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Datasheet: F2000D (OSRAM GmbH)

Ingaalp-high Brightness-lumineszenzdiode (617nm, High Current and Flux), Ingaalp High Brightness Led (617nm, High Current and Flux)

 

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OSRAM GmbH
F 2000D
InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux)
InGaAlP High Brightness LED (617nm, High Current and Flux)
Vorlufige Daten / Preliminary Data
2003-04-15
1
Wesentliche Merkmale
Optimierte Lichtauskopplung durch
Oberflchenstrukturierung und Stromverteilung
Chipgre 700 x 700
m
2
Wellenlnge (typ.) : 617 nm
Technologie:InGaAIP
Typ. Lichtflu: 20 lm @ 400 mA (gepulst, im
Golden Dragon
Gehuse).
Anwendungen
Ampeln
Hinterleuchtung (LCD, Handy, Schalter,
Tasten, Displays, Werbebeleuchtung,
Allgemeinbeleuchtung)
Beleuchtung im Automobilbereich
(z.B. Instrumentenbeleuchtung, Bremslichter
und Blinklichter)
Ersatz von Kleinst-Glhlampen
Tragbare Beleuchtung
Fassadenbeleuchtung im Innen- und
Auenbereich
Typ
Type
Bestellnummer
Ordering Code
Beschreibung
Description
F 2000D
Q65110A0981
Rot emittierender Chip mit optimierter Lichtauskopplung
durch Oberflchenstrukturierung, Oberseite Anodenan-
schluss
Red emitting chip with optimized light extraction due to sur-
face structuring, top side anode connection
Feature
Optimized light extraction due to surface
structuring and current distribution
Chip size 700 x 700
m
2
Wavelength (typ.): 617 nm
Technology: InGaAIP
Typ. luminous flux: 20 lm @ 400 mA (pulsed, in
Golden Dragon
package)
Applications
Traffic lights
Backlighting (LCD, cellular phones, switches,
keys, displays, illuminated advertising,general
lighting)
Automotive lighting (e.g. dashboard
backlighting, brake lights, turn signal lamps,
etc.)
Substitution of micro incandescent lamps
Portable light source
Indoor and outdoor commercial and residential
architectural lighting
2003-04-15
2
F 2000D
Elektrische Werte (
T
A
= 25
C)
Electrical values
1)
(
T
A
= 25
C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
2)
Einheit
Unit
min.
typ.
max.
Dominantwellenlnge
Dominant wavelength
I
F
= 400 mA, t
p
= 1.8 ms
dom
613
623
nm
Sperrspannung
Reverse voltage
I
R
= 1
A
V
R
12
V
Durchla
spannung
Forward voltage
I
F
= 400 mA, t
p
= 1.8 ms
V
F
2.6
V
Lichtstrom
Luminous Flux
3)
I
F
= 400 mA, t
p
= 1.8 ms
V
8000
mlm
1)
Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes.
Sample-test: Sampling density/samples per cm (grid): 1,6/cm.
If a sample fails, the distance area to the next non-failure samples is manually removed by a vacuum tool.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3)
Luminous flux is measured in integrating sphere
F 2000D
2003-04-15
3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
1)
Einheit
Unit
min.
typ.
max.
Chipkantenlnge (x-Richtung)
Length of chip edge (x-direction)
L
x
0.68
0.7
0.72
mm
Chipkantenlnge (y-Richtung)
Length of chip edge (y-direction)
L
y
0.68
0.7
0.72
mm
Durchmesser des Wafers
Diameter of the wafer
D
100
mm
Chiphhe
Die height
H
200
220
240
m
Bondpaddurchmesser
Diameter of bondpad
d
110
120
130
m
Weitere Informationen
Additional information
2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rckseitenmetallisierung
Metallization backside
Goldlegierung
Gold alloy
Trennverfahren
Dicing
Sgen
Sawing
Verbindung Chip - Trger
Die bonding
Kleben
Epoxy bonding
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2)
All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backside is performed with stereo microscope with incident light with 40x-80x magnification.
Areas > cm which have an amount of more than 3% failed dies will be removed. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas > 1 cm which have an amount of more than 50% failed dies and areas > 2 cm which have an
amount of more than 25% failed dies will be removed. In areas with failure density higher than 1% each failure die is
inked individually. On request the visual inspection of chip frontside can be performed by an automated visual
inspection combined with automated inking additionally. The quality inspection (final visual inspection) is performed
by production. An additional visual inspection step as special release procedure by QM after the final visual inspection
is not installed.
F 2000D
2003-04-15
4
fj
Grenzwerte
1)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum Operating temperature range
T
op
-40...+100
C
Maximaler Lagertemperaturbereich
Maximum storage temperature range
T
stg
-40...+100
C
Maximaler Durchlastrom (T
A
= 25C)
Maximum forward current (T
A
= 25C)
I
F
400
mA
Maximaler Pulsstrom (T
A
= 25C)
Maximum surge Current (T
A
= 25C)
t
p
= 10 s, D = 0.05
I
peak
0.4
A
Maximale Sperrschichttemperatur
Maximum junction temperature
T
j
125
C
1)
Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in an OSRAM Opto Semiconductor's
Golden Dragon
package.
F 2000D
2003-04-15
5
Durchlassstrom
1)
I
F
= f (V
F
)
Forward Current
T
A
= 25 C
Maximal zulssiger Durchlastrom
1)
I
F
= f (T
S
)
Maximum Permissible Forward Current
1)
Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductor's
Golden Dragon package.
Relative Lichtstrke
1)
I
V
/I
V
(400mA) = f (I
F
)
Relative Luminous Intensity
T
A
= 25 C
Relative Lichtstrke
1)
I
V
/I
V
(25C) = f (T
S
)
Relative Luminous Intensity
I
F
= 400 mA
OHL00787
10
0
1
10
2
10
10
3
mA
I
F
V
F
1.2
V
1.4 1.6 1.8 2.0 2.2 2.4
2.8
OHL01787
mA
I
F
0
0
20
C
60
40
80
100
T
S
50
100
150
200
250
300
350
400
450
OHL00788
10
-4
10
-3
10
-2
10
1
I
10
-1
mA
V (400 mA)
I
V
I
F
10
-1
0
10
1
10
2
10
3
10
OHL00987
0
-40
C
T
I
V (25 C)
I
V
-20
0
20
40
60
100
0.2
0.4
0.6
0.8
1.0
1.2
1.6
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