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Datasheet: F1120 (Polyfet RF Devices)

Patented Gold Metalized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor

 

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Polyfet RF Devices
RF CHARACTERISTICS ( WATTS OUTPUT )
200
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
PATENTED GOLD METALIZED
200 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
440 Watts
0.4
C
o
200
-65
to 150
20 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Power Gai
Drain Efficienc
Load Mismatch Toleranc
dB
%
Relative
10
55
2
20:1
Idq =
Idq =
Idq =
2
2
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 175 MHz
F = 175 MHz
F = 175 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
5
1
7
1
5
0.18
30
200
25
150
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.25
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.5
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 20
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
t
TM
C
o
C
o
C/W
o
F1120
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
1/12/98
VDMOS TRANSISTOR
F1120 POUT VS PIN F=175
MHZ; IDQ=2.0A; VDS=28.0V
0
50
100
150
200
250
0
2
4
6
8
10
12
14
16
18
20
PIN IN WATTS
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
POUT
GAIN
Efficiency = 75%
POUT VS PIN GRAPH
F1120
F1J 5 DICE CAPACITANCE
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLTS
Coss
Ciss
Crss
F1J 5 DICE IV
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
ID IN AMPS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
F1J 5 DICE ID & GM Vs VG
0.10
1.00
10.00
100.00
0
2
4
6
8
10
12
Vgs in Volts
Id in amps; Gm in mhos
Id
gM
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 1/12/98
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