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Datasheet: F05B23VR (Shindengen Electric Mfg)

Vr Series Power Mosfet(230v 0.5a)

 

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Shindengen Electric Mfg
SHINDENGEN
F05B23VR
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
230V 0.5A
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
Case : B-pack
VR Series Power MOSFET
N-Channel Enhancement type
DC/DC converters
Power supplies of DC 12-24V input
Product related to
Integrated Service Digital Network
APPLICATION
Applicable to 4V drive.
The static Rds(on) is small.
Built-in ZD for Gate Protection.
FEATURES
Absolute Maximum Ratings Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
230
V
Gate-Source Voltage
V
GSS
20
Continuous Drain CurrentDC
I
D
0.5
Continuous Drain CurrentPeak)
I
DP
1
A
Continuous Source CurrentDC
I
S
0.5
P
T
On alumina substrate, 50.8mm
, substrate thickness 0.64t, Ta = 25
1.5
W
Total Power Dissipation
3.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
F05B23VR
VR Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 250A, V
GS
= 0V
230
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 230V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 0.5A, V
DS
= 10V
0.2
0.4
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 0.5A, V
GS
= 10V
5.5
8
Gate Threshold Voltage
V
TH
I
D
= 0.2mA, V
DS
= 10V
2
3
4
V
Source-Drain Diode Forward Voltage
V
SD
I
S
= 0.5A, V
GS
= 0V
1.5
Thermal Resistance
ja
junction to ambient, on alumina substrate
83.3 /
jc
junction to case
35.7
Total Gate Charge
Qg
V
GS
= 10V, I
D
= 0.5A, V
DD
= 200V
2.7
nC
Input Capacitance
C
iss
45
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
4.5
pF
Output Capacitance
C
oss
30
Turn-On Time
t
on
I
D
= 0.5A, V
GS
= 10V, R
L
= 200
30
60
ns
Turn-Off Time
t
off
50
100
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
F05B23VR
Transfer Characteristics
V
DS
= 10V
pulse test
TYP
Ta =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
1
10
-50
0
50
100
150
F05B23VR
V
GS
= 10V
pulse test
TYP
I
D
= 0.5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
-50
0
50
100
150
F05B23VR
V
DS
= 10V
I
D
= 0.2mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]
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