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Datasheet: BP103-3/-4 (OSRAM GmbH)

Phototransistor in TO-18 Metal Package, Half Angle ±55 °

 

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OSRAM GmbH

Document Outline

BP 103
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
2001-02-21
1
Wesentliche Merkmale
Speziell geeignet fr Anwendungen im Bereich
von 420 nm bis 1130 nm
Hohe Linearitt
TO-18, Bodenplatte, klares Epoxy-Gieharz,
mit Basisanschlu
Anwendungen
Computer-Blitzlichtgerte
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
Industrieelektronik
,,Messen/Steuern/Regeln"
Typ
Type
Bestellnummer
Ordering Code
BP 103
Q62702-P75
BP 103-3/4
Q62702-P3577
Features
Especially suitable for applications from
420 nm to 1130 nm
High linearity
TO-18, base plate, transparent epoxy resin
lens, with base connection
Applications
Computer-controlled flashes
Photointerrupters
Industrial electronics
For control and drive circuits
2001-02-21
2
BP 103
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 80
C
Lttemperatur bei Tauchltung
Ltstelle
2 mm vom Gehuse,
Ltzeit
t
5 s
Dip soldering temperature,
2 mm distance
from case bottom
t
5 s
T
S
260
C
Lttemperatur bei Kolbenltung
Ltstelle
2 mm vom Gehuse,
Ltzeit
t
3 s
Iron soldering temperature,
2 mm distance
from case bottom
t
3 s
T
S
300
C
Kollektor-Emitterspannung
Collector-emitter voltage
V
CE
50
V
Kollektorstrom
Collector current
I
C
100
mA
Kollektorspitzenstrom,
<
10
s
Collector surge current
I
CS
200
mA
Emitter-Basisspannung
Emitter-base voltage
V
EB
7
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Wrmewiderstand
Thermal resistance
R
thJA
500
K/W
BP 103
2001-02-21
3
Kennwerte (
T
A
= 25
C,
= 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
420
...
1130
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
0.12
mm
2
Abmessungen der Chipflche
Dimensions of chip area
L
B
L
W
0.5
0.5
mm
mm
Abstand Chipoberflche zu Gehuseoberflche
Distance chip front to case surface
H
0.2
...
0.8
mm
Halbwinkel
Half angle
55
Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
E
e
= 0.5 mW/cm
2
,
V
CB
= 5 V
E
v
= 1000 Ix, Normlicht/standard light a
V
CB
= 5 V
I
PCB
I
PCB
0.9
2.7
A
A
Kapazitt
Capacitance
V
CE
= 0 V,
f
= 1 MHz,
E
= 0
V
CB
= 0 V,
f
= 1 MHz,
E
= 0
V
EB
= 0 V,
f
= 1 MHz,
E
= 0
C
CE
C
CB
C
EB
8
11
19
pF
pF
pF
Dunkelstrom
Dark current
V
CE
= 35 V,
E
= 0
I
CEO
5 (
100)
nA
2001-02-21
4
BP 103
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
-2
-3
-4
-5
Fotostrom,
=
950 nm
Photocurrent
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
E
v
= 1000 lx
Normlicht/standard light A
V
CE
= 5 V
I
PCE
I
PCE
80 ... 160
0.38
125 ... 250
0.6
200 ... 400
0.95
320
1.4
A
mA
Anstiegszeit/Abfallzeit
Rise and fall time
I
C
= 1 mA,
V
CC
= 5 V,
R
L
= 1 k
t
r
,
t
f
5
7
9
12
s
Kollektor-Emitter-
Sttigungsspannung
Collector-emitter saturation
voltage
I
C
=
I
PCEmin
1)
0.3
E
e
= 0.5 mW/cm
2
V
CEsat
150
150
150
150
mV
Stromverstrkung
Current gain
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
140
210
340
530
1)
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe.
1)
I
PCEmin
is the min. photocurrent of the specified group.
I
PCE
I
PCB
---------
BP 103
2001-02-21
5
Relative Spectral Sensitivity
S
rel
=
f
(
)
Output Characteristics
I
C
=
f
(
V
CE
),
I
B
= Parameter
Photocurrent
I
PCE
/
I
PCE25
=
f
(
T
A
),
V
CE
= 5 V
Photocurrent
I
PCE
=
f
(
E
e
),
V
CE
= 5 V
Output Characteristics
I
C
=
f
(
V
CE
),
I
B
= Parameter
Dark Current
I
CEO
/
I
CEO25
=
f
(
T
A
),
V
CE
= 25 V,
E
= 0
Total Power Dissipation
P
tot
=
f
(
T
A
)
Dark Current
I
CEO
=
f
(
V
CE
),
E
= 0
Collector-Emitter Capacitance
C
CE
=
f
(
V
CE
),
f
= 1 MHz,
E
= 0
BP 103
2001-02-21
6
Collector-Emitter Capacitance
C
CB
=
f
(
V
CB
),
f
= 1 MHz,
E
= 0
Directional Characteristics
S
rel
=
f
(
)
Emitter-Base Capacitance
C
EB
=
f
(
V
EB
),
f
= 1 MHz,
E
= 0
BP 103
2001-02-21
7
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
3.6 (0.142)
3.0 (0.118)
4.3 (0.169)
4.1 (0.161)
GETY6017
1.1 (0.043)
0.9 (0.035)
0.9 (0.035)
1.1 (0.043)
5.2 (0.205)
5.5 (0.217)
2.54 (0.100)
spacing
E C B
0.45 (0.018)
(2.7 (0.106))
Chip position
sensitive area
Radiant
14.5 (0.571)
12.5 (0.492)
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