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Datasheet: 2SC4332 (NEC)

Npn Silicon Epitaxial Transistor For High-speed Switching

 

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Document Outline

SILICON POWER TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D16430EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SC4332 and 2SC4332-Z are mold power transistors
developed for high-speed switching and features a very low
collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Low collector saturation voltage
V
CE(sat)
= 0.3 V MAX. (I
C
= 3 A
/
I
B
= 0.15 A)
Fast switching speed:
t
f
0.3
s MAX. (I
C
= 3 A)
High DC current gain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25



C)
Collector to Base Voltage
V
CBO
100
V
Collector to Emitter Voltage
V
CEO
60
V
Base to Emitter Voltage
V
EBO
7.0
V
Collector Current (DC)
I
C(DC)
5.0
A
Collector Current (pulse)
I
C(pulse)
Note1
10
A
Base Current (DC)
I
B(DC)
2.5
A
Total Power Dissipation
P
T
(T
C
= 25
C)
15
W
Total Power Dissipation
P
T
(T
A
= 25
C)
1.0
Note2
, 2.0
Note3
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
55 to +150
C
Notes 1. PW
10 ms, duty cycle
50%
2. Printing borard mounted
3. 7.5 mm
2
x 0.7 mm, ceramic board mounted
PACKAGE DRAWING (Unit: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Fin (collector)
Data Sheet D16430EJ1V0DS
2



2SC4332, 2SC4332-Z
ELECTRICAL CHARACTERISTICS (T
A
= 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
V
CEO(SUS)
I
C
= 3.0 A, I
B
= 0.3 A, L = 1 mH
60
V
Collector to Emitter Voltage
V
CEX(SUS)
I
C
= 3.0 A, I
B1
=
-
I
B2
= 0.3 A,
V
BE(OFF)
=
-
1.5 V, L = 180
H,
clamped
60
V
Collector Cut-off Current
I
CBO
V
CE
= 60 V, I
E
= 0
10
A
Collector Cut-off Current
I
CER
V
CE
= 60 V, R
BE
= 51
, T
A
= 125
C
1.0
mA
Collector Cut-off Current
I
CEX1
V
CE
= 60 V, V
BE(OFF)
=
-
1.5 V
10
A
Collector Cut-off Current
I
CEX2
V
CE
= 60 V, V
BE(OFF)
=
-
1.5 V,
T
A
= 125
C
1.0
mA
Emitter Cut-off Current
I
EBO
V
EB
= 5.0 V, I
C
= 0
10
A
DC Current Gain
h
FE1
Note
V
CE
= 2.0 V, I
C
= 0.5 A
100
DC Current Gain
h
FE2
Note
V
CE
= 2.0 V, I
C
= 1.0 A
100
400
DC Current Gain
h
FE3
Note
V
CE
= 2.0 V, I
C
= 3.0 A
60
Collector Saturation Voltage
V
CE(sat)1
Note
I
C
= 3.0 A, I
B
= 0.15 A
0.3
V
Collector Saturation Voltage
V
CE(sat)2
Note
I
C
= 4.0 A, I
B
= 0.2 A
0.5
V
Base Saturation Voltage
V
BE(sat)1
Note
I
C
= 3.0 A, I
B
= 0.15 A
1.2
V
Base Saturation Voltage
V
BE(sat)2
Note
I
C
= 4.0 A, I
B
= 0.2 A
1.5
V
Collector Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
130
pF
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
E
=
-
0.5 A
150
MHz
Turn-on Time
t
on
0.3
s
Storage Time
t
stg
1.5
s
Fall Time
t
f
I
C
= 3.0 A, R
L
= 16.7
,
I
B1
=
-
I
B2
= 0.15 A, V
CC
50 V
Refer to the test circuit.
0.3
s
Note Pulse test PW
350
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D16430EJ1V0DS
3



2SC4332, 2SC4332-Z
[MEMO]



2SC4332, 2SC4332-Z
M8E 00. 4
The information in this document is current as of October, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
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