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Datasheet: BPW34FSE9087 (OSRAM GmbH)

Pin Photodiode, Radiant Sensitive Area 2.65 X 2.65 Mm², Daylight Filter, Reverse Gullwing

 

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OSRAM GmbH
BPW 34 F
Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing
BPW 34 FS
BPW 34 FS (E9087)
2001-06-01
1
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
Wesentliche Merkmale
Speziell geeignet fr Anwendungen bei 950 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
BPW 34 FS/(E9087); geeignet fr Vapor-Phase
Lten und IR-Reflow Lten
Anwendungen
IR-Fernsteuerung von Fernseh- und
Rundfunkgerten, Videorecordern,
Gertefernsteuerungen
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
2001-06-01
Typ
Type
Bestellnummer
Ordering Code
BPW 34 F
Q62702-P929
BPW 34 FS
Q62702-P1604
BPW 34 FS (E9087)
Q62702-P1826
Features
Especially suitable for applications of 950 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BPW 34 FS/(E9087); suitable for vapor-phase
and IR-reflow soldering
Applications
IR remote control of hi-fi and TV sets, video
tape recorders, remote controls of various
equipment
Photointerrupters
2001-06-01
2
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 100
C
Sperrspannung
Reverse voltage
V
R
V
R
(
t
< 2 min)
16
32
V
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C,
= 950 nm)
Charact
1)
eristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotostrom
Photocurrent
V
R
= 5 V,
E
e
= 1 mW/cm
2
I
p
50 (
40)
A
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
950
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
780 ... 1100
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
7.00
mm
2
Abmessung der bestrahlungsempfindlichen
Flche
Dimensions of radiant sensitive area
L
B
L
W
2.65
2.65
mm
mm
Halbwinkel
Half angle
60
Grad
deg.
Dunkelstrom,
V
R
= 10 V
Dark current
I
R
2 (
30)
nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity
S
0.59
A/W
Quantenausbeute
Quantum yield
0.77
Electrons
Photon
Leerlaufspannung,
E
e
= 0.5 mW/cm
2
Open-circuit voltage
V
O
330 (
275)
mV
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
2001-06-01
3
Kurzschlustrom,
E
e
= 0.5 mW/cm
2
Short-circuit current
I
SC
25
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
;
V
R
= 5 V;
= 850 nm;
I
p
= 800
A
t
r
,
t
f
20
ns
Durchlaspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
V
F
1.3
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
72
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.18
%/K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V
NEP
4.3
10
14
Nachweisgrenze,
V
R
= 10 V
Detection limit
D*
6.2
10
12
1)
Kennwerte (
T
A
= 25
C,
= 950 nm)
Charact
1)
eristics (cont'd)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
W
Hz
------------
cm
Hz
W
--------------------------
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
2001-06-01
4
Relative Spectral Sensitivity
S
rel
=
f
(
)
Dark Current
I
R
=
f
(
V
R
),
E
= 0
Directional Characteristics
S
rel
=
f
(
)
OHF00368
0
rel
S
700
20
40
60
80
%
100
nm
800
900
1000
1200
0
OHF00080
R
R
V
0
5
10
15
V
20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Photocurrent
I
P
=
f
(
E
e
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
e
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
E
OHF01097
e
0
10
P
10
1
10
2
10
4
10
-1
10
0
10
1
10
2
4
10
3
10
2
10
1
10
10
0
V
O
A
mV
P
V
O
3
10
W/cm
2
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10
V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
P
tot
=
f
(
T
A
)
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
T
OHF00958
A
0
tot
P
0
20
40
60
80 C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10
0
R
10
0
10
1
10
2
10
3
nA
20
40
60
80 C 100
BPW 34 F, BPW 34 FS, BPW 34 FS (E9087)
2001-06-01
5
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
GEOY6643
4.0 (0.157)
3.7 (0.146)
4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34 F
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area
Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
0.2 (0.008)
Chip position
0...0.1
BPW 34 FS
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