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Datasheet: L2SD2114KLT1 (Leshan Radio Company)

Epitaxial Planar Type Npn Silicon Transistor

 

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Leshan Radio Company
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT11/4
Epitaxial planar type
NPN silicon transistor
Features
1) High DC current gain.
h
FE
= 1200 (Typ.)
2) High emitter-base voltage.
V
EBO
=12V (Min.)
3) Low V
CE (sat).
V
CE (sat)
= 0.18V (Typ.)
(I
C
/ I
B
= 500mA / 20mA)
1
3
2
SOT 23 (TO236AB)
L
2SD2114K*LT1
1
BASE
2
EMITTER
COLLECTOR
3
Absolute maximum ratings (Ta=25
C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
25
V
V
V
A(DC)
W
C
C
20
12
0.5
A(Pulse)
1
0.2
150
-
55
+
150
Symbol
Limits
Unit
Single pulse Pw
=
100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
Min.
25
20
12
-
-
-
-
-
-
-
-
-
-
0.18
350
8.0
-
-
-
0.5
0.5
0.4
-
-
V
I
C
=
10
A
I
C
=
1mA
I
E
=
10
A
V
CB
=
20V
V
EB
=
10V
I
C
/I
B
=
500mA/20mA
V
CE
=
10V, I
E
=-
50mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
h
FE
820
-
2700
V
CE
=
3V, I
C
=
10mA
-
V
MHz
pF
Ron
-
0.8
-
I
B
=
1mA, Vi
=
100mV(rms), f
=
1kHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
h
FE
Values Classification, Device Marking and Ordering Information
Device
h
FE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV
3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW
3000/Tape&Reel
L2SD2114KWLT1G
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
4) Pb-Free package is available.
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1-2/4
Electrical characteristic curves
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
Ta
=
25C
0.2
A
0.4
A
0.6
A
0.8
A
1.0
A
1.2
A
1.4
A
1.6
A
I
B
=
0
1.8
A
2.0
A
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics(
)
0
200
400
600
800
1000
0
2
4
6
8
10
Ta
=
25
C
Measured using
pulse current.
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA 2.0mA
I
B
=
0mA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics(
)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3 Grounded emitter propagation
characteristics
V
CE
=
3V
Measured using
pulse current.
25
C
-
25
C
Ta
=
100
C
1
2
5
10 20
50 100 200 500 1000
10
20
50
100
200
500
1000
2000
5000
10000
Ta
=
25
C
Measured using
pulse current.
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current(
)
3V
V
CE
=
5V
1V
1
2
5
10 20
50 100 200
500 1000
10000
5000
2000
1000
500
200
100
50
20
10
V
CE
=
3V
Measured using
pulse current.
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current(
)
25
C
-
25
C
Ta
=
100
C
1
2
2000
1000
200
500
100
20
50
10
5
2
5
10
20
50 100 200 5001000
Ta
=
25
C
Measured using
pulse current.
10
25
50
I
C
/I
B
=
100
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current(
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
1
2
2000
1000
200
500
100
20
50
10
5
2
5
10
20
50 100 200 5001000
I
C
/I
B
=
25
Measured using
pulse current.
Fig.7 Collector-emitter saturation
voltage vs. collector current(
)
Ta
=
100
C
25
C
-
25
C
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current(
)
1
2
5
10
20
50 100 200
500 1000
10000
5000
2000
1000
500
200
100
50
20
10
Ta
=
25
C
Pulsed
I
C
/I
B
=
10
25
50
100
1
2
5 10
20
50 100 200
5001000
10000
5000
2000
1000
500
200
100
50
20
10
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current(
)
Measured using
pulse current.
l
C
/l
B
=
10
25
C
100
C
Ta
=-
25
C
L2SD2114K*LT1
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1-3/4
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.10 Gain bandwidth product vs.
emitter current
-1
-2
-5 -10 -20
-50 -100 -200 -500 -1000
10000
5000
2000
500
200
1000
100
20
50
10
Ta
=
25
C
V
CE
=
10V
Measured using
pulse current.
0.1 0.2
0.5 1
2
5
10 20
50 100
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
200
500
1000
10
20
50
2
5
1
Ta
=
25
C
f
=
1MHz
I
E
=
0A
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
ON RESISTANCE : Ron
(
)
BASE CURRENT : I
B
(mA)
Fig.12 Output-on resistance vs.
base current
0.1
0.2
0.5
1
2
5
10
20
50
100
Ta=25
C
f=1kHz
Vi=100mV(rms)
R
L
=1k
Ron measurement circuit
Ron
=
R
L
v
0
v
0
v
i
-
v
0
R
L
=
1k
I
B
Output
Input
1kHz
100mV(rms)
v
i
V
L2SD2114K*LT1
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1-4/4
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
0.031
0.8
SOT-23
3
L2SD2114K*LT1
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