HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: SLD-68HFBG1D (Silonex Inc.)

Photodiode in Hermetic Package

 

Скачать: PDF   ZIP
 
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68HFBG1
Internal Infrared Rejection Filter
Planar Photodiode
Features
Fast switching time, Low capacitance
High responsivity
Linear response vs irradiance
IR Blocking Filter
Hermetic TO-46 case with flat window
Multiple dark current ranges available
Description
This small area planar,
passivated silicon
photodetector is designed to operate in either
photovoltaic or reverse bias mode. It provides
excellent linearity in output signal versus irradiance
(Ee). Low dark current and low capacitance make it
the ideal detector for fast rise time applications.
Internal blue-green filter blocks infrared radiation.
Absolute Maximum Ratings
Storage Temperature
-20
C to +75
C
Operating Temperature
-20
C to +75
C
Soldering Temperature (1)
260
C
CATHODE
(Common to case)
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25.4 Min.
45
Dimensions in mm. (+/- 0.13)
4.7
0.5
2.5
5.1
0.8
5.3
0.0
0.2
0.4
0.6
0.8
1.0
10
20
30
40
50
60
70
80
90
100
1.0
0.8
0.6
0.4
120
Half Angle = 35
Directional Sensitivity Characteristics
0
20
40
60
80
100
Electrical Characteristics
(T
A
=25
C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units Test Conditions
I
SC
Short Circuit Current
6
10
A
V
R
=0V, Ee=25mW/cm
2
(2)
V
OC
Open Circuit Voltage
0.30
V
Ee=25mw/cm
2
(2)
I
D
Reverse Dark Current:
SLD-68HFBG1A
100
nA
V
R
=100mV, Ee=0
SLD-68HFBG1B
100
nA
V
R
=5V, Ee=0
SLD-68HFBG1C
10
nA
V
R
=5V, Ee=0
SLD-68HFBG1D
1
nA
V
R
=5V, Ee=0
SLD-68HFBG1E
250
pA
V
R
=5V, Ee=0
C
J
Junction Capacitance
40
pF
V
R
=0, Ee=0, f=1MHz
t
R
Rise Time
1.0
s
V
R
=10V, R
L
=1k
(3)
t
F
Fall Time
1.5
s
V
R
=10V, R
L
=1k
(3)
TC
I
Temp. Coef., I
SC
+0.2
%/
C (1)
V
BR
Reverse Breakdown Voltage
50
V
I
R
=100
A
P
Maximum Sensitivity Wavelength
550
nm
R
Sensitivity Spectral Range
400
700
nm
1/2
Acceptance Half Angle
35
deg
(off center-line)
Specifications subject to change without notice
102539 REV 2
Notes: (1) >2 mm from case for <5 sec.
(2) Ee = light source @ 2854
K
(3) Ee = light source @
= 580 nm
© 2018 • ChipFind
Контакты
Главная страница