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Datasheet: C3015 (IMP, Inc.)

Cmos 3um Digital

 

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IMP, Inc.
89
IMP, Inc.
Process C3015
CMOS 3
m
Digital
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
N-Channel Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Threshold Voltage
VT
N
0.6
0.8
1.0
V
100x3
m
Body Factor
N
0.6
V
1/2
100x3
m
Conduction Factor
N
42
47
52
A/V
2
100x100
m
Effective Channel Length
Leff
N
2.85
3.2
3.55
m
100x3
m
Width Encroachment
W
N
0.7
m
Per side
Punch Through Voltage
BVDSS
N
12
V
Poly Field Threshold Voltage
VTF
P(N)
12
V
P-Channel Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Threshold Voltage
VT
P
0.6
0.8
1.0
V
100x3
m
Body Factor
P
0.55
V
1/2
100x3
m
Conduction Factor
P
13
15
19
A/V
2
100x100
m
Effective Channel Length
Leff
P
2.85
3.2
3.55
m
100x3
m
Width Encroachment
W
P
0.9
m
Per side
Punch Through Voltage
BVDSS
P
12
V
Poly Field Threshold Voltage
VTF
P(P)
12
V
Diffusion & Thin Films
Symbol
Minimum
Typical
Maximum
Unit
Comments
Well (field) Sheet Resistance
P-well(f)
3.2
4.8
6.5
K
/
P-well
N+ Sheet Resistance
N+
16
21
27
/
N+ Junction Depth
x
jN+
0.8
m
P+ Sheet Resistance
P+
50
80
100
/
P+ Junction Depth
x
jP+
0.7
m
Gate Oxide Thickness
T
GOX
37.5
40.0
42.5
nm
Gate Poly Sheet Resistance
POLY1
15
22
30
/
Metal-1 Sheet Resistance
M1
30
60
m
/
Passivation Thickness
T
PASS
200+900 nm
oxide+nit.
Capacitance
Symbol
Minimum
Typical
Maximum
Unit
Comments
Gate Oxide
C
OX
0.66
0.72
0.78
fF/
m
2
Metal-1 to Poly-1
C
M1P
0.0523
fF/
m
2
Metal-1 to Silicon
C
M1S
0.026
0.030
0.034
fF/
m
2
90
C3015-4-98
Process C3015
Starting Material
N <100>
N+/P+ Width/Space
3.0 / 3.0
m
Starting Mat. Resistivity
15 - 25
-cm
N+ To P+ Space
12
m
Typ. Operating Voltage
5V
Contact To Poly Space
2.5
m
Well Type
P-well
Contact Overlap Of Diffusion
1.5
m
Metal Layers
1
Contact Overlap Of Poly
1.0
m
Poly Layers
1
Metal-1 Overlap Of Contact
1.0
m
Contact Size
2.0x2.0
m
Minimum Pad Opening
100x100
m
Metal-1 Width/Space
3.5 / 2.5
m
Minimum Pad-to-Pad Spacing
5.0
m
Gate Poly Width/Space
3.0 / 2.5
m
Minimum Pad Pitch
80.0
m
Special Feature of C3015 Process: 3
m P-well digital process.
Physical Characteristics
0
5
0
5
Drain Current (mA) I
DS
Drain Voltage (v), V
DS
4
3
2
1
1
2
3
4
ID vs VD, W/L = 20/4.0
n-ch Transistor IV Characteristics of a 20/4.0 device
V
GS
= 2.0V
V
GS
= 10V
V
GS
= 8.0V
V
GS
= 7.0V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 9.0V
6
7
8
9
10
Drain Current (mA) I
DS
Drain Voltage (v) V
DS
0
5
0
3
2.5
2
1
.5
1
2
3
4
ID vs VD, W/L = 20/4.0
p-ch Transistor Characteristics of a 20/4.0 device
1.5
6
7
8
9
10
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 2.0V
V
GS
= 6.0V
V
GS
= 7.0V
V
GS
= 8.0V
V
GS
= 9.0V
V
GS
= 10V
V
GS
= 5.0V
Cross-sectional view of the C3015 process
Second metal
SIO
2
LTO
p
+
p
+
p
+
n
+
p
Field Oxide
p-well contact
Drain
Poly gate
p-well
source
Drain
Source
N
substrate contact
Sidewall spacer
Bottom poly
Contact
Poly gate
N
+
substrate
n
+
n
+
A1
p
p
SIO
2
n-epi
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