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Datasheet: 2SC4346 (NEC)

Npn Silicon Triple Diffused Transistor For High Speed Switching, High Voltage Switching

 

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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
DATA SHEET
Document No. D17082EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4346
TO-251 (MP-3)
2SC4346-Z
TO-252 (MP-3Z)

DESCRIPTION
The 2SC4346 is a mold power transistor developed for
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
FEATURES
Small package, but can control for high-current
Low collector saturation voltage
V
CE(sat)
= 1.0 V MAX. (I
C
= 2.0 A)
Ultra high-speed switching
t
f
= 0.3
s MAX. (I
C
= 2.0 A)
Base reverse bias safe operating area is wide
V
CEX(SUS)1
= 450 V MIN. (I
C
= 2.0 A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Collector to Base Voltage
V
CBO
500
V
Collector to Emitter Voltage
V
CEO
400
V
Emitter to Base Voltage
V
EBO
8.0
V
Collector Current (DC)
I
C(DC)
5.0
A
Collector Current (pulse)
I
C(pulse)
Note1
10 A
Base current (DC)
I
B(DC)
2.5
A
Total Power Dissipation
P
T1
(T
C
= 25C)
18
W
Total Power Dissipation
P
T2
(T
A
= 25C)
1.0
Note2
, 2.0
Note3
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-55 to +150
C

Notes 1.
PW
10 ms, Duty Cycle 50%
2. Mounted on print board
3. Mounted on ceramic substrate of 7.5 mm
2
x 0.7 mm


Data Sheet D17082EJ2V0DS
2
2SC4346,4346-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Collector to Emitter Voltage
V
CEO(SUS)
I
C
= 2.0 A, I
B1
= 0.4 A, L = 1 mH
400
V
V
CEX(SUS)1
I
C
= 2.0 A, I
B1
=
-I
B2
= 0.4 A,
L = 180
H, Clamped
450 V
V
CEX(SUS)2
I
C
= 4.0 A, I
B1
= 1.0 A,
-I
B2
= 0.4 A,
L = 180
H, Clamped
400 V
Collector Cut-off Current
I
CBO
V
CB
= 400 V, I
E
= 0
10
A
I
CER
V
CB
= 400 V, R
BE
= 51
, T
A
= 125C
1.0
mA
I
CEX1
V
CB
= 400 V, V
BE(OFF)
=
-5 V
100
A
I
CEX2
V
CB
= 400 V, V
BE(OFF)
=
-5 V, T
A
= 125C
1.0
mA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
A
DC Current Gain
Note
h
FE1
V
CE
= 5.0 V, I
C
= 5 mA
15
h
FE2
V
CE
= 5.0 V, I
C
= 0.5 A
20
80
h
FE3
V
CE
= 5.0 V, I
C
= 2.0 A
10
Collector Saturation Voltage
Note
V
CE(sat)
I
C
= 2.0 A, I
B
= 0.4 A
0.5
1.0
V
Base Saturation Voltage
Note
V
BE(sat)
I
C
= 2.0 A, I
B
= 0.4 A
1.0
1.5
V
Turn-on Time
t
on
I
C
= 2.0 A, R
L
= 75
0.7
s
Storage Time
t
stg
I
B1
=
-I
B2
= 0.4 A, V
CC
150 V
2.5
s
Fall Time
t
f
See Test Circuit
0.3
s
Note Pulsed
h
FE
CLASSIFICATION
Marking M
L
K
h
FE2
20 to 40
30 to 60
40 to 80
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
V
CC
= 150 V
R
L
= 75
I
B1
I
B2
I
C
I
C
T.U.T.
V
IN
PW
PW = 50 s
-V
BB
=
-5 V
Duty Cycle
2 %
Base current
waveform
Collector current
waveform
t
on
t
stg
t
f
90 %
I
B2
I
B1
10 %
Data Sheet D17082EJ2V0DS
3
2SC4346,4346-Z
TYPICAL CHARACTERISTICS (T
A
= 25C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
P
T
- Total Powe
r
Dissipation - W
With infinite heatsink
(T
C
= 25C)
Mounted on print board
(Note) 2SC4346-Z
Mounted on ceramic
subsutrate of 7.5 mm
2
x 0.7 mm
(Note)
0
0
2
4
6
8
10
12
50
100
150
200
T
A
- Ambient Temperature - C
I
C
- Collector Cu
r
r
ent - A
0.01
1
10
100
1000
0.1
1.0
10
PW = 1
s
I
C(DC)
I
C(pulse)
Power Dissipation Limited
s/b Limited
T
C
= 25
C
10
s
100
s
1 ms
10 ms
V
CE
- Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs. COLLECTOR CURRENT
I
C
- Collector Cu
r
r
ent - A
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
I
B
= 100 mA
90 mA
80 mA
70 mA
60 mA
50 mA
40 mA
30 mA
20 mA
10 mA
V
CE
- Collector to Emitter Voltage - V
h
FE
DC
Cur
r
ent
Gain
0.01
0.001
V
CE
= 5 V
Pulsed
0.1
1
10
100
I
C
- Collector Current - A
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLCTOR CURRENT
TURN-ON, STORAGE TIME AND FALL TIME vs.
COLLECTOR CURRENT
V
BE(
s
a
t)
- Base Satu
ration Voltage - V
V
CE
(s
at)
- Collector
Saturation Voltage
- V
0.01
0.001
0.1
1.0
10
1
10
I
C
= 5 x I
B
Pulsed
V
BE(sat)
V
CE(sat)
I
C
- Collector Current - A
t
f
- Fal
l
Ti
me -
s
t
st
g
- Stora
ge Time
-
s
t
on

- Turn
-on Ti
me
-
s
0.1
1
10
10
0.1
1
V
CC
= 200 V
I
C
: I
B1
: I
B2
= 10 : 1 :
-2
Pulsed
t
stg
t
f
t
on
I
C
- Collector Current - A
Data Sheet D17082EJ2V0DS
4
2SC4346,4346-Z
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Fin (Collector)
2
1
3
6.5 0.2
5.0 0.2
4
1.5
-
0.1
+0.2
5.5 0.2
7.0 MIN.
13.7 MIN.
2.3
2.3
0.75
0.5 0.1
2.3 0.2
1.6 0.2
1.1 0.2
0.5
-0.1
+0.2
0.5
-0.1
+0.2
1. Base
2. Collector
3. Emitter
4. Fin (Collector)
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8 TYP.
0.7
1.10.2

2SC4346,4346-Z









The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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