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Datasheet: L258 (IXYS Corporation)

Converter - Brake - Inverter Module (cbi1)

 

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IXYS Corporation
2000 IXYS All rights reserved
1 - 8
Rectifier
Brake
Inverter
V
RRM
= 1200V
V
CES
= 600 V
V
CES
= 600 V
I
FAVM
= 11 A
I
C25
= 11 A
I
C25
= 23 A
I
FSM
= 250 A
V
CE(sat)
= 2 V
V
CE(sat)
= 2.1 V
MUBW 20-06 A6
Converter - Brake - Inverter Module (CBI1)
Features
q
NPT IGBT technology
Square RBSOA, no latchup
q
Free wheeling diodes with Hiperfast
and soft recovery behaviour
q
Isolation voltage 2500 V~
q
Built in temperature sense
q
High level of integration:
one module for complete drive
system
q
Direct Copper Bonded Al
2
O
3
ceramic
base plate
Applications
q
AC motor control
q
AC servo and robot drives
Advantages
q
No need of external isolation
q
Easy to mount with two screws
q
Package designed for wave
soldering
q
High temperature and power cycling
capability
Input Rectifier Bridge D8 - D13
Symbol
Conditions
Maximum Ratings
V
RRM
1200
V
I
F
T
VJ
= 25C
36
A
I
FAVM
T
VJ
= 150C; T
K
= 70C
11
A
I
FSM
T
VJ
= 45C; t = 10 ms sine 50 Hz
250
A
it
T
VJ
= 125C
310
As
T
VJ
+150
C
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
I
R
V
RRM
= 1200 V; T
VJ
= 25C
10
A
T
VJ
= 125C
3
mA
V
F
I
F
= 36 A
1.15
1.4
V
R
thJC
per die
1.4
C/W
031
IXYS reserves the right to change limits, test conditions and dimensions.
2000 IXYS All rights reserved
2 - 8
Output Inverter T1 - T6, D1 - D6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C
600
V
V
CGR
T
VJ
= 25C; R
GE
= 20k
W
600
V
V
GE
T
VJ
= 25C
20
V
I
C
T
C
= 25C
23
A
T
C
= 90C
13
A
I
CM
t
p
= 1 ms = 1% duty cycle;
T
C
= 25C
46
A
T
C
= 90C
26
A
t
SC
IGBT V
CE
= 600 V; T
VJ
= 125C
non-repetitive
10
s
P
tot
T
C
= 25C
68
W
T
VJ
Free-Wheeling Diode
+150
C
T
VJ
IGBT
+150
C
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
I
CES
V
GE
= 0 V; V
CE
= 600 V
1
mA
I
GES
V
CE
= 0 V; V
GE
= 25 V
100
nA
V
GE(th)
V
GE
= V
CE
; I
C
= 0.4 mA
4.5
5.5
6.5
V
V
(BR)CES
V
GE
= 0 V; I
C
= 10 mA; T
VJ
= -40C
600
V
V
CE(sat)
V
GE
= 15 V; I
C
= 15 A; T
VJ
= 25C
2.1
2.5
V
T
VJ
= 125C
2.4
2.8
V
t
f
25
ns
t
r
25
ns
t
d(on)
30
ns
t
d(off)
200
ns
E
off
0.5
mJ
E
on
0.7
mJ
C
iss
800
pF
C
oss
85
pF
C
rss
52
pF
g
fs
V
CE
= 20 V; I
C
= 15 A
4.5
S
Q
g
V
CC
= 300 V; I
C
= 15 A pulse; V
GE
= 15 V
59
n
C
V
F
I
F
= 15 A; V
GE
= 0 V; T
VJ
= 25C
2
V
T
VJ
= 125C
1.8
V
t
rr
I
F
= 15 A; V
R
= -300 V; T
VJ
= 125C
0.25
s
di
F
/dt = -500 A/s; V
GE
= 0 V
Q
r
I
F
= 15 A; V
R
= -300 V;
T
VJ
= 25C
0.4
C
di
F
/dt = -500 A/s; V
GE
= 0 V; T
VJ
= 125C
1.3
C
I
r
250
A
R
thJC
IGBT
(per die)
1.5
C/W
Diode
(per die)
2.0
C/W
Inductive load, T
VJ
= 125C
V
CC
= 300 V; I
C
= 15 A
R
G
= 68
W
; V
GE
= 15 V
V
GE
= 0 V
V
CE
= 25 V
f = 1 MHz
MUBW 20-06 A6
2000 IXYS All rights reserved
3 - 8
MUBW 20-06 A6
Brake Chopper T7, D7
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C
600
V
V
CGR
T
VJ
= 25C; R
GE
= 20k
W
600
V
V
GE
T
VJ
= 25C
20
V
I
C
T
C
= 25C
11
A
T
C
= 90C
8
A
I
CM
t
p
= 1 ms = 1% duty cycle;
T
C
= 25C
22
A
T
C
= 90C
16
A
t
SC
IGBT V
CE
= 600 V; T
VJ
= 125C
non-repetitive
10
s
P
tot
T
C
= 25C
45
W
T
VJ
Free-Wheeling Diode
+150
C
T
VJ
IGBT
+150
C
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
I
CES
V
GE
= 0 V; V
CE
= 600 V
20
A
I
GES
V
CE
= 0 V; V
GE
= 25 V
100
nA
V
GE(th)
V
GE
= V
CE
; I
C
= 0.5 mA
3
4
5
V
V
(BR)CES
V
GE
= 0 V; I
C
= 0.5 mA; T
VJ
= -40C
600
V
V
CE(sat)
V
GE
= 15 V; I
C
= 6 A; T
VJ
= 25C
2
2.5
V
T
VJ
= 150C
2.3
2.8
V
t
f
75
110
ns
t
r
30
45
ns
t
d(on)
50
80
ns
t
d(off)
250
375
ns
E
off
0.21
mJ
E
on
0.25
mJ
C
iss
350
435
pF
C
oss
40
50
pF
C
rss
25
30
pF
g
fs
V
CE
= 20 V; I
C
= 6 A
4.2
S
Q
g
V
CC
= 400 V; I
C
= 6 A pulse; V
GE
= 15 V
32.5
n
C
V
F
I
F
= 10 A; V
GE
= 0 V; T
VJ
= 25C
2
V
T
VJ
= 150C
1.8
V
t
rr
I
F
= 10 A; V
R
= -300 V; V
GE
= 0 V
0.2
s
di
F
/dt = -350 A/s; T
VJ
= 150C
Q
r
I
F
= 10 A; V
R
= -300 V;
T
VJ
= 25C
0.3
C
di
F
/dt = -350 A/s; V
GE
= 0 V; T
VJ
= 125C
0.9
C
I
r
250
A
R
thJC
IGBT
(per die)
2.3
C/W
Diode
(per die)
2.3
C/W
Inductive load, T
VJ
= 150C
V
CC
= 400 V; I
C
= 6 A
R
G
= 50
W
; V
GE
= 15 V
V
GE
= 0 V
V
CE
= 25 V
f = 1 MHz
2000 IXYS All rights reserved
4 - 8
MUBW 20-06 A6
Module
Symbol
Conditions
Maximum Ratings
T
stg
-40...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz; t = 1 min
2500
V~
M
d
Mounting torque (M4)
2.0 - 2.2
Nm
18 - 20
lb.in.
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance in air
12.7
mm
Weight
typ.
42
g
Temperature Sensor R
Symbol
Conditions
Maximum Ratings
R
T
amb
= 20C
4.7
k
W
For additional data see C620/4.7k 5% S+M NTC thermistor catalog
Dimensions in mm (1 mm = 0.0394")
21.1 0.5
17.1 0.3
3.4 0.1
5.7 0.3
57.3-0.3
5.5+0.2
4.3+0.2
2000 IXYS All rights reserved
5 - 8
MUBW 20-06 A6
10
-3
10
-2
10
-1
10
0
10
1
0
50
100
150
200
250
300
2
3
4
5 6 7 8 9
1
10
200
400
600
800
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
10
20
30
40
50
I
2
t
I
FSM
A
I
F
A
V
F
t
s
t
ms
A
2
s
V
Forward characteristics
Surge overload current
I
FSM
: crest value, t: duration
I
2
t versus time (1-10 ms)
typ. lim.
T
VJ
= 180C
T
VJ
= 25C
50Hz, 80%V
RRM
T
VJ
= 45C
T
VJ
= 180C
V
R
= 0 V
T
VJ
=45C
T
VJ
=180C
Input Rectifier Bridge D8 - D13
Transient thermal resistance junction to heatsink
(Z
thJH
is measured using 50 m
thermal grease)
Z
thJH
[K/W]
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t (s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
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