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Datasheet: 2SC4810 (NEC)

Npn Silicon Epitaxial Transistor (darlington Connection) For High-speed Switching

 

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1998
Document No. D15601EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4810
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
8.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
1.8
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
300
s, duty cycle 10%
Data Sheet D15601EJ2V0DS
2
2SC4810
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 5 A, I
B
= 5 mA, L = 180
H
100
V
Collector to emitter voltage
V
CEX(SUS)
I
C
= 5 A, I
B
= 5 mA
L = 180
H, clamped
100
V
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0
1.0
A
Emitter cutoff current
I
EBO
V
EB
= 5 V, I
C
= 0
5.0
mA
DC current gain
h
FE1
*
V
CE
= 2.0 V, I
C
= 2.0 A
2,000
20,000
-
DC current gain
h
FE2
*
V
CE
= 2.0 V, I
C
= 4.0 A
500
-
Collector saturation voltage
V
CE(sat)
*
I
C
= 2.0 A, I
B
= 2.0 mA
0.9
1.5
V
Base saturation voltage
V
BE(sat)
*
I
C
= 2.0 A, I
B
= 2.0 mA
1.5
2.0
V
Turn-on time
t
on
0.5
s
Storage time
t
stg
2.5
s
Fall time
t
f
I
C
= 2.0 A, I
B1
=
-I
B2
= 2.0 mA
R
L
= 25
, V
CC
50 V
Refer to the test circuit.
0.6
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
Data Sheet D15602EJ2V0DS
3
2SC4810
TYPICAL CHARACTERISTICS (Ta = 25



C)
T
o
t
a
l
P
o
w
e
r
Di
s
s
i
pa
t
i
on
P
T
(W)
Ambient Temperature Ta (
C)
Collector to Emitter Voltage V
CE
(V)
Ambient Temperature Ta (
C)
IC
D
e
r
a
tin
g

d
T

(
%
)
Col
l
e
c
t
or Current
I
C
(
A
)
Pulse Width PW (s)
Collector to Emitter Voltage V
CE
(V)
Base to Emitter Voltage V
BE
(V)
Single pulse
T
r
ans
i
ent
T
h
e
r
m
a
l
R
e
si
st
an
c
e

r
t
h
(j
-a
)
(t)
(
C/
W)
Col
l
e
c
t
or Current
I
C
(
A
)
Col
l
e
c
t
or Current
I
C
(A
)
Single pulse
Data Sheet D15601EJ2V0DS
4
2SC4810
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
DC Current
Gai
n

h
FE
Col
l
e
c
t
or S
a
t
u
ra
t
i
on V
o
l
t
age
V
CE
(
s
a
t
)
(V
)
B
a
s
e

S
a
t
u
ra
t
i
on V
o
l
t
age
V
RE
(
s
a
t
)
(
V
)
Fa
ll T
i
me

t
f
(
s)
S
t
orageTi
m
e
t
st
g
(
s)
T
u
rn-On T
i
m
e
t
on
(
s)
Collector Current I
C
(A)
Data Sheet D15602EJ2V0DS
5
2SC4810
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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