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Datasheet: F50N06LE (Intersil Corporation)

50a, 60v, 0.022 Ohm, Logic Level N-channel Power Mosfets

 

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Intersil Corporation
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
50A, 60V, 0.022 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49164.
Features
50A, 60V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06LE
TO-247
FG50N06L
RFP50N06LE
TO-220AB
FP50N06L
RF1S50N06LESM
TO-263AB
F50N06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4072.3
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N06LE, RFP50N06LE,
RF1S50N06LESM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
50
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
142
0.95
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, Figure 13
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, Figure 12
1
-
3
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
-
-
1
A
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
10
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 50A, V
GS
= 5V, Figure 11
-
-
0.022
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 50A,
R
L
= 0.6
, V
GS
= 5V,
R
GS
= 2.5
Figures 10, 18, 19
-
-
230
ns
Turn-On Delay Time
t
d(ON)
-
20
-
ns
Rise Time
t
r
-
170
-
ns
Turn-Off Delay Time
t
d(OFF)
-
48
-
ns
Fall Time
t
f
-
90
-
ns
Turn-Off Time
t
OFF
-
-
165
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 48V,
I
D
= 50A,
R
L
= 0.96
Figures 21, 21
-
96
120
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
57
70
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
2.2
2.7
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Figure 14
-
2100
-
pF
Output Capacitance
C
OSS
-
600
-
pF
Reverse Transfer Capacitance
C
RSS
-
230
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.05
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-247
-
-
30
o
C/W
TO-220AB and TO-263AB
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 45A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 45A, dI
SD
/dt = 100A/
s
-
-
125
ns
NOTES:
2. Pulse test: pulse width
80
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
30
50
40
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
175
60
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
2
0.1
1
10
-4
10
1
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1
100
10
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
s
10ms
1ms
500
200
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
1000
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
, PEAK CURRENT CAP
ABILITY (A)
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
4
NOTE:
Refer to Intersil Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
100
1
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
1
10
100
0.01
0.1
300
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
25
75
0
1.5
3.0
4.5
6.0
50
100
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 5V
V
GS
= 10V
V
GS
= 2.5V
V
GS
= 4V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
3.0
4.5
6.0
1.5
0
25
50
75
100
175
o
C
I
DS(ON)
,
DRAIN T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
20
40
60
80
0
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN T
O
SOURCE
2.0
I
D
= 100A
3.5
4.5
5.0
I
D
= 50A
I
D
= 12.5A
I
D
= 25A
4.0
2.5
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
ON RESIST
ANCE (m
)
200
20
30
40
50
0
500
400
300
100
0
10
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
600
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
= 30V, I
D
= 50A, R
L
= 0.6
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
200
ON RESIST
ANCE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 50A
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.0
1.0
0.5
0
1.5
V
GS
= V
DS
, I
D
= 250
A
1.2
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
200
1.1
I
D
= 250
A
2500
2000
1000
0
0
5
10
15
20
25
C, CAP
A
CIT
ANCE (pF)
C
RSS
1500
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
500
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
60
45
30
15
0
20
I
G REF
(
)
I
G ACT
(
)
----------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
----------------------
5.0
3.75
2.5
1.25
0
V
DS
,
DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
,
GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
R
L
=1.2
I
G(REF)
= 1.2mA
V
GS
= 5V
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
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