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Datasheet: 2SC4226 (NEC)

High Frequency Low Noise Amplifier Npn Silicon Epitaxial Transistor Super Mini Mold

 

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NEC
The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SC4226
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
1993
DATA SHEET
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor
has been applied small mini mold package.
FEATURES
Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
Small Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4226-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector)face to perforation side of the
tape.
2SC4226-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4226)
1.25 0.1
2.1 0.1
2.0 0.2
0.3
0
+0.1
0.65
0.65
0.3
0
+0.1
2
1
3
0.9 0.1
0.3
0.15
0.05
+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Document No. P10368EJ3V0DS00 (3rd edition)
(Previous No. TC-2402)
Date Published July 1995 P
Printed in Japan
2
2SC4226
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
40
110
250
V
CE
= 3 V, I
C
= 7 mA*
1
Gain Bandwidth Product
f
T
3.0
4.5
GHz
V
CE
= 3 V, I
C
= 7 mA
Feed back Capacitance
C
re
0.7
1.5
pF
V
CE
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
7
9
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure
NF
1.2
2.5
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
*1
Pulse Measurement ; PW
350
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
R23
R24
R25
Marking
R23
R24
R25
h
FE
40 to 80
70 to 140
125 to 250
3
2SC4226
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
V
CE
= 3 V
f = 1.0 GHz
200
100
20
10
0
0.5
1.0
V
CE
= 3 V
25
20
15
10
5
0
5
10
V
CE
= 3 V
f = 1.0 GHz
200
100
50
20
10
0.5
1
5
10
50
V
CE
= 3 V
I
B
=
160
A
Free Air
0
50
100
150
140
A
120
A
100
A
80
A
60
A
40
A
20
A
20
10
5
2
1
0.5
1
5
10
50
15
10
5
0
0.5
1
5
10
50
100
4
2SC4226
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
INSERTION POWER GAIN vs. FREQUENCY
f Frequency GHz
|S
21e
|
2
Insertion Power Gain dB
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
6
4
2
0
0.5
1
5
10
50
100
V
CE
= 3 V
f = 1 GHz
24
20
16
12
8
4
0
0.1
0.2
0.5
1.0
2.0
5.0
V
CE
= 3 V
I
C
= 7 mA
1
2
5
10
20
50
f = 1 MHz
5.0
1.0
0.5
0.2
0.1
2.0
5
2SC4226
S-PARAMETER
V
CE
= 3 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
.750
45.7
11.858
144.0
.035
63.3
.816
28.5
200.00
.618
84.9
10.093
122.3
.053
53.2
.609
41.8
300.00
.528
114.5
8.219
107.7
.064
50.6
.481
46.7
400.00
.483
134.3
6.684
97.9
.073
50.6
.411
49.1
500.00
.459
148.5
5.565
90.5
.081
50.7
.365
50.5
600.00
.447
158.8
4.737
84.6
.089
52.3
.337
51.5
700.00
.441
167.4
4.134
79.7
.098
53.5
.316
52.6
800.00
.439
174.4
3.653
75.2
.107
54.2
.300
54.2
900.00
.437
179.2
3.283
71.1
.117
54.9
.290
55.9
1000.00
.437
173.7
2.978
67.2
.126
55.6
.281
57.9
1100.00
.440
168.6
2.732
63.7
.136
55.8
.275
59.6
1200.00
.443
163.9
2.533
60.0
.147
55.3
.270
62.3
1300.00
.444
159.6
2.357
56.6
.158
55.4
.267
64.7
1400.00
.449
155.5
2.216
53.4
.169
55.3
.264
67.5
1500.00
.450
151.6
2.077
50.3
.180
54.7
.259
70.6
1600.00
.455
147.9
1.972
47.4
.192
54.5
.258
73.3
1700.00
.459
144.3
1.868
44.3
.202
53.9
.256
76.3
1800.00
.462
140.9
1.789
41.3
.214
53.0
.255
79.6
1900.00
.466
137.5
1.702
38.4
.226
52.3
.253
83.0
2000.00
.470
134.4
1.635
36.1
.238
51.5
.253
86.4
V
CE
= 3 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S
11
S
21
S
12
S
22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
.819
38.9
8.934
148.0
.038
65.8
.868
23.6
200.00
.701
73.4
8.007
127.6
.060
53.1
.687
36.7
300.00
.608
102.3
6.898
112.6
.072
47.6
.560
42.4
400.00
.549
123.6
5.819
101.8
.079
45.2
.483
45.4
500.00
.511
139.6
4.970
93.5
.086
45.7
.434
47.2
600.00
.494
151.0
4.255
86.9
.093
46.5
.402
48.6
700.00
.481
160.8
3.750
81.4
.099
47.2
.379
49.9
800.00
.475
168.6
3.328
76.3
.107
48.9
.361
51.5
900.00
.472
175.7
3.004
72.0
.113
49.7
.350
53.4
1000.00
.471
178.2
2.734
67.7
.122
50.9
.340
55.4
1100.00
.473
172.8
2.522
64.0
.130
51.6
.332
57.3
1200.00
.474
167.6
2.355
60.2
.139
52.3
.328
59.7
1300.00
.474
162.9
2.176
56.7
.148
53.1
.322
62.3
1400.00
.477
158.4
2.038
53.2
.158
53.3
.319
65.2
1500.00
.481
154.4
1.921
49.8
.168
53.7
.315
68.2
1600.00
.484
150.3
1.818
46.7
.177
53.3
.313
70.9
1700.00
.489
146.5
1.726
43.9
.190
53.3
.312
73.9
1800.00
.490
142.9
1.647
40.6
.200
53.0
.312
77.2
1900.00
.495
139.3
1.578
37.6
.212
52.7
.309
80.8
2000.00
.501
136.0
1.505
35.0
.223
52.0
.309
84.0
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