
GT
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
B1101U_
|-V
REF
| + |-1.2V|
|-V
REF
| + |-10V|
4
5
5
100
2.2
100
50
B1161U_
|-V
REF
| + |-1.2V|
|-V
REF
| + |-10V|
4
5
5
100
2.2
160
50
B1201U_
|-V
REF
| + |-1.2V|
|-V
REF
| + |-10V|
4
5
5
100
2.2
200
50
Surge Ratings
Series
I
PP
2x10 s
Amps
I
PP
8x20 s
Amps
I
PP
10x160 s
Amps
I
PP
10x560 s
Amps
I
PP
10x1000 s
Amps
I
TSM
60 Hz
Amps
di/dt
Amps/s
A
150
150
90
50
45
20
500
C
500
400
200
120
100
50
500
1
3
2
5
(T)
(-V
REF
)
(R)
(G)
Battrax Dual Negative SLIC Protector
2003 Teccor Electronics
2 - 63
http://www.teccor.com
SIDACtor
Data Book and Design Guide
+1 972-580-7777
D
a
ta
S
h
e
e
ts
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
Modified MS-013
T
J
Operating Junction Temperature Range
-40 to +125
C
T
S
Storage Temperature Range
-65 to +150
C
R
JA
Thermal Resistance: Junction to Ambient
60
C/W
1
2
3
6
5
4
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
I
H
I
DRM
V
DRM
V
T
+V
+I
V
S
I
S
I
T
V
F
-V
-I
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t Time (s)
I
PP
P
eak Pulse Current %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Wave-form
-8
-40 -20
0
20 40 60 80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) C
P
ercent of
V
S
Change %
25 C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20
0
20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) C
Ratio of
I
H
I
H
(T
C
= 25 C)
25 C
Normalized DC Holding Current versus Case Temperature
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