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Datasheet: B1156 (Panasonic Semiconductor)

Silicon Pnp Epitaxial Planar Type(for Power Switching)

 

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Panasonic Semiconductor
1
Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Large collector current I
C
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Ratings
130
80
7
30
20
100
3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 10A
I
C
= 8A, I
B
= 0.4A
I
C
= 20A, I
B
= 2A
I
C
= 8A, I
B
= 0.4A
I
C
= 20A, I
B
= 2A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 3A, I
B1
= 0.8A, I
B2
= 0.8A,
V
CC
= 50V
min
80
45
90
30
typ
25
0.5
1.2
0.2
max
10
50
260
0.5
1.5
1.5
2.5
Unit
A
A
V
V
V
V
V
MHz
s
s
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP3 Full Pack Package(a)
15.0
0.3
21.0
0.5
16.2
0.5
12.5
Solder Dip
3.5
0
.7
15.0
0.2
5.0
0.2
11.0
0.2
10.9
0.5
5.45
0.3
3
2
1
1.1
0.1
2.0
0.2
0.6
0.2
2.0
0.1
3.2
0.1
3.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
90 to 180
130 to 260
Note: Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the rank classification.
2
Power Transistors
2SB1156
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
200
160
120
80
40
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
20
16
12
8
4
T
C
=25C
I
B
=300mA
20mA
40mA
60mA
80mA
200mA
140mA
100mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
(1) I
C
/I
B
=10
(2) I
C
/I
B
=20
T
C
=25C
(1)
(2)
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
T
C
=25C
100C
25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
30
10
1
0.3
3
1
3
10
30
100
300
1000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0
8
2
6
4
7
1
5
3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
10ms
t=1ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SB1156
R
th(t)
-- t
10
3
10
2
10
2
1
10
1
10
10
3
10
4
10
1
1
10
10
2
10
3
(1)
(2)
(1) P
T
=10V
0.3A (3W) and without heat sink
(2) P
T
=10V
1A (10W) and with a 100
100
2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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