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Datasheet: F20M40CT (SemiWell Semiconductor)

20a Schottky Barrier Rectifier

 

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SemiWell Semiconductor
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
RRM
Repetitive Peak Reverse Voltage
40
V
V
R
Maximum DC Reverse Voltage
40
V
I
F(AV)
Average Forward Current @ T
C
= 105C
Per Diode
Total Device
10
20
A
A
I
FSM
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions half sinewave,single phase, 60Hz)
250
A
Eas
Non-Repetitive Avalanche Energy @ T
C
=25C , Vdd = 15V , L=18uH
5.5
mJ
T
J
Maximum Junction Temperature
- 65 ~ 125
C
T
STG
Storage Temperature Range
- 65 ~ 150
C
Thermal Characteristics
Symbol
Parameter
Value
Units
R
JC
Maximum Thermal Resistance, Junction-to-Case ( per diode )
3.5
C/W
Nov, 2002. Rev. 0
Features
Plastic material meets UL94V-0
Metal silicon junction
Very low forward voltage drop
High current / High surge capability
Guarding for over voltage protection
Lead solderable per MIL-STD202,method 208 guaranteed
Lead temperature for soldering purpose 250C Max
for
10 second
Weight : 2.2 gram (approximately)
General Description
The F20M40CT schottky Rectifier has been designed for
applcations requiring low forward voltage drop and switching
power supply, dc-dc converter, free-wheeling diode, battery
charging, polarity protection application.
3
2
1
Symbol
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1/3
F20M40CT
F20M40CT
F20M40CT
F20M40CT
SemiWell
Semiconductor
20A Schottky Barrier Rectifier
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
:
b
b
PROVISIONAL
TO-220F
1
2
3
Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Units
I
R
Reverse Leakage Current
V
R
= V
RRM
T
C
= 25 C
T
C
= 125 C
-
-
1
50
mA
V
F
Forward Voltage Drop
I
F
= 10 A T
C
= 25 C
I
F
= 10 A T
C
= 125 C
I
F
= 20 A T
C
= 25 C
I
F
= 20 A T
C
= 125 C
-
-
0.55
0.50
0.70
0.60
V
C
T
Typical Junction Capacitance @ f
T
=1MHZ , V
R
=4V , Tj
=25
600
P
F
F20M40CT
F20M40CT
F20M40CT
F20M40CT
2/3
1
10
100
0
50
100
150
200
250
300
P
e
ak
Fo
rw
ar
d S
u
r
g
e
C
u
rr
en
t
,
I
FSM
[A
]
Reverse Voltage, V
R
[V]
0
25
50
75
100
125
150
0
4
8
12
16
20
24
A
v
e
r
ag
e for
w
ar
d C
u
r
r
en
t, I
F(
AV)
[A
]
Case Temperature, T
C
[ ]
-
0.1
1
10
100
1000
. Notes
6
1. T
J
= 25[ ]
-
2. F = 1MHz
3. Vsig = 50mV
P-P
Ju
ncti
on
cap
a
ci
ta
nce,
C
J
[pF
]
Reverse Voltage, V
R
[V]
0
8
16
24
32
40
48
56
0.01
0.1
1
10
T
J
=125
-
T
J
=75
-
T
J
=25
-
R
e
v
e
rs
e Curr
e
n
t, I
R
[mA]
Reverse Voltage, V
R
[V]
0.2
0.4
0.6
0.8
1.0
0.1
1
10
T
J
=125
-
T
J
=25
-
Forward Voltage Drop, V
F
[V]
F
o
r
w
ar
d C
u
rr
ent,
I
F
[A
]
3/3
Fig 1. VF-IF Characteristic
Fig 2. VR-IR Characteristic
Fig 3. Typical Junctiion Capacitance
Fig 4. Forward Current derating Curve
Fig 5. Maximum non-Repetitive forward
Surge current per diode
F20M40CT
F20M40CT
F20M40CT
F20M40CT
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