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Datasheet: HMC260 (Hittite Microwave Corporation)

Gaas Mmic Fundamental Mixer, 14 - 26 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
5 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
v01.0301
General Description
Features
Functional Diagram
Passive: No DC Bias Required
Input IP3: +20 dBm
LO/RF Isolation: 39 dB
Small Size: 0.55mm
2
Electrical Specifi cations,
T
A
= +25 C
Typical Applications
The HMC260 is ideal for:
Point to Point Radios
Point to Multi Point Radios
*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
The HMC260 is a passive double balanced mixer
that can be used as an upconverter or down-
converter between 14 and 26 GHz. The minia-
ture monolithic mixer (MMIC) requires no external
components or matching circuitry. The HMC260
provides excellent LO to RF and LO to IF sup-
pression due to optimized balun structures. The
mixer operates with LO drive levels above +9
dBm. Measurements were made with the chip
mounted and bonded into in a 50 ohm test fi xture.
Data includes the parasitic effects of wire bond
assembly. Connections were made with a 3 mil
ribbon bond with minimal length (<12 mil).
Parameter
LO = +13 dBm, IF = 1 GHz
Units
Min.
Typ.
Max.
Frequency Range, RF & LO
14 - 26
GHz
Frequency Range, IF
DC - 8
GHz
Conversion Loss
7.5
10.5
dB
Noise Figure (SSB)
7.5
10.5
dB
LO to RF Isolation
30
39
dB
LO to IF Isolation
25
35
dB
RF to IF Isolation
18
25
dB
IP3 (Input)
13
20
dBm
IP2 (Input)
45
55
dBm
1 dB Gain Compression (Input)
6
11
dBm
MICROWAVE CORPORATION
5 - 45
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0301
-15
-12
-9
-6
-3
0
12
14
16
18
20
22
24
26
+ 25 C
+ 85 C
- 55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
12
14
16
18
20
22
24
26
RF/IF
LO/RF
LO/IF
ISOLATION (dB)
FREQUENCY (GHz)
Conversion Gain vs.
Temperature @ LO = +13 dBm
HMC260
Conversion Gain vs. LO Drive
-15
-12
-9
-6
-3
0
12
14
16
18
20
22
24
26
+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
Isolation @ LO = +13 dBm
-20
-16
-12
-8
-4
0
0
2
4
6
8
10
12
IF Return Loss
Conversion Gain
RESPONSE (dB)
FREQUENCY (GHz)
IF Bandwidth @ LO = +13 dBm
-25
-20
-15
-10
-5
0
12
14
16
18
20
22
24
26
LO
RF
RETURNLOSS (dB)
FREQUENCY (GHz)
Return Loss @ LO = +13 dBm
-20
-16
-12
-8
-4
0
12
14
16
18
20
22
24
26
CONVERSION GAIN (dB)
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +13 dBm
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
MICROWAVE CORPORATION
5 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
v01.0301
HMC260
MxN Spurious Outputs
40
50
60
70
80
90
100
14
16
18
20
22
24
26
+ 25 C
+ 85 C
- 55 C
SECOND ORDER INTERCEPT (dBm)
LO FREQUENCY (GHz)
Input IP2 vs.
Temperature @ LO = +13 dBm *
0
5
10
15
20
25
14
16
18
20
22
24
26
+ 11 dBm
+ 13 dBm
+ 15 dBm
THIRD ORDER INTERCEPT (dBm)
LO FREQUENCY (GHz)
0
5
10
15
20
25
14
16
18
20
22
24
26
+ 25 C
+ 85 C
- 55 C
THIRD ORDER INTERCEPT (dBm)
LO FREQUENCY (GHz)
Input IP3 vs. LO Drive *
Input IP3 vs.
Temperature @ LO = +13 dBm *
40
50
60
70
80
90
100
14
16
18
20
22
24
26
+ 11 dBm
+ 13 dBm
+ 15 dBm
SECOND ORDER INTERCEPT (dBm)
LO FREQUENCY (GHz)
Input IP2 vs. LO Drive *
* Two-tone input power = -5 dBm each tone, 1 MHz spacing.
Input P1dB vs.
Temperature @ LO = +13 dBm
6
8
10
12
14
16
14
15
16
17
18
19
20
21
22
23
24
25
26
+ 25 C
+ 85 C
- 55 C
P1dB (dBm)
FREQUENCY (GHz)
nLO
mRF
0
1
2
3
4
0
xx
9
19
xx
xx
1
20
0
46
37
xx
2
64
72
68
82
95
3
xx
92
99
83
94
4
xx
xx
102
>110
>110
RF = 21 GHz @ -10 dBm
LO = 22 GHz @ +13 dBm
All values in dBc below the IF output power level.
MICROWAVE CORPORATION
5 - 47
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
v01.0301
HMC260
Outline Drawing
(See Handling Mounting Bonding Note)
Absolute Maximum Ratings
RF / IF Input
+15 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
IF DC Current
4 mA
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. TYPICAL BOND PAD IS .004" SQUARE.
4. BOND PAD SPACING CENTER TO CENTER IS .006".
5. BACKSIDE METALLIZATION: GOLD.
6. BOND PAD METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
MICROWAVE CORPORATION
5 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
HMC260
v01.0301
MIC Assembly Techniques
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to
minimize inductance on RF, LO & IF ports.
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Ribbon Bond
Ribbon Bond
MICROWAVE CORPORATION
5 - 49
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - CHIP
5
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC260
v01.0301
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-
60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with
a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A
minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than
12 mils (0.31 mm).
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