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Datasheet: HMC308 (Hittite Microwave Corporation)

General Purpose 100 Mw Gaas Mmic Amplifier, 0.8 - 3.8 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
8 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC308
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

v03.1103
General Description
Features
Functional Diagram
The HMC308 is a low cost MESFET MMIC ampli-
fi er that operates from a single +3 to +5V supply
from 0.8 to 3.8 GHz. The surface mount SOT26
amplifi er can be used as a broadband amplifi er
stage or used with external matching for optimized
narrow band applications. With Vdd biased at +5V,
the HMC308 offers 18 dB of gain and +20 dBm of
saturated output power while requiring only 53 mA
of current. This amplifi er is ideal as a driver amplifi er
for transmitters or for use as a local oscillator (LO)
amplifi er to increase drive levels for passive mixers.
The amplifi er occupies 0.014 in
2
(9 mm
2
), making it
ideal for compact radio designs.
Gain: 18 dB
P1dB Output Power: +17 dBm@ +5V
Single Supply: +3V or +5V
No External Components
Integrated DC Blocks
Ultra Small Package: SOT26
Electrical Specifi cations,
T
A
= +25 C, as a function of Vdd
Typical Applications
Broadband or Narrow Band Applications:
Cellular/PCS/3G
Fixed Wireless & Telematics
Cable Modem Termination Systems
WLAN, Bluetooth & RFID
Parameter
Vdd = +3V
Vdd = +5V
Vdd = +5V
Vdd = +5V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
2.3 - 2.7
0.8 - 2.3
2.3 - 2.7
2.7 - 3.8
GHz
Gain
13
15.5
14
18
13
16
10
13
dB
Gain Variation over Temperature
0.025
0.035
0.025
0.035
0.025
0.035
0.025
0.035
dB/C
Input Return Loss
11
8
11
13
dB
Output Return Loss
17
13
12
13
dB
Output Power for 1 dB
Compression (P1dB)
12
14
14
17
13.5
16.5
12
15
dBm
Saturated Output Power (Psat)
17
20
19.5
17
dBm
Output Third Order Intercept (IP3)
23
26
27
30
26
29
24
27
dBm
Noise Figure
7
7.5
7
7
dB
Supply Current (Idd)
50
53
53
53
mA
MICROWAVE CORPORATION
8 - 43
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
Vdd=+5V
Vdd=+3V
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
3
3.5
4
S11 Vdd=+5V
S22 Vdd=+5V
S11 Vdd=+3V
S22 Vdd=+3V
RETURN LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0.5
1
1.5
2
2.5
3
3.5
4
Vdd=+5V
Vdd=+3V
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
HMC308
Gain vs. Temperature @ Vdd = +5V
Gain vs. Temperature @ Vdd = +3V
P1dB vs. Vdd Bias
Reverse Isolation vs. Vdd Bias
Broadband Gain
& Return Loss @ Vdd = +5V
Input & Output
Return Loss vs. Vdd Bias
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

v03.1103
MICROWAVE CORPORATION
8 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
HMC308
Psat vs. Temperature @ Vdd = +5V
P1dB vs. Temperature @ Vdd = +5V
Power Compression
@ 2.0 GHz, Vdd = +5V
Power Compression
@ 2.5 GHz, Vdd = +5V
Output IP3
vs. Temperature @ Vdd = +5V
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

v03.1103
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 45
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
20
22
24
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
HMC308
Psat vs. Temperature @ Vdd = +3V
P1dB vs. Temperature @ Vdd = +3V
Power Compression
@ 2.0 GHz, Vdd = +3V
Power Compression
@ 2.5 GHz, Vdd = +3V
Output IP3
vs. Temperature @ Vdd = +3V
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

v03.1103
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
0.5
1
1.5
2
2.5
3
3.5
4
+25C
+85C
-40C
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC308
Absolute Maximum Ratings
Outline Drawing
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+10 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 6.25 mW/C above 85 C)
0.406 W
Thermal Resistance
(channel to lead)
160 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
v03.1103
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+2.5
49
+3.0
50
+3.5
51
+4.5
50
+5.0
53
+5.5
54
MICROWAVE CORPORATION
8 - 47
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC308
v03.1103
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

Pin Number
Function
Description
Interface Schematic
1
RF OUT
This pin is AC coupled and matched to 50 Ohms.
2, 5, 6
GND
These pins must be connected to RF/DC ground.
3
Vdd
Power supply voltage.
4
RF IN
This pin is AC coupled and matched to 50 Ohms.
Pin Descriptions
MICROWAVE CORPORATION
8 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Evaluation PCB
The circuit board used in the fi nal application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads should be con-
nected directly to the ground plane similar to that shown. A
suffi cient number of VIA holes should be used to connect
the top and bottom ground planes. The evaluation circuit
board shown is available from Hittite upon request.
List of Material
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

Item
Description
J1, J2
PC Mount SMA Connector
J3, J4
DC Pins
U1
HMC308 Amplifi er
PCB*
103220 Evaluation Board
*Circuit Board Material: Roger 4350
v03.1103
HMC308
MICROWAVE CORPORATION
8 - 49
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC308
Notes:
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz

v03.1103
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