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Datasheet: 2SC4094 (NEC)

Microwave Low Noise Amplifier Npn Silicon Epitaxial Transistor 4 Pins Mini Mold

 

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NEC
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF = 1.2 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 7 mA
S
21e
2
= 15 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 20 mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25

C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
50
250
V
CE
= 8V, I
C
= 20 mA
Gain Bandwidth Product
f
T
9
GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Feed-Back Capacitance
C
re
0.25
0.8
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
13
15
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.0
dB
V
CE
= 8 V, I
C
= 7 mA, f = 1.0 GHz
h
FE
Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
h
FE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
5
5
5
0 to 0.1
0.8
2.90.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
-
0.1
0.16
+0.1
-
0.06
0.4
4
1
3
2
+0.1
-
0.05
2.8
+0.2
-
0.3
1.5
+0.2
-
0.1
0.6
+0.1
-
0.05
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
2
2SC4094
TYPICAL CHARACTERISTICS (T
A
= 25

C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-Total Power Dissipation-mW
200
100
0
50
100
150
T
A
-Ambient Temperature-
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-DC Current Gain
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-GHz
0.5
1
5
10
50
3
2
5
7
10
20
30
1
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
|S
21e
|
2
-Insertion Gain -dB
MAG-Maximum Available Gain-dB
I
C
-Collector Current-mA
f-Frequency-GHz
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
2.0
1.0
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
20
1
2
5
10
20
40
I
C
-Collector Current-mA
MAG
|S
21e
|
2
f = 1.0 GHz
V
CE
= 8 V
f = 1.0 GHz
V
CE
= 8 V
I
C
= 20 mA
0.1
0.2
0.5
1.0
2.0
V
CE
= 8 V
V
CE
= 8 V
30
10
7
5
3
2
20
30
20
10
0
20
10
0
200
100
10
20
50
Free air
3
2SC4094
0.5
1
5
10
50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
7
6
5
4
3
2
1
0
V
CE
= 8 V
f = 1.0 GHz
S-PARAMETER
V
CE
= 8.0 V, I
C
= 5.0 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.774
0.631
0.523
0.460
0.426
0.416
0.417
0.430
0.443
0.458
47.8
88.8
120.9
145.1
166.6
178.2
163.0
152.1
142.1
136.5
12.689
9.952
7.813
5.966
4.841
4.065
3.413
3.035
2.659
2.482
146.5
119.4
100.9
87.6
76.7
68.8
60.7
54.1
48.0
44.3
0.031
0.048
0.058
0.067
0.074
0.083
0.087
0.098
0.105
0.114
65.4
53.4
46.2
43.9
43.8
43.5
41.2
42.8
40.1
43.0
0.882
0.723
0.611
0.564
0.515
0.488
0.459
0.443
0.428
0.414
19.1
29.5
33.4
34.5
37.6
39.6
44.1
45.9
51.1
53.5
V
CE
= 8.0 V, I
C
= 20.0 mA, Z
O
= 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.461
0.364
0.338
0.330
0.334
0.344
0.359
0.383
0.401
0.419
89.8
135.8
163.4
177.9
163.2
153.9
143.1
136.1
128.3
124.7
23.331
13.501
9.535
7.083
5.604
4.722
3.982
3.517
3.094
2.882
121.6
99.2
86.4
77.5
69.3
63.5
56.8
51.1
45.6
42.7
0.021
0.033
0.046
0.056
0.070
0.084
0.091
0.104
0.116
0.127
60.7
61.2
61.5
62.1
60.0
60.4
54.9
54.5
49.9
50.8
0.665
0.511
0.448
0.430
0.402
0.385
0.362
0.350
0.337
0.323
27.7
30.5
29.5
29.5
32.5
34.8
39.5
42.1
47.4
50.5
4
2SC4094
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
-
160
-
150
-
140
-
130
-
120
-
110
-
100
-
90
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02 0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
Z
O
)
NE
GA
TIV
E
RE
A
CT
A
N
C
E C
OM
P
O
N
E
N
T
P
OS
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
-
JX
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
4
0
8
12
16
20
S
21e
2GHz
90
0
30
-
30
60
-
60
180
150
-
150
120
-
120
-
90
0.04
0
0.08
0.12 0.16 0.2
S
12e
CONDITION V
CE
= 8 V, I
C
= 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
CONDITION V
CE
= 8 V
I
C
= 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
S
12e
-FREQUENCY
CONDITION V
CE
= 8 V
I
C
= 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
0.2 GHz
0.2 GHz
2 GHz
2 GHz
I
C
= 5 mA
I
C
= 5 mA
I
C
= 20 mA
I
C
= 20 mA
I
C
= 5 mA
I
C
= 5 mA
S
11e
S
22e
I
C
= 20 mA
I
C
= 20 mA
0.2 GHz
0.2 GHz
2GHz
5
2SC4094
[MEMO]
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