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Datasheet: F2013 (Polyfet RF Devices)

Patented Gold Metalized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor

 

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Polyfet RF Devices
RF CHARACTERISTICS ( WATTS OUTPUT )
20
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
PATENTED GOLD METALIZED
20 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
80 Watts
2.1
C
o
200
-65
to 150
6.4 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
45
1.6
20:1
Idq =
Idq =
Idq =
1.6
1.6
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 1000 MHz
F = 1000 MHz
F = 1000 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
0.8
1
7
1
0.8
1
4.8
36
4
24
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.04
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.08
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
t
TM
C
o
C
o
C/W
o
F2013
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
8/1/97
VDMOS TRANSISTOR
F2013 Pout vs Pin F=1000 Mhz; Idq=1.6A; Vds=28v
Pin in Watts
0
5
10
15
20
25
30
35
0
1
2
3
4
5
6
7
8
Pout
6
7
8
9
10
11
12
Gain
POUT
PIN
Efficiency = 35%
POUT VS PIN GRAPH
F2013
F2A 4 DIE CAPACITANCE
VDS IN VOLTS
1
10
100
0
5
10
15
20
25
30
Crss
Coss
Ciss
F2A 4 DIE IV CURVE
VDS IN VOLTS
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
20
VGS = 2V
VGS = 4V
VGS = 6V
VGS = 8V
VGS = 10V
VGS 12V
F2A 4 DIE GM & ID vs VGS
Vgs in Volts
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
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