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Datasheet: ZPD22 (Shanghai Lunsure)

0.5w Silicon Planar Zener Diodes

 

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CE
ZPD2.7 THRU ZPD51
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
FEATURES
. The zener voltage are gaded accrding to the intermational E24
standard. Over voltage tolerance and higher zener voltage
on request
MECHANICAL DATA
.
Case: DO-35 glass case
. Polarity: Color band denotes cathode end
.
weight: Approx. 0.13 gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(T
A
=25 )
Symbols
Value
Units
Zener current see table "Characteristics"
Power dissipation at TA=25
P
tot
mW
Junction temperature
T
J
Storage temperature range
T
STG
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(T
A
=25 )
Symbols
Min
Typ
Max
Units
Thermal resistance junction to ambient
R
JA
300
1)
K/W
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
500
1)
175
-55 to +175
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
ZPD2.7 THRU ZPD51
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
ZDP2.7 THRU ZPD51 SILICON PLANAR ZENER DIODES
Temp. Coeff.
Reverse
of Zener Volt
Voltage
at
at
Tamb=
Tamb=
I
Z
=5mA
I=100nA Min.
45
25
v
mA
V
mA
VZ
10
-4
/K
V
R
(V)
I
Z
mA
I
Z
mA
ZPD2.7
2.7
2.5...2.9
<83
<50
-9...-4
135
160
ZPD3
3.0
2.8...3.2
-9...-3
117
140
ZPD3.3
3.3
3.1...3.5
-8...-3
109
130
ZPD3.6
3.6
3.4...3.8
-8...-3
101
120
ZPD3.9
3.9
3.7...4.1
-7...-3
92
110
ZPD4.3
4.3
4.0...4.6
-6...-1
85
100
ZPD4.7
4.7
4.4...5.0
<78
-5...+2
76
90
ZPD5.1
5.1
4.8...5.4
<60
<480
-3...+4
0.8
67
80
ZPD5.6
5.6
5.2...6.0
<40
<400
-2...+6
1
59
70
ZPD6.2
6.2
5.8...6.6
<10
<200
-1...+7
2
54
64
ZPD6.8
6.8
6.4...7.2
<8
<150
+2...+7
3
49
58
ZPD7.5
7.5
7.0...7.9
<7
+3...+7
5
44
53
ZPD8.2
8.2
7.7...8.7
<7
+4...+7
6
40
47
ZPD9.1
9.1
8.5...9.6
<10
+5...+8
7
36
43
ZPD10
10
9.4...10.6
<15
<70
+5...+8
7.5
33
40
ZPD11
11
10.4...11.6
<20
<70
+5...+9
8.5
30
36
ZPD12
12
11.4...12.7
<20
<90
+6...+9
9
28
32
ZPD13
13
12.4...14.1
<25
<110
+7...+9
10
25
29
ZPD15
15
13.8...15.6
<30
<110
+7...+9
11
23
27
ZPD16
16
15.3...17.1
<40
<170
+8...+9.5
12
20
24
ZPD18
18
16.8...19.1
<50
<170
+8...+9.5
13
18
21
ZPD20
20
18.8...21.2
<50
+8...+10
15
17
20
ZPD22
22
20.8...23.3
<55
+8...+10
16
16
18
ZPD24
24
22.8...25.6
+8...+10
18
13
16
ZPD27
27
25.1...28.9
+8...+10
20
12
14
ZPD30
30
28...32
+8...+10
22.5
10
13
ZPD33
33
31...35
+8...+10
25
9
12
ZPD36
36
34...38
<90
+8...+10
27
9
11
ZPD39
39
37...41
<90
<300
+10...+12
29
8
10
ZPD43
43
40...46
<100
<700
+10...+12
32
7
9.2
ZPD47
47
44...50
<100
<750
+10...+12
35
6
8.5
ZPD51
51
48...54
<100
<750
+10...+12
38
6
7.8
NOTE 1)TESTED WITH PULSE Tp=20mS
2) Valid provided that electrodes are kept ambient temperature at a distance of 8mm from case
1
Zener Voltage range
1)
Current of
Admissible Zener
5
<95
<80
<500
<50
Type
V
znom
I
ZT
for
V
ZT
2)
r
Zjt
and
r
Zjk
at
I
ZK
Dynamic resistance
<220
<250
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
ZPD2.7 THRU ZPD51
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
ZPD2.7 THRU ZPD51 SILICON PLANAR POWER ZENER DIODES
BREAKDOWN CHARACTERISITICS AT
T
J
=CONSTANT(PULSED)
BREAKDOWN CHARACTERISITICS AT
T
J
=CONSTANT(PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
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