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Datasheet: 1528-8 (STMicroelectronics)

Rf & Microwave Transistors Avionics Applications

 

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STMicroelectronics
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 250 SQ. 2LFL (M105)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
20 WATTS (typ.) IFF 1030 - 1090 MHz
.
15 WATTS (min.) DME 1025 - 1150 MHz
.
15 WATTS (typ.) TACAN 960 - 1215 MHz
.
10 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE
.
20:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1528-08 is a gold metallized, silicon NPN
power transistor. The SD1528-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1528-08 is packaged in the .250" input matched
hermetic stripline flange package resulting in im-
proved broadband performance and a low thermal
resistance.
PIN CONNECTION
BRANDING
1528-8
ORDER CODE
SD1528-08
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CEO
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
1.5
A
P
DISS
Power Dissipation
87.5
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
C/W
SD1528-08
1. Collector
3. Emitter
2. Base
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150MHz P
IN
=
1.5 W
V
CE
=
50 V
15
--
--
W
G
P
f
=
1025 -- 1150MHz P
IN
=
1.5 W
V
CE
=
50 V
10
--
--
dB
c
f
=
1025 -- 1150MHz P
IN
=
1.5 W
V
CE
=
50 V
30
--
--
%
N ote:
Pulse W idth
=
10
Sec, D uty Cycle
=
1%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
25mA
V
BE
=
0V
65
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
2
mA
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
SD1528-08
2/4
TEST CIRCUIT
C1
: 1000
F Electrolytic
C2
: 680pF Chip Capacitor
C3
: 120pF Chip Capacitor
C4
: 0.6 - 4.5pF Johanson Gigatrim
L1
: 6 1/2 Turns, #22 AWG on a #30 Drill Bit
Z
: Printed Transmission Line, Length
=
1.91"
Board
: Er
=
2.5, .034" Thick
All Dimensions are in Inches.
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
SD1528-08
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0105
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1528-08
4/4
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