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Datasheet: N16T1630C2BZ2-55 (NanoAmp Solutions)

16Mb Ultra-Low Power Asynchronous CMOS SRAM

 

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NanoAmp Solutions
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N16T1630C2B
(DOC#14-02-007 REV F ECN# 01-1103)
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit
Overview
The N16T1630C2B is an integrated memory
device containing a low power 16 Mbit SRAM built
using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16T1630C2B is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard BGA packages
compatible with other standard 1Mb x 16 SRAMs.
Features
Single Wide Power Supply Range
2.7 to 3.6 Volts
Very low standby current
100A at 3.0V (Max)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Very fast access time
55ns address access option
35ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Green option for BGA package
Pin Configuration (Top View)
Pin Description
Product Family
Part Number
Package
Type
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current (I
SB
),
Max @ 3.0V
Operating
Current (Icc),
Max
N16T1630C2BZ
48 - BGA
-40
o
C to +85
o
C
2.7V - 3.6V
70ns
55ns
100
A
3 mA @ 1MHz
N16T1630C2BZ2 Green 48 - BGA
1
2
3
4
5
6
A
LB
OE
A
0
A
1
A
2
CE2
B
I/O
8
UB
A
3
A
4
CE1
I/O
0
C
I/O
9
I/O
10
A
5
A
6
I/O
1
I/O
2
D
V
SS
I/O
11
A
17
A
7
I/O
3
V
CC
E
V
CC
I/O
12
NC
A
16
I/O
4
V
SS
F
I/O
14
I/O
13
A
14
A
15
I/O
5
I/O
6
G
I/O
15
A
19
A
12
A
13
WE
I/O
7
H
A
18
A
8
A
9
A
10
A
11
NC
48 Ball BGA
6 x 8 mm
Pin Name
Pin Function
A
0
-A
19
Address Inputs
WE
Write Enable Input
CE1, CE2
Chip Enable Input
OE
Output Enable Input
LB
Lower Byte Enable Input
UB
Upper Byte Enable Input
I/O
0
-I/O
15
Data Inputs/Outputs
V
CC
Power
V
SS
Ground
NC
Not Connected
(DOC#14-02-007 REV F ECN# 01-1103)
2
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N16T1630C2B
Functional Block Diagram
Functional Description
CE1
CE2
WE
OE
UB
LB
I/O
0
- I/O
15
1
1. When UB and LB are in select mode (low), I/O
0
- I/O
15
are affected as shown. When LB only is in the select mode only I/O
0
- I/O
7
are affected as shown. When UB is in the select mode only I/O
8
- I/O
15
are affected as shown.
MODE
POWER
H
X
X
X
X
X
High Z
Standby
2
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
Standby
X
L
X
X
X
X
High Z
Standby
2
Standby
L
H
X
X
H
H
High Z
Standby
Standby
L
H
L
X
3
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
L
1
L
1
Data In
Write
Active
L
H
H
L
L
1
L
1
Data Out
Read
Active
L
H
H
H
L
1
L
1
High Z
Active
Active
Capacitance
1
1. These parameters are verified in device characterization and are not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
I/O Capacitance
C
I/O
V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C
8
pF
Address
Inputs
A0 - A19
1M
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
Address
Decode
Logic
Control
Logic
CE1
CE2
WE
OE
UB
LB
I/O0 - I/O7
I/O8 - I/O15
(DOC#14-02-007 REV F ECN# 01-1103)
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N16T1630C2B
Absolute Maximum Ratings
1
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN,OUT
0.3 to V
CC
+0.3
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
0.3 to 4.5
V
Power Dissipation
P
D
500
mW
Storage Temperature
T
STG
40 to 125
o
C
Operating Temperature
T
A
-40 to +85
o
C
Soldering Temperature and Time
T
SOLDER
260
o
C, 10sec
o
C
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ
1
1. Typical values are measured at Vcc=Vcc Typ., T
A
=25C and not 100% tested.
Max
Unit
Supply Voltage
V
CC
2.7
3.0
3.6
V
Input High Voltage
V
IH
2.2
V
CC
+0.3
V
Input Low Voltage
V
IL
0.3
0.6
V
Output High Voltage
V
OH
I
OH
= -0.2mA
V
CC
0.2
V
Output Low Voltage
V
OL
I
OL
= 0.2mA
0.2
V
Input Leakage Current
I
LI
V
IN
= 0 to V
CC
0.5
A
Output Leakage Current
I
LO
OE = V
IH
or Chip Disabled
0.5
A
Read/Write Operating Supply Current
@ 1
s Cycle Time
2
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
I
CC1
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
5.0
mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time
2
I
CC2
V
CC
=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, I
OUT
= 0
25.0
mA
Maximum Standby Current
I
SB1
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, V
CC
= 3.0 V
100.0
A
(DOC#14-02-007 REV F ECN# 01-1103)
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N16T1630C2B
Timing Test Conditions
Output Load Circuit
Item
Input Pulse Level
0.1V
CC
to 0.9 V
CC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 V
CC
Operating Temperature
-40
o
C to +85
o
C
V
CC
30 pF
I/O
14.5K
14.5K
Output Load
(DOC#14-02-007 REV F ECN# 01-1103)
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions, Inc.
N16T1630C2B
Timing
Item
Symbol
-55
-70
Units
Min.
Max.
Min.
Max.
Read Cycle Time
t
RC
55
70
ns
Address Access Time
t
AA
55
70
ns
Chip Enable to Valid Output
t
CO
55
70
ns
Output Enable to Valid Output
t
OE
30
35
ns
Byte Select to Valid Output
t
LB
, t
UB
55
70
ns
Chip Enable to Low-Z output
t
LZ
5
5
ns
Output Enable to Low-Z Output
t
OLZ
5
5
ns
Byte Select to Low-Z Output
t
BLZ
5
5
ns
Chip Disable to High-Z Output
t
HZ
0
25
0
25
ns
Output Disable to High-Z Output
t
OHZ
0
25
0
25
ns
Byte Select Disable to High-Z Output
t
BHZ
0
25
0
25
ns
Output Hold from Address Change
t
OH
10
10
ns
Write Cycle Time
t
WC
55
70
ns
Chip Enable to End of Write
t
CW
50
55
ns
Address Valid to End of Write
t
AW
50
55
ns
Byte Select to End of Write
t
BW
50
55
ns
Write Pulse Width
t
WP
50
55
ns
Address Setup Time
t
AS
0
0
ns
Write Recovery Time
t
WR
0
0
ns
Write to High-Z Output
t
WHZ
25
25
ns
Data to Write Time Overlap
t
DW
25
25
ns
Data Hold from Write Time
t
DH
0
0
ns
End Write to Low-Z Output
t
OW
5
5
ns
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