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Datasheet: 2SA1008 (NEC)

Silicon Power Transistor

 

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NEC

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Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (T
A
= 25



C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-100
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-2.0
A
Collector current (pulse)
I
C(pulse)
PW
300
s,
duty cycle
10%
-4.0
A
Base current (DC)
I
B(DC)
-1.0
A
T
C
= 25
C
15
W
Total power dissipation
P
T
T
A
= 25
C
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
ORDERING INFORMATION
Part No.
Package
2SA1008
TO-220AB
(TO-220AB)
Data Sheet D14866EJ2V0DS
2
2SA1008
ELECTRICAL CHARACTERISTICS (T
A
= 25



C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
-1.0 A, I
B1
=
-0.1 A, L = 1 mH
-100
V
Collector to emitter voltage
V
CEX(SUS)1
I
C
=
-1.0 A, I
B1
=
-I
B2
=
-0.1 A,
V
BE(OFF)
= 5.0 V, L = 180
H, clamped
-100
V
Collector to emitter voltage
V
CEX(SUS)2
I
C
=
-2.0 A, I
B1
=
-0.2 A, I
B2
= 0.1 A,
V
BE(OFF)
= 5.0 V, L = 180
H, clamped
-100
V
Collector cutoff current
I
CBO
V
CB
=
-100 V, I
E
= 0 A
-10
A
Collector cutoff current
I
CER
V
CE
=
-100 V, R
BE
= 51
, T
A
= 125
C
-1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
-100 V, V
BE(OFF)
= 1.5 V
-10
A
Collector cutoff current
I
CEX2
V
CE
=
-100 V, V
BE(OFF)
= 1.5 V,
T
A
= 125
C
-1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0 A
-10
A
DC current gain
h
FE1
V
CE
=
-5.0 V, I
C
=
-0.1 A
Note
40
DC current gain
h
FE2
V
CE
=
-5.0 V, I
C
=
-1.0 A
Note
40
200
Collector saturation voltage
V
CE(sat)
I
C
=
-1.0 A, I
B
=
-0.1 A
Note
-0.6
V
Base saturation voltage
V
BE(sat)
I
C
=
-1.0 A, I
B
=
-0.1 A
Note
-1.5
V
Turn-on time
t
on
0.5
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
=
-1.0 A, R
L
= 50
,
I
B1
=
-I
B2
=
-0.1 A, V
CC
-50 V
Refer to the test circuit.
0.5
s
Note Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D14866EJ2V0DS
3
2SA1008
TYPICAL CHARACTERISTICS (T
A
= 25



C)
T
o
t
a
l
P
o
w
e
r
Di
s
s
i
pa
t
i
on
P
T
(W)
Ambient Temperature T
A
(
C)
Case Temperature T
C
(
C)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(
A
)
Col
l
e
c
t
or Current
I
C
(
A
)
Pulse Width PW (ns)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Trans
i
ent
Therm
a
l
Res
i
s
t
an
c
e

r
t
h
(j
-c)
(

C/W)
Col
l
e
c
t
or Current
I
C
(
A
)
Derat
i
ng dT
(
%
)
2.0 mm aluminum
board, no insulating
board, silicon grease
coating
With infinite heatsink
(T
C
= 25
C)
Data Sheet D14866EJ2V0DS
4
2SA1008
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
DC Current
Gai
n

h
FE
B
a
s
e

S
a
t
u
ra
t
i
on V
o
l
t
age
V
BE(sa
t
)
(
V
)
Col
l
e
c
t
or S
a
t
u
ra
t
i
on V
o
l
t
age
V
CE
(
s
a
t
)
(V
)
F
a
ll

Ti
me
t
f
(
s
)
S
t
orageTi
m
e
t
st
g
(
s)
T
u
rn-On T
i
m
e
t
on
(
s)
Pulse test
Pulse test
Data Sheet D14866EJ2V0DS
5
2SA1008
PACKAGE DRAWING (UNIT: mm)
1. Base
2. Collector
3. Emitter
4. Fin (collector)
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