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Datasheet: HMC342LC4 (Hittite Microwave Corporation)

13 - 25 GHz, LNA, 22dB Gain, +20dBm OIP3, 3.5dB NF

 

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Hittite Microwave Corporation
8
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T
8 - 112
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
GaAs PHEMT LOW NOISE
AMPLIFIER, 13 - 25 GHz

v00.1104
General Description
Features
Functional Diagram
The HMC342LC4 is a GaAs PHEMT MMIC Low
Noise Amplifi er housed in a leadless "Pb free"
RoHS compliant SMT package. Operating from
13 to 25 GHz, the amplifi er provides 22 dB of gain
and a noise fi gure of 3.5 dB from a single +3.0
V supply voltage. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of use. The
HMC342LC4 allows the use of surface mount
manufacturing techniques.
3.5 dB Noise Figure
22 dB Gain
+3.0 V @ 43 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Electrical Specifi cations,
T
A
= +25 C, Vdd = +3V, Idd = 43 mA
Typical Applications
The HMC342LC4 is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military End-Use
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
13 - 18
18 - 22
22 - 25
GHz
Gain
19
22
17
20
16
19
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
0.025
0.035
dB/ C
Noise Figure
3.5
4.0
3.5
4.0
3.5
4.5
dB
Input Return Loss
15
15
10
dB
Output Return Loss
15
20
15
dB
Output Power for 1 dB Compression (P1dB)
7
8
9
dBm
Saturated Output Power (Psat)
9
11
11.5
dBm
Output Third Order Intercept (IP3)
16
19
20
dBm
Supply Current (Idd) (Vdd = +3V)
43
43
43
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC342LC4
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs PHEMT LOW NOISE
AMPLIFIER, 13 - 25 GHz

v00.1104
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Output IP3 vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
8
10
12
14
16
18
20
22
24
26
28
30
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
GaAs PHEMT LOW NOISE
AMPLIFIER, 13 - 25 GHz

v00.1104
Power Compression @ 20 GHz
P1dB vs. Temperature
Psat vs. Temperature
Gain, Power & Noise Figure
vs. Supply Voltage @ 20 GHz
Reverse Isolation vs. Temperature
0
2
4
6
8
10
12
14
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
2.7
3
3.3
Gain
P1dB
Psat
Noise Figure
GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB)
Vdd Supply Voltage (Vdc)
-60
-50
-40
-30
-20
-10
0
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
12
14
16
18
20
22
24
26
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
GaAs PHEMT LOW NOISE
AMPLIFIER, 13 - 25 GHz

v00.1104
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
0 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 3.62 mW/C above 85 C)
0.326 W
Thermal Resistance
(channel to ground paddle)
276 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Vdd (Vdc)
Idd (mA)
+2.7
42
+3.0
43
+3.3
44
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown above.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM C
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1, 5 - 14,
18 - 20, 22 - 24
N/C
No connection required. These pins may be connected to
RF/DC ground without affecting performance.
2, 4, 15, 17
GND
Package bottom has an exposed metal paddle that must
also be connected to RF/DC ground.
3
RFIN
This pin is AC coupled and matched to 50 Ohms from
13 - 25 GHz.
16
RFOUT
This pin is AC coupled and matched to 50 Ohms from
13 - 25 GHz.
21
Vdd
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF, 1000pF, and 2.2
F are required.
HMC342LC4
GaAs PHEMT LOW NOISE
AMPLIFIER, 13 - 25 GHz

v00.1104
Pin Descriptions
Application Circuit
Component
Value
C1
100 pF
C2
1,000 pF
C3
2.2 F
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8 - 117
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
GaAs PHEMT LOW NOISE
AMPLIFIER, 13 - 25 GHz

v00.1104
Evaluation PCB
Item
Description
J1, J2
2.92 mm PC mount K-connector
J3, J4
DC Pin
C1
100 pF capacitor, 0402 pkg.
C2
1,000 pF Capacitor, 0603 pkg.
C3
2.2F Capacitor, Tantalum
U1
HMC342LC4 Amplifi er
PCB**
108535 Evaluation PCB
** Circuit Board Material: Rogers 4350.
*Reference this number when ordering complete evaluation PCB.
List of Material for Evaluation PCB 110209*
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A suffi cient number of VIA holes should be used
to connect the top and bottom ground planes. The
evaluation board should be mounted to an appropri-
ate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
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