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Datasheet: GL3276 (Hynix Semiconductor)

Less Changes Of Malfunction Associated WithA High-frequency Lighting Fluorscent Lamp Internal Trap Circuit.

 

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Hynix Semiconductor
GL3276A


1
GL3276A

Description
The GL3276A is a bipolar analog ICs specifically
developed for use in infrared remote control system
receiving preamplifiers. Capable of accepting a
photodiode directly, these ICs house a high gain
initial amplifier, a limiter, a band-pass filter, a
detection circuit and a waveform shaping circuit
assembled on a single chip.
Features
Less changes of malfunction associated with
a high-frequency lighting fluorscent lamp
internal trap circuit.
The central frequency can be varied with an
external resistance:
fo=30 to 80KHz
fo rimming reduce central frequency variance.
Few external parts.
Internal pull-up resistance and power filter
resistance.
Lower-capacitance external capacitor
Open collector output
Open collector output with a pull-up resistance.
Pin configuration




















Block Diagram


















GL3276A
(SOP)
IN+
8
IN-
7
C
D
6
GND
5
fo
4
V
CC2
3
Out
2
V
CC1
1
Detector
ABLC
4
3
1
2
20
7
5
20
BPF
+
TRAP
Limiter
Waveform
shaper
Initial
Stage
amplifier
f
0
V
CC2
R
S
R
L
V
CC1
C
D
GND
IN-
IN+
C
2
C
1
R
1
OUT
OUTPUT
GL3276A


2
Absolute Maximum Ratings(Ta=25
)
SYMBOL
PARAMETER
VALUE
UNIT
V
CC
Supply voltage
6.0
V
I
OUT
Output Current
2.5
mA
P
D
Allowable power
dissipation
270
mW
T
OPR
Operating temperature
- 20 to +75
T
STG
Storage temperature
-40 to +125
Recommended Operating Condition
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
V
CC
Supply voltage
4.5
5.0
5.5
V
f
IN
Input frequency
30
38
80
KHz
Electrical characteristics (VCC = 5.0V, Ta = 2.5
)
SYMBOL
PARAMETER
TEST CONDITION
MIN TYP MAX UNIT REMARK
I
CC
Supply current
1.2
2.8
mA
V
IN
Input voltage
I
IN
= 0A
I
IN
=-330
A
2.0
0.6
2.5
0.8
3.1
1.7
V
A
V
Voltage gain
f
IN
=38kHz
V
IN
=30
V
P-P
70
76
80 dB
F
BW
BPF bandwidth
-3dB Bandwidth
V
IN
=30
V
P-P
2.0
2.5
3.0
KHz
r
IN
Input impedance
f
IN
=38kHz CW
V
IN
=0.2
V
P-P
80
110
160
K
note
*
1
t
PW1
f
IN
=38kHz
burstwave
V
IN
=500
V
P-P
440
770
S
t
PW2
Output pulse width
f
IN
=38kHz
burstwave
V
IN
=50mV
P-P
440
770
S
note
*
1
V
OL
Low Level
output voltage
0.2
0.4
V
V
OH
Low Level
output voltage
4.8
5.0
V
Note 1 : r
IN
=
1
)
V
V
(
47
X
IN
K
(where V
IN
=input level, V
X
=test value)
2 : input burst
wave form

output pulse

600
S
600
S
38KHz Carrier
GL3276A


3
Pin Description
NO. SYMBOL
PIN FUNCTION
1
V
CC1
Power input
3
V
CC2
Power output
5
GND
Ground
Apply a voltage of 5V 10 % to pin 1.
As the power is output to pin 3 through the internal
power filter resistance, connect an electrolytic
capacitor to pin 3.
8
IN +
Input
With an internal impedance of 110 K (typ.) pin 8
can accept a PIN photodiode directly. An automatic
bias level control (ABLC) circuit prevents the input
from being saturated by external light,
assuring bias level stability for the input pin.
7
IN -
Initial amplifier
Gain setup
Initial amplifier differential inverted output. Its gain
can be set up with an external impedance.
4
f
o
BPF
frequency
setup
The central frequency of the band-pass filter can be
varied with an external resistance. A built-in trap
circuit prevents malfunctions associated with a high-
frequency lighting fluorescent lamp.
6
C
D
Detection
capacitor
Pin to which a detection capacitor is connected.
2
OUT
Output
Open collector output with pull-up resistance.
Its capability to drive a CMOS or TTL makes for easy
connection with a receiving microcomputer.
The GL3276A has an active low output.


Sample Application Circuits
8 Pin Plastic
SOP
Photo diode
IN + IN - C
D
GND
GL3276A
V
CC1
OUT V
CC2
f
0
1
2
3
4
8
7
6
5
Power
supply
Output
47
F
130 k
(R
2
)
1500pF
0.01
F
C1
R1
0 to 1k
GL3276A


4
Typical Characteristics (T
A
= 25
)













































Supply Current vs. Supply Voltage
I
CC
-
Supply Current
-
mA
V
CC
-Supply Voltage
2.5 3 3.5 4 4.5 5 5.5 6.5
2.5
2
1.5
1
0.5
Voltage Gain vs. Input Frequency
V
-
V
oltage Gain
-
dB
f
IN
-Input Frequency
25 30 35 40 45 50
90

80

70

60

50

40

30

20

10
0
V
CC
=5V
R
2
=130k
V
i
=30
Vp-p
Gain vs. Capacitance(C
1
)
A
V
-
V
oltage Gain
-
dB
C
I
-Capacitance-pF
Frequency
1000 2000 3000 4000 5000
82

78



74



70



66

Frequency vs. Resistance (R
2
)
f
o

-
Frequency
-
kHz
R
2
-Resistance-k
40 60 80 100 120 140 160 180 200


90

80

70

60

50

40

30

20
Vcc=5V
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