HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: 2SA1010 (NEC)

Silicon Power Transistor

 

Скачать: PDF   ZIP
NEC

Document Outline

Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL
TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25



C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-7.0
A
Collector current (pulse)
I
C(pulse)
*
-15
A
Base current (DC)
I
B(DC)
-3.5
A
Total power dissipation
P
T
(Tc = 25
C)
40
W
Total power dissipation
P
T
(Ta = 25
C)
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
300
s, duty cycle 10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection
Data Sheet D16118EJ2V0DS
2
2SA1010
ELECTRICAL CHARACTERISTICS (Ta = 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
-5.0 A, I
B1
=
-0.5 A, L = 1 mH
-100
V
Collector to emitter voltage
V
CEX(SUS)1
I
C
=
-5.0 A, I
B1
=
-I
B2
=
-0.5 A,
V
BE(OFF)
= 5.0 V, L = 180
H, clamped
-100
V
Collector to emitter voltage
V
CEX(SUS)2
I
C
=
-10 A, I
B1
=
-1.0 A, I
B2
=
-0.5 A,
V
BE(OFF)
= 5.0 V, L = 180
H, clamped
-100
V
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0
-10
A
Collector cutoff current
I
CER
V
CE
=
-100 V, R
BE
= 51
, Ta = 125 C
-1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
-100 V, V
BE(OFF)
= 1.5 V
-10
A
Collector cutoff current
I
CEX2
V
CE
=
-100 V, V
BE(OFF)
= 1.5 V,
Ta = 125
C
-1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0
-10
A
DC current gain
h
FE1
V
CE
=
-5.0 V, I
C
=
-0.5 A*
40
200
DC current gain
h
FE2
V
CE
=
-5.0 V, I
C
=
-3.0 A*
40
200
DC current gain
h
FE3
V
CE
=
-5.0 V, I
C
=
-5.0 A*
20
Collector saturation voltage
V
CE(sat)
I
C
=
-5.0 A, I
B
=
-0.5 A*
-0.6
V
Base saturation voltage
V
BE(sat)
I
C
=
-5.0 A, I
B
=
-0.5 A*
-1.5
V
Turn-on time
t
on
0.5
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
=
-5.0 A, R
L
= 10
,
I
B1
=
-I
B2
=
-0.5 A, V
CC
-50 V
Refer to the test circuit.
0.5
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
40 to 80
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25



C)
T
o
t
a
l
P
o
w
e
r
Di
s
s
i
pa
t
i
on
P
T
(W)
Ambient Temperature Ta (
C)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(
A
)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Data Sheet D16118EJ2V0DS
3
2SA1010
Case Temperature T
C
(
C)
I
C
De
r
a
ti
n
g
d
T
(%
)
T
r
an
si
en
t

T
h
e
r
ma
l
R
e
si
st
a
n
c
e
t
h
(j
-c
)
(
C/W
)
Pulse Width PW (ms)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Co
l
l
e
c
to
r
Cu
r
r
e
n
t
I
C
(A
)
Co
l
l
e
c
to
r
Cu
r
r
e
n
t
I
C
(A
)
Collector Current I
C
(A)
Ba
s
e
S
a
t
u
r
a
ti
o
n

Vo
lta
g
e
V
BE(s
a
t
)
(V)
C
o
l
l
ec
t
o
r
S
a
t
u
r
a
t
i
o
n
V
o
l
t
ag
e
V
CE
(
s
a
t
)
(V)
Collector Current I
C
(A)
DC Cu
rr
e
n
t Ga
i
n

h
FE
Data Sheet D16118EJ2V0DS
4
2SA1010
Collector Current I
C
(A)
Tur
n
-
O
n Time
t
on
(
s)
S
t
orageTi
m
e
t
st
g
(
s)
Fa
ll T
i
me

t
f
(
s)
Base current
waveform
Collector current
waveform
Data Sheet D16118EJ2V0DS
5
2SA1010
[MEMO]
© 2018 • ChipFind
Контакты
Главная страница