HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: F1020 (Polyfet RF Devices)

Patented Gold Metalized Silicon Gate Enhancement Mode Rf Power Vdmos Transistor

 

Скачать: PDF   ZIP
Polyfet RF Devices
RF CHARACTERISTICS ( WATTS OUTPUT )
130
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
PATENTED GOLD METALIZED
130 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
390 Watts
0.45
C
o
200
-65
to 150
20 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Power Gai
Drain Efficienc
Load Mismatch Toleranc
dB
%
Relative
10
60
2
20:1
Idq =
Idq =
Idq =
2
2
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 400 MHz
F = 400 MHz
F = 400 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
5
1
7
1
4
0.25
27.5
165
20
100
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.25
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.5
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 20
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
t
TM
C
o
C
o
C/W
o
F1020
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
1/12/98
VDMOS TRANSISTOR
F1020 POUT vs PIN F=400 MHZ; IDQ=2.0A; VDS=28V
PIN IN WATTS
0
50
100
150
200
250
0
5
10
15
20
25
30
35
40
POUT
6
7
8
9
10
11
12
GAIN
POUT
GAIN
Efficiency = 55%
POUT VS PIN GRAPH
F1020
F1B 5 DIE Capacitance vs Vds
VDS IN VOLTS
10
100
1000
0
5
10
15
20
25
30
Crss
Coss
Ciss
F1B 5 DIE IV CURVE
Vds in Volts
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1B_5 DICE ID & GM VS VG
Vgs in Volts
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
20
Gm
Id
GM
ID
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 1/12/98
© 2017 • ChipFind
Контакты
Главная страница