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Datasheet: F1108 (Polyfet RF Devices)

Patented Gold Metalized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor

 

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Polyfet RF Devices
RF CHARACTERISTICS ( WATTS OUTPUT )
80
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
PATENTED GOLD METALIZED
80 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
170 Watts
0.95
C
o
200
-65
to 150
8 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Pow er Gain
Drain Ef f iciency
Load Mismatch Tolerance
dB
%
Relative
11
55
0.8
20:1
Idq =
Idq =
Idq =
0.8
0.8
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 400 MHz
F = 400 MHz
F = 400 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdow n Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forw ard Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
2
1
7
1
2
0.7
12
80
10
60
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.1
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.2
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
t
TM
C
o
C
o
C/W
o
F1108
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
8/1/97
VDMOS TRANSISTOR
F1108 POUT VS PIN F=400
MHZ; IDQ=0.8A; VDS=28.0V
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
PIN IN WATTS
POU
T
IN WA
TT
S
9.50
10.50
11.50
12.50
13.50
14.50
15.50
GAIN IN DB
POUT
GAIN
Efficiency = 55%
POUT VS PIN GRAPH
F1108
F1J 2 DICE CAPACITANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLTS
Coss
Ciss
Crss
F1J 2 DIE IV CU RVE
Vds in Volts
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1J 2 DICE ID & GM Vs VG
0.10
1.00
10.00
100.00
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
Id in a
mps
; G
m
in
m
hos
Id
gM
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
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