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Datasheet: F0292C (OSRAM GmbH)

High Brightness Led Chip, Pure-green, 7 Mil

 

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OSRAM GmbH
F 0283C
InGaAlP-High Brightness-Lumineszenzdiode (570 nm, Low Current)
InGaAlP High Brightness Light Emitting Diode (570 nm, Low Current)
Vorlufige Daten / Preliminary Data
2003-04-07
1
Wesentliche Merkmale
Chipgre 170 x 170
m
2
Wellenlnge: 570 nm
Technologie:InGaAIP
Anwendungen
Niedrigstromanwendungen
optischer Indikator
Hinterleuchtung (LCD, Handy, Schalter,
Tasten, Displays, Werbebeleuchtung,
Allgemeinbeleuchtung)
Beleuchtung im Automobilbereich
(z.B. Instrumentenbeleuchtung, Bremslichter
und Blinklichter)
Ersatz von Kleinst-Glhlampen
Markierungsbeleuchtung
Signal- und Symbolleuchten
Typ
Type
Bestellnummer
Ordering Code
Beschreibung
Description
F 0283C
Q65110A0957
Gelbgrn emittierender Chip, Oberseite Anodenanschluss
Yellowish green emitting chip, top side anode connection
Feature
Chip size 170 x 170
m
2
Wavelength: 570 nm
Technology: InGaAIP
Applications
Low Current applications
optical indicators
Backlighting (LCD, cellular phones, switches,
keys, displays, illuminated advertising,general
lighting)
Automotive lighting (e.g. dashboard
backlighting, brake lights, turn signal lamps,
etc.)
Substitution of micro incandescent lamps
Marker lights
Signal and symbol luminaire
2003-04-07
2
F 0283C
Elektrische Werte (
T
A
= 25
C)
Electrical values
1)
(
T
A
= 25
C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
2)
Einheit
Unit
min.
typ.
max.
Dominantwellenlnge
Dominant wavelength
I
F
= 2 mA
dom
567
577
nm
Spektrale Bandbreite bei 50% von
I
max,
Spectral bandwidth at 50% of
I
max
I
F
= 2 mA
20
nm
Sperrspannung
Reverse voltage
I
R
= 1
A
V
R
12
V
Durchla
spannung
Forward voltage
I
F
= 2 mA
V
F
2.2
V
Lichtstrom
Luminous Flux
3)
I
F
= 2 mA
V
5
8
mlm
1)
Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes.
Sample-test: Sampling density/samples per cm (grid): 1,6/cm.
If a sample fails, the distance area to the next non-failure samples is manually removed by a vacuum tool.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3)
Luminous Flux is measured in integrating sphere.
F 0283C
2003-04-07
3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
1)
Einheit
Unit
min.
typ.
max.
Chipkantenlnge (x-Richtung)
Length of chip edge (x-direction)
L
x
0.15
0.17
0.19
mm
Chipkantenlnge (y-Richtung)
Length of chip edge (y-direction)
L
y
0.15
0.17
0.19
mm
Durchmesser des Wafers
Diameter of the wafer
D
100
mm
Chiphhe
Die height
H
165
185
205
m
Bondpaddurchmesser
Diameter of bondpad
d
90
100
110
m
Weitere Informationen
Additional information
2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rckseitenmetallisierung
Metallization backside
Goldlegierung
Gold alloy
Trennverfahren
Dicing
Sgen
Sawing
Verbindung Chip - Trger
Die bonding
Kleben
Epoxy bonding
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2)
All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backside is performed with stereo microscope with incident light with 40x-80x magnification.
Areas > cm which have an amount of more than 3% failed dies will be removed. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas > 1 cm which have an amount of more than 50% failed dies and areas > 2 cm which have an
amount of more than 25% failed dies will be removed. In areas with failure density higher than 1% each failure die is
inked individually. On request the visual inspection of chip frontside can be performed by an automated visual
inspection combined with automated inking additionally. The quality inspection (final visual inspection) is performed
by production. An additional visual inspection step as special release procedure by QM after the final visual inspection
is not installed.
F 0283C
2003-04-07
4
fj
Grenzwerte
1)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum Operating temperature range
T
op
-40...+100
C
Maximaler Lagertemperaturbereich
Maximum storage temperature range
T
stg
-40...+100
C
Maximaler Durchlastrom (T
A
= 25C)
Maximum forward current (T
A
= 25C)
I
F
15
mA
Maximaler Pulsstrom (T
A
= 25C)
Maximum surge Current (T
A
= 25C)
t
p
= 10 s, D = 0.05
I
FSM
100 mA
Maximale Sperrschichttemperatur
Maximum junction temperature
T
j
125
C
1)
Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in an OSRAM Opto Semiconductor's Mini TOPLED
package.
F 0283C
2003-04-07
5
Durchlassstrom
1)
I
F
= f (V
F
)
Forward Current
T
A
= 25 C
Zulassige Impulsbelastbarkeit
1)
I
F
= f (t
P
)
Permissible Pulse Handling Capability
Duty cycle D = parameter, T
A
= 25 C
1)
Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductor's Mini
TOPLED package.
Relative Lichtstrke
1)
I
V
/I
V
(2mA) = f (I
F
)
Relative Luminous Intensity
T
A
= 25 C
Zulassige Impulsbelastbarkeit
1)
I
F
= f (t
P
)
Permissible Pulse Handling Capability
Duty cycle D = parameter, T
A
= 85 C
V
OHL00802
1.4
10
-3
10
-2
10
-1
10
0
10
1
mA
10
2
I
F
V
F
1.6
1.8
2.0
2.2
OHL00827
10
-5
p
t
F
I
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
A
2
10
s
D
t
P
T
=
T
P
t
I
F
0.01
0.05
0.2
0.1
0.005
0.02
0.5
D
=
1
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.12
OHL00801
10
-1
10
1
10
2
10
-1
10
5
10
0
5
1
mA
2
10
F
I
(2 mA)
I
V
I
V
10
0
OHL00828
10
-5
p
t
F
I
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
A
2
10
s
D
t
P
T
=
T
P
t
I
F
0.01
0.05
0.2
0.1
0.005
0.02
0.5
D
=
1
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.12
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