HTML datasheet архив (поиск документации на электронные компоненты) Поиск даташита (1.687.043 компонентов)
Где искать

Datasheet: GM71C17800C-7 (Hynix Semiconductor)

2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM

 

Скачать: PDF   ZIP
Hynix Semiconductor
T h e G M 7 1 C ( S ) 1 7 8 0 0 C / C L i s t h e n e w
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
M u l t i p l e x e d a d d r e s s i n p u t s p e r m i t t h e
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.
Description
Features
* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)
Pin Configuration
2,097,152 WORDS x 8 BIT
CMOS DYNAMIC RAM
28 SOJ
(Top View)
V
SS
I/O0
I/O1
I/O2
I/O3
1
2
3
4
5
WE
RAS
A10
A0
A1
7
8
9
10
11
6
A2
A3
V
CC
12
13
14
V
SS
I/O7
I/O6
I/O5
I/O4
24
25
26
27
28
OE
A8
A7
A6
18
19
20
21
22
CAS
23
A5
A4
V
SS
15
16
17
NC
A9
28 TSOP II
V
SS
I/O0
I/O1
I/O2
I/O3
1
2
3
4
5
WE
RAS
A10
A0
A1
7
8
9
10
11
6
A2
A3
V
CC
12
13
14
V
SS
I/O7
I/O6
I/O5
I/O4
24
25
26
27
28
OE
NC
A8
A7
A6
18
19
20
21
22
CAS
23
A5
A4
V
SS
15
16
17
A9
GM71C(S)17800C/CL-5
GM71C(S)17800C/CL-6
GM71C(S)17800C/CL-7
t
RAC
t
CAC
t
RC
t
PC
50
60
13
15
90
110
35
40
70
18
130
45
GM71C17800C
GM71CS17800CL
Rev 0.1 / Apr'01
GM71C17800C
GM71CS17800CL
Rev 0.1 / Apr'01
Pin Description
Pin
Function
Pin
Function
A0-A10
A0-A10
I/O0-I/O7
RAS
WE
V
CC
V
SS
NC
Address Inputs
Refresh Address Inputs
Data-In/Out
Row Address Strobe
Read/Write Enable
Power (+5V)
Ground
No Connection
Ordering Information
CAS
Column Address Strobe
OE
Output Enable
Absolute Maximum Ratings*
P
T
1.0
Power Dissipation
W
Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Symbol
Parameter
Rating
Unit
T
A
T
STG
V
IN/OUT
V
CC
I
OUT
0 ~
+
70
-55 ~
+
125
50
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to V
SS
Voltage on V
CC
Relative to V
SS
Short Circuit Output Current
C
C
V
V
mA
-1.0 ~
+
7.0V
-1.0 ~
+
7.0V
Recommended DC Operating Conditions (T
A
= 0 ~
+
70C)
Symbol
Parameter
Unit
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
Max
5.5
6.0
0.8
Typ
5.0
-
-
Min
4.5
2.4
-1.0
Note: All voltage referred to Vss.
Type No.
Access Time
Package
GM71C(S)17800CJ/CLJ -5
GM71C(S)17800CJ/CLJ -6
GM71C(S)17800CJ/CLJ -7
50ns
60ns
70ns
400 Mil
28 Pin
Plastic SOJ
50ns
60ns
70ns
400 Mil
28 Pin
Plastic TSOP II
GM71C(S)17800CT/CLT -5
GM71C(S)17800CT/CLT -6
GM71C(S)17800CT/CLT -7
GM71C17800C
GM71CS17800CL
Rev 0.1 / Apr'01
DC Electrical Characteristics (V
CC
= 5V+/-10%, Vss = 0V, T
A
= 0 ~ 70C)
Symbol
Parameter
Note
V
OH
V
OL
Output Level
Output "H" Level Voltage (I
OUT
=
-5mA
)
Unit
Max
V
CC
0.4
Min
2.4
0
Output Level
Output "L" Level Voltage (I
OUT
=
4.
2mA)
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling
:
t
RC
=
t
RC
min)
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
IH
,
D
OUT
=
High-Z)
2
-
I
CC3
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(t
RC
=
t
RC
min)
I
CC4
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= V
CC
- 0.2V, Dout = High-Z)
1
-
I
CC6
CAS-before-RAS Refresh Current
(t
RC
=
t
RC
min)
150
-
I
L(I)
10
-10
I
L(O)
10
-10
Input Leakage Current
Any Input (0V
<=
V
IN
<=
6V)
Output Leakage Current
(D
OUT
is Disabled, 0V
<=
V
OUT
<=
6V)
Note: 1. I
CC
depends on output load condition when the device is selected.
I
CC
(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L-version.
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(t
PC
= t
PC
min)
110
-
50ns
60ns
70ns
100
90
-
-
-
110
-
50ns
60ns
70ns
100
90
-
-
100
-
50ns
60ns
70ns
90
85
-
110
-
50ns
60ns
70ns
-
-
100
90
I
CC7
I
CC8
V
V
mA
mA
uA
uA
uA
mA
1, 2
mA
2
mA
1, 3
mA
5
-
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
=
Enable
mA
1
Battery Back Up Operating Current
(Standby with CBR Refresh)
(t
RC
=62.5us
,
t
RAS
<=
0.3
us,
D
OUT
=
High-Z)
500
-
4,5
uA
I
CC9
uA
Self-Refresh Mode Current
(RAS, CAS<=0.2V
,
D
OUT
=
High-Z)
300
-
5
5
GM71C17800C
GM71CS17800CL
Rev 0.1 / Apr'01
Capacitance (V
CC
= 5V+/-10%, T
A
= 25C)
Symbol
Parameter
Note
C
I1
C
I2
C
I/O
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
1
1
1, 2
Unit
pF
pF
pF
Max
5
7
7
Min
-
-
-
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
AC Characteristics (V
CC
= 5V+/-10%, T
A
= 0 ~
+
70C, Vss = 0V, Note 1, 2, 18)
Test Conditions
Input rise and fall times : 5 ns
Output timing reference levels : 0.4V, 2.4V
Input timing reference levels : 0.8V, 2.4V
Output load : 2TTL gate + C
L
(100 pF)
(Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RC
Random Read or Write Cycle Time
90
-
110
-
130
-
t
RP
RAS Precharge Time
30
-
40
-
50
-
t
RAS
RAS Pulse Width
50
10,000
60
10,000
70
10,000
t
CAS
CAS Pulse Width
10,000
10,000
10,000
15
18
t
ASR
Row Address Set up Time
0
-
-
-
0
0
t
RAH
Row Address Hold Time
7
-
-
-
10
10
t
ASC
Column Address Set-up Time
0
-
-
-
0
0
t
CAH
Column Address Hold Time
-
-
-
10
15
t
RCD
RAS to CAS Delay Time
17
45
45
52
20
20
3
t
RAD
RAS to Column Address Delay Time
12
30
30
35
15
15
4
t
RSH
RAS Hold Time
13
-
-
-
15
18
t
CSH
CAS Hold Time
50
-
-
-
60
70
t
CRP
CAS to RAS Precharge Time
5
-
-
-
5
5
t
T
Transition Time (Rise and Fall)
3
50
50
50
3
3
7
t
DZO
OE Delay Time from D
IN
0
-
-
-
0
0
t
DZC
CAS Delay Time from D
IN
0
-
-
-
0
0
GM71C(S)17800
C/CL-5
OE to D
IN
Delay Time
13
-
-
-
15
18
5
6
6
t
CP
CAS Precharge Time
7
-
10
-
10
-
t
ODD
GM71C(S)17800
C/CL-6
GM71C(S)17800
C/CL-7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13
7
GM71C17800C
GM71CS17800CL
Rev 0.1 / Apr'01
Read Cycle
Write Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
t
RAC
-
60
-
70
t
CAC
-
15
-
18
t
AA
-
30
-
35
t
RCS
0
-
0
-
t
RCH
0
-
-
0
-
15
-
18
GM71C(S)17800
C/CL-6
t
OAC
GM71C(S)17800
C/CL-7
t
RRH
5
-
-
5
t
RAL
30
-
-
35
t
OFF
15
15
-
-
t
CAL
30
-
-
35
t
CLZ
0
-
-
0
t
OEZ
15
15
-
-
t
OH
3
-
-
3
t
OHO
3
-
-
3
t
CDD
15
-
-
18
Access Time from RAS
Access Time from CAS
Access Time from Address
Read Command Setup Time
Read Command Hold Time to CAS
Access Time from OE
Column Address to RAS Lead Time
Read Command Hold Time to RAS
Output Buffer Turn-off Time
Column Address to CAS Lead Time
CAS to Output in Low-Z
Output Buffer Turn-off Time to OE
Output Data Hold Time
Output Data Hold Time from OE
CAS to D
IN
Delay Time
Max
Min
-
50
-
13
-
25
0
-
0
-
-
13
GM71C(S)17800
C/CL-5
5
-
25
-
13
-
25
-
0
-
13
-
3
-
3
-
13
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
Parameter
Note
Max
Unit
Min
t
WCS
0
-
t
WCH
10
-
t
WP
10
-
t
RWL
15
-
t
CWL
15
-
t
DS
0
-
t
DH
10
-
Max
Min
0
-
15
-
10
-
18
-
-
18
-
0
-
15
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
8,9
9,10,17
9,11,17
9
12
12
13
13
5
15
15
14
GM71C(S)17800
C/CL-6
GM71C(S)17800
C/CL-7
ns
Min
0
-
-
7
-
-
-
0
-
-
Max
GM71C(S)17800
C/CL-5
ns
ns
ns
ns
ns
ns
7
13
13
7
© 2018 • ChipFind
Контакты
Главная страница