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Datasheet: SLCD-61N8 (Silonex Inc.)

Solderable Photodiode

 

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SLCD-61N8
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Available in arrays where # indicates number of
elements ( maximum of 8 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency. They are particularly
suited to power conversion applications due to their
low internal impedance and relatively high shunt
impedances, and stability. These devices also
provide a reliable, inexpensive detector for
applications such as light beam sensing and
instrumentation. The electrical characteristics below
are per element. In the multielement arrays the
cathodes are common to a all elements.
Absolute Maximum Ratings
Storage Temperature
-40
C to +125
C
Operating Temperature
-40
C to +125
C
Anode
Cathode
Sensitive Area
(2.7 sq. mm.)
Dimensions in mm. (+/- 0.13)
1.3
3.4
0.4
Also available with leads as part number SLSD-71N8
1.0
0.8
0.6
0.4
100
90
80
70
60
50
40
30
20
10
Half Angle = 60
Directional Sensitivity Characteristics
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0

Electrical Characteristics
(T
A
=25
C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
I
SC
Short Circuit Current
100
170
A
V
R
=0V, Ee=25mW/cm
2
(1)
V
OC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
I
D
Reverse Dark Current
1.7
A
V
R
=5V, Ee=0
C
J
Junction Capacitance
100
pF
V
R
=0V, Ee=0, f=1MHz
S
Spectral Sensitivity
0.55
A/W
=940nm
V
BR
Reverse Breakdown Voltage
20
V
I
R
=100
A
P
Maximum Sensitivity Wavelength
930
nm
R
Sensitivity Spectral Range
400
1100
nm
1/2
Acceptance Half Angle
60
deg
Specifications subject to change without notice
104118 REV 0


Notes: (1) Ee = light source @ 2854
K
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