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Datasheet: F3002 (Polyfet RF Devices)

Patented Gold Metalized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor

 

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Polyfet RF Devices
RF CHARACTERISTICS ( WATTS OUTPUT )
300
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
PATENTED GOLD METALIZED
300 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
500 Watts
0.35
C
o
200
-65
to 150
36 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Pow er Gain
Drain Ef f iciency
Load Mismatch Tolerance
dB
%
Relative
12
60
4
20:1
Idq =
Idq =
Idq =
4
4
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 100 MHz
F = 100 MHz
F = 100 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdow n Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forw ard Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
12
1
7
1
7
0.1
50
400
40
240
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.2
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.6
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 20
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
t
TM
C
o
C
o
C/W
o
F3002
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
1/12/98
VDMOS TRANSISTOR
POUT VS PIN GRAPH
F3002
F3A 2 DICE CAPACITANCE
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLTS
Coss
Ciss
Crss
F3A 2 DICE IV
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
ID IN AMPS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
F3A 2 DICE ID & GM Vs VG
0.10
1.00
10.00
100.00
0
2
4
6
8
10
Vgs in Volts
Id in a
mps
; G
m
in
m
hos
Id
gM
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 1/12/98
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
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