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Datasheet: 1530-8 (STMicroelectronics)

Rf & Microwave Transistors Avionics Applications

 

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STMicroelectronics
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 SQ. 2LFL (M1 05 )
hermetically sealed
DESCRIPTION
The SD1530-08 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-08 is pack-
aged in the .250" input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
PIN CONNECTION
BRA ND ING
1530-8
ORDER COD E
SD1530-08
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parame ter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CEO
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
2.6
A
P
DISS
Power Dissipation
87.5
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
C/W
SD1530-08
1. Collector
3. Emitter
2. Base
THERMAL DATA
August 1993
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
40 WATTS (typ.) IFF 1030 - 1090 MHz
.
35 WATTS (min.) DME 1025 - 1150 MHz
.
25 WATTS (typ.) TACAN 960 - 1215 MHz
.
9.0 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test C onditions
Va lue
Unit
Min.
Ty p.
Ma x.
P
OUT
f
=
1025
-
1150 MHz P
IN
=
5.0 W
V
CE
=
50 V
35
--
--
W
P
G
f
=
1025
-
1150 MHz P
IN
=
5.0 W
V
CE
=
50 V
8.5
--
--
dB
c
f
=
1025
-
1150 MHz P
IN
=
5.0 W
V
CE
=
50 V
30
--
--
%
Note:
Pulse W idth
=
10
Sec, Duty Cycle
=
1%
T his device is suitable for use under other pulse wi dth/duty cycle conditi ons.
Please contact the factor y for specific applications assistance.
STATIC
Symbol
Test Condi tions
Value
U nit
Min.
Typ.
Max .
BV
CBO
I
C
=
10 mA
I
E
=
0 mA
65
--
--
V
BV
CES
I
C
=
25 mA
V
BE
=
0 V
65
--
--
V
BV
EBO
I
E
=
1 mA
I
C
=
0 mA
3.5
--
--
V
I
CES
V
CE
=
50 V
I
E
=
0 mA
--
--
5
mA
h
FE
V
CE
=
5 V
I
C
=
500 mA
10
--
200
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
SD1530-08
2/5
IMPEDANCE DATA
TYPICAL INPUT IMPEDAN CE
TYPICAL COLLECTOR LOAD IMPEDAN CE
SD1530-08
3/5
C1, C3 : 0.6 - 4.5pF, Johanson Gigatrim
C2
: 470pF ATC Chip Capacitor
C4
: 1000pF ATC Chip Capacitor
C5
: 1000
F, 63V, Electrolytic Capacitor
L1
: 4.5 Turns #22 AWG Wire
Z1
: 500mm Line
Z2
: .450" Wire Line Length .600"
Z3
: 50
Shunt Line
Z4
: .110" x .490"
Z5
: .250" x .700"
Z6
: .250" x .225"
Z7
: Ground
Z8
: .185" x .360"
Z9
: .180" x .120"
TEST CIRCUIT AND PC BOARD LAYOUT
SD1530-08
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0105 rev. B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SD1530-08
5/5
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