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Datasheet: HMC261LM1 (Hittite Microwave Corporation)

Smt Distributed Gaas Mmic Amplifier 20 - 32 Ghz

 

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Hittite Microwave Corporation
1 - 8
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
MPLIFIERS
1
SMT
Features
SMT mmWAVE PACKAGE
13 dB GAIN
P1dB OUTPUT POWER: +12 dBm
SINGLE POSITIVE SUPPLY : +3V to +4V
NO GATE BIAS
The HMC261LM1 is a GaAs MMIC distributed
amplifier in a SMT leadless chip carrier package
covering 20 to 32 GHz. The LM1 is a true
surface mount broadband millimeterwave pack-
age offering low loss & excellent I/O match,
preserving MMIC chip performance. Utilizing a
GaAs PHEMT process the device offers 13 dB
gain and +14 dBm saturated output power from
a bias supply of +4V @ 75 mA. The packaged
amplifier enables economical PCB SMT assem-
bly for millimeterwave point-to-point radios,
LMDS, and SATCOM applications. As an alter-
native to chip-and-wire hybrid assemblies the
HMC261LM1 eliminates the need for
wirebonding, thereby providing a consistent
connection interface for the customer. All data is
with the non-hermetic, epoxy sealed LM1 pack-
aged LNA device mounted in a 50 ohm test
fixture. This part replaces the HMC261CB1 by
offering more bandwidth and gain.
General Description
Guaranteed Performance,
Vdd = +4V, -55 to +85 deg C
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A
m
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
HMC261LM1
V
01.0900
1 - 9
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
1
A
MPLIFIERS
SMT
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F R E QU E N C Y (G H z )
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
Gain @ Vdd = +4V
Return Loss @ Vdd = +3V
Reverse Isolation @Vdd = +3V
Gain @ Vdd = +3V
Reverse Isolation @Vdd = +4V
Return Loss @ Vdd = +4V
HMC261LM1
V
01.0900
1 - 10
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
MPLIFIERS
1
SMT
0
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P1dB Output Power vs.
Temperature @ Vdd= +3V
Psat vs. Temperature @ Vdd = +3V
P1dB Output Power vs.
Temperature @ Vdd= +4V
Psat vs. Temperature @ Vdd= +4V
HMC261LM1
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
V
01.0900
IP3 vs. Temperature @ Vdd = +3V
IP3 vs. Temperature @ Vdd = +4V
1 - 11
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
1
A
MPLIFIERS
SMT
Absolute Maximum Ratings
Outline Drawing
Functional Diagram
HMC261LM1
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SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
V
01.0900
1. MATERIAL:
A) PACKAGE BODY & LID: PLASTIC.
B) PIN CONTACT : COPPER, 0.5 OUNCE.
2. PLATING : ELECTROLYTIC GOLD (20 - 50 MICROINCHES TYPICAL) OVER
ELECTROLYTIC NICKEL (50 MICROINCHES MINIMUM).
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).UNLESS OTHERWISE SPECIFIED
ALL TOLERANCES ARE 0.005 ( 0.13).
4. ALL GROUNDS MUST BE SOLDERED TO THE PCB RF GROUND.
5. SEE APPLICATION NOTE FOR RECOMMENDED ATTACHMENT TECHNIQUE TO PCB.
1 - 12
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
MPLIFIERS
1
SMT
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
V
01.0900
HMC261LM1
HMC261LM1 Evaluation PCB
Suggested Ground Via Size:
0.010" (0.25) and Qty: 8 to 12
0.057
[1.45]
0.053
[1.35]
0.086
[2.18]
0.150
[3.81]
0.039
[0.99]
0.078
[1.98]
0.018
[0.46]
0.018
[0.46]
.003 A B
ALL FEATURES
-A
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Evaluation Circuit Board Layout Design Details
The grounded Co-Planar Wave Guide (G-CPW) PCB input/output transitions allow use of Ground-Signal-
Ground (GSG) probes for testing. Suggested probe pitch is 400
m (16 mils). Alternatively, the board can
be mounted in a metal housing with 2.4 mm coaxial connectors.
LM1 Package Mounted to Evaluation PCB
Suggested LM1 PCB Land Pattern
Tolerance: 0.003" (0.08 mm)
LM1 Evaluation PCB
1 - 13
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
1
A
MPLIFIERS
SMT
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
V
01.0900
HMC261LM1
RF IN
RF OUT
GND
C1
C2
Vdd
HMC261LM1
HMC261LM1 Application Circuit
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1 - 14
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
A
MPLIFIERS
1
SMT
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
V
01.0900
HMC261LM1
HMC261LM1 Recommended SMT Attachment Technique
Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting
The HMC LM1 package was designed to be compatible with
high volume surface mount PCB assembly processes. The
LM1 package requires a specific mounting pattern to allow
proper mechanical attachment and to optimize electrical
performance at millimeterwave frequencies. This PCB layout
pattern can be found on each LM1 product data sheet. It can
also be provided as an electronic drawing upon request from
Hittite Sales & Application Engineering.
Follow these precautions to avoid permanent damage:
Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. LM1 devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC & ground contact areas.
Static Sensitivity: Follow ESD precautions to protect against
ESD strikes ( see catalog page 8 - 2 ).
General Handling: Handle the LM1 package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure
to the top of the lid.
Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is
not recommended. Conductive epoxy attachment is not recommended.
Solder Paste
Solder paste should be selected based on the user's experience and be compatible with the metallization systems
used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes.
Solder Paste Application
Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder
paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical
& electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies.
Solder Reflow
The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder
reflow profile is suggested above.
Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies.
The thermocouple should be moved to various positions on the board to account for edge and corner effects and
varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the
location of the device.
Follow solder paste and oven vendor's recommendations when developing a solder reflow profile. A standard
profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to
thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to
evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off.
The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to with-
stand a peak temperature of 235C for 15 seconds. Verify that the profile will not expose device to temperatures in
excess of 235C.
Cleaning
A water-based flux wash may be used.
25
50
75
100
125
150
175
200
225
0
1
2
3
4
5
6
7
8
TEMPER
ATU
R
E
(
0
C)
TIME (min)
Recommended solder reflow profile
for HMC LM1 SMT package
1 - 15
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
F
EBRUARY
2001
1
A
MPLIFIERS
SMT
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
V
01.0900
HMC261LM1
NOTES:
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