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Datasheet: 2N6977 (Intersil Corporation)

5A, 400V and 500V N-Channel IGBTs

 

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Intersil Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
Harris Corporation 1995
3-1
Semiconductor
Package
JEDEC TO-204AA
BOTTOM VIEW
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
2N6975
TO-204AA
2N6976
TO-204AA
2N6977
TO-204AA
2N6978
TO-204AA
NOTE: When ordering, use the entire part number.
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Features
5A, 400V and 500V
V
CE(ON)
2V
T
FI
1
s, 0.5
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
April 1995
2N6975, 2N6976,
2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified.
2N6975/2N6977
(Note 1)
2N6976/2N6978
(Note 1)
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
400
500
V
Collector-Gate Voltage (R
GE
= 1M
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CGR
400
500
V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CES(REV.)
5
5
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GE
20
20
V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
5
5
A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
10
10
A
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
100
100
W
Power Dissipation Derating T
C
> +25
o
C
0.8
0.8
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150
-55 to +150
o
C
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
File Number
2297.2
3-2
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
2N6975/2N6977
2N6976/2N6978
MIN
MAX
MIN
MAX
Collector-Emitter
Breakdown Voltage
BV
CES
l
C
= 1 mA, V
GE
= 0
400
(Note 1)
-
500
(Note 1)
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2
(Note 1)
4.5
(Note 1)
2
(Note 1)
4.5
(Note 1)
V
Zero Gate Voltage Collector
Current
l
CES
V
CE
= 400V
-
250
(Note 1)
-
-
A
V
CE
= 500V
-
-
-
250
(Note 1)
A
T
C
= +125
o
C
-
-
-
-
A
V
CE
= 400V
-
1000
(Note 1)
-
-
A
V
CE
= 500V
-
-
-
1000
(Note 1)
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0V
-
100
(Note 1)
-
100
(Note 1)
ns
Reverse Collector-Emitter
Leakage Current
I
ECS
R
GE
= 0
, V
EC
= 5V
-
5
(Note 1)
-
5
(Note 1)
mA
Collector-Emitter On Voltage
V
CE(ON)
I
C
= 5A, V
GE
= 10V
-
2
(Note 1)
-
2
(Note 1)
V
I
C
= 10A, V
GE
= 20V
-
2.5
-
2.5
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
3.4
(Note 1)
6.8
(Note 1)
3.4
(Note 1)
6.8
(Note 1)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
12
(Note 1)
25
(Note 1)
12
(Note 1)
25
(Note 1)
nC
Turn-On Delay Time
t
D(ON)
I
C
= 5A
V
CE(CLP)
= 300V
L = 50
H
T
J
= +125
o
C
V
GE
= 10V
R
G
= 50
50 Max
ns
Rise Time
t
R
50 Max
ns
Turn-Off Delay Time
t
D(ON)
400 Max
(Note 1)
ns
Fall Time
t
FI
2N6975
2N6976
1000 Max
(Note 1)
ns
2N6977
2N6978
500 Max
(Note 1)
ns
Turn-Off
Energy Loss per Cycle
(Off Switching Dissipation=
W
OFF
x Frequency)
W
OFF
I
C
= 5A
V
CE(CLP)
= 300V
L = 50
H
T
J
= +125
o
C
V
GE
= 10V
R
G
= 50
2N6975
2N6976
1000 Max
(Note 1)
J
2N6977
2N6978
500 Max
(Note 1)
J
Thermal Resistance
Junction-to-Case
R
JC
1.25
(Note 1)
o
C/W
NOTE:
1. JEDEC registered value.
3-3
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE
AS A FUNCTION OF JUNCTION TEMPERATURE FOR
ALL TYPES
FIGURE 2. NORMALIZED THERMAL RESPONSE
CHARACTERISTICS FOR ALL TYPES
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL
TYPES
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR
ALL TYPES
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT FOR
ALL TYPES
FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR-
TO-EMITTER VOLTAGE FOR ALL TYPES
T
C
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE THRESHOLD
V
GE
= V
CE
I
C
= 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
VOL
T
AGE
t, TIME (ms)
10
1.0
0.1
0.01
0.01
0.1
1.0
10
100
1000
Z
JC
(t) = r(t)R
JC
D CURVES APPLY FOR POWER PULSE
TRAIN SHOWN READ TIME AT t1
T
J(PEAK)
- T
C
= P
(PEAK)
Z
JC
(t)
SINGLE PULSE
D = 0.05
D = 0.2
D = 0.5
EFFECTIVE TRANSIENT THERMAL
IMPEDANCE (NORMALIZED)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR CURRENT (A)
10
7.5
5.0
2.5
0
0
2.5
7.5
5.0
10
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
+25
o
C
+125
o
C
-40
o
C
T
C
= +25
o
C
V
GE
= +6V
V
GE
= +5V
V
GE
= +4V
V
GE
= +10V
V
GE
= +8V
V
GE
= +7V
10
7.5
5.0
2.5
0
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR CURRENT (A)
PULSE TEST
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GE
= 10V
I
CE
, COLLECT
OR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1200
1000
800
600
400
200
0
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C, CAP
ACIT
ANCE (pF)
f = 0.1MHz
CRSS
CISS
COSS
3-4
2N6975, 2N6976, 2N6977, 2N6978
FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
P
D
: ALLOWABLE DISSIPATION
P
C
: CONDUCTION DISSIPATION
FIGURE 8. MAXIMUM OPERATING FREQUENCY vs
COLLECTOR CURRENT (TYPICAL)
FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT
(REFER TO APPLICATION NOTES AN7254 AND AN7260)
FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
V
GE
V
CE
W
OFF
=
I
C
* V
CE
dt
I
C
f
OP
, MAXIMUM OPERA
TING FREQUENCY (kHz)
I
CE
, COLLECTOR CURRENT (A)
T
C
=
o
C 100
f
MAX2
= (P
D
- P
C
)/W
OFF
2N6975
V
GE
= 10V
R
G
= 50
R
L
= 300/ce
L = 50
H
V
CC
= 300V
T
J
= +150
o
C
f
MAX1
= 0.05/t
D(OFF)
140
120
100
80
60
40
20
1
2
3
4
5
6
7
8
9
10
100
90
2N6976
2N6977
2N6978
TIME (
s)
500
375
250
125
0
10
8
6
4
0
2
I
G
(REF)
I
G
(ACT)
20
I
G
(REF)
I
G
(ACT)
80
COLLECTOR-EMITTER VOLTAGE
V
CC
= BV
CES
GATE
EMITTER
VOLTAGE
R
L
= 100
I
G
(REF) = 0.43mA
V
GE
= 10V
V
CC
= BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
0.75 BV
CES
0.50 BV
CES
0.25 BV
CES
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
20V
0V
R
GEN
= 100
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 100
L = 50
H
V
CC
300V
+
R
L
-
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