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Datasheet: 4030B (Micrel Semiconductor)

Tinyfet P-channel Mosfet Preliminary Information

 

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Micrel Semiconductor
MIC94030/94031
Micrel
6
1997
6-41
MIC94030/94031
TinyFETTM P-Channel MOSFET
Preliminary Information
General Description
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a very
small package.
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of typically
0.75
at 4.5V gate-to-source voltage. The MIC94030/1 also
operates with only 2.7V gate-to-source voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET. The
MIC94031 is a variation that includes an internal gate pull-up
resistor that can reduce the system parts count in many
applications.
The 4-terminal SOT-143 package permits a substrate con-
nection separate from the source connection. This 4-terminal
configuration improves the
JA
(improved heat dissipation)
and makes analog switch applications practical.
The small size, low threshold, and low R
DS(on)
make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode or
distributed power management applications.
Features
13.5V minimum drain-to-source breakdown
0.75
typical on-resistance
at 4.5V gate-to-source voltage
0.45
typical on-resistance
at 10V gate-to-source voltage
Operates with 2.7V gate-to-source voltage
Separate substrate connection for added control
Industry's smallest surface mount package
Applications
Distributed power management
PCMCIA card power management
Battery-powered computers, peripherals
Hand-held bar-code scanners
Portable communications equipment
Ordering Information
Part Number
Temperature Range*
Package
MIC94030BM4
55
C to +150
C
SOT-143
MIC94031BM4
55
C to +150
C
SOT-143
* Operating Junction Temperature
Gate
Source
Drain
Substrate
Schematic Symbol
MIC94030
MIC94031
Schematic Symbol
Pin Configuration
SOT-143 Package (M4)
Typical PCB Layout
S
D
G
SS
PCB heat sink
plane improves
heat dissipation
PCB traces
G
S
D
SS
~500k
Internal
gate-to-source
pull-up resistor
G
S
D
SS
Functional Diagrams
Substrate
Source
Gate
Drain
P3x
Part
Identification
Part Number
Identification
MIC94030BM4
P30
MIC94031BM4
P31
Patents 5,355,008; 5,589,702
MIC94030/94031
Micrel
6-42
1997
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition (Note 1)
Min
Typ
Max
Units
V
BDSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
13.5
V
V
GS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.6
1.0
1.4
V
I
GSS
Gate-Body Leakage
V
DS
= 0V, V
GS
= 12V, Note 2, Note 3
1
A
R
GS
Gate-Source Resistor
V
DS
= 0V, V
GS
= 12V, Note 2, Note 4
500
750
1000
k
C
ISS
Input Capacitance
V
GS
= 0V, V
DS
= 12V
100
pF
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 12V, V
GS
= 0V
25
A
V
DS
= 12V, V
GS
= 0V, T
J
= 125
C
0.010
250
A
I
D(ON)
On-State Drain Current
V
DS
= 10V, V
GS
= 10V, Note 5
6.3
A
R
DS(ON)
Drain-Source On-State Resist.
V
GS
= 10V, I
D
= 100mA
0.45
V
GS
= 4.5V, I
D
= 100mA
0.75
1.00
V
GS
= 2.7V, I
D
= 100mA
1.20
g
FS
Forward Transconductance
V
DS
= 10V, I
D
= 200mA, Note 5
480
mS
Note 1
T
A
= 25
C unless noted. Substrate connected to source for all conditions
Note 2
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
Note 3
MIC94030 only
Note 4
MIC94031 only
Note 5
Pulse Test: Pulse Width
80
sec, Duty Cycle
0.5%
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse) .................................... 16V
Gate-to-Source Voltage (pulse) .................................... 16V
Continuous Drain Current
T
A
= 25
C .................................................................... 1A
T
A
= 100
C ............................................................... 0.5A
Operating Junction Temperature ............... 55
C to +150
Storage Temperature ............................... 55
C to +150
C
Total Power Dissipation
T
A
= 25
C ............................................................ 568mW
T
A
= 100
C .......................................................... 227mW
Thermal Resistance
JA ......................................................................................
220
C/W
JC .....................................................................................
130
C/W
Lead Temperature
1/16
" from case, 10s ........................................... +300
C
MIC94030/94031
Micrel
6
1997
6-43
Typical Characteristics
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.0
0.5
1.0
1.5
2.0
R
DS(ON)
(
)
I
D
(A)
On Resistance vs.
Drain Current at 25
C
V
G
= 10V
V
G
= 4.5V
80
s Pulse Test
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.0
0.5
1.0
1.5
2.0
R
DS(ON)
(
)
I
D
(A)
On Resistance vs.
Drain Current at 125
C
V
G
= 10V
V
G
= 4.5V
80
s Pulse Test
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
DRAIN CURRENT (mA)
DRAIN-TO-SOURCE VOLTAGE (V)
Drain Characteristics
2.0V
1.8V
1.6V
1.4V
V
GS
1.2V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
2
4
6
8
10
12
14
DRAIN CURRENT (A)
DRAIN-TO-SOURCE VOLTAGE (V)
Drain Characteristics
5.0V
4.5V
4.0V
3.5V
2.5V
2.0V
1.5V
1.0V
V
GS
300
s Pulse Test
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
DRAIN CURRENT (A)
DRAIN-TO-SOURCE VOLTAGE (V)
Drain Characteristics
V
GS
6V
5V
4V
3V
2V
1V
8V
9V
10V
80
s Pulse Test
MIC94030/94031
Micrel
6-44
1997
Typical Applications
Load
+5V
74HC04
On
Off
* Substrate must be
connected to source
S
SS*
D
G
MIC94030
Figure 1. Power Switch Application
Load
+12V
Open Drain
Output
* Substrate must be
connected to source
S
SS*
D
G
MIC94031
Internal
Resistor
Figure 2. Power Control Application
+12V
74C04
On
Off
* Substrate must be
connected to source
Use "C" version only. "HC"
versions not rated to 12V.
S
SS*
D
G
MIC94030
+8V
74C04
On
Off
S
SS*
D
G
MIC94030
Load
2M
A
B
Output
Off Off
0V
On Off
+12V
Off On
+8V
On On
don't!
A
B
+12V
Figure 3. Analog Switch Application
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