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Datasheet: HMC240 (Hittite Microwave Corporation)

Gaas Mmic Spdt Switch Dc - 4.0 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
7 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.4
0.5
0.6
0.9
0.7
0.8
0.9
1.4
dB
dB
dB
dB
Isolation
DC - 4.0 GHz
24
28
dB
Return Loss
"On State"
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
22
16
14
11
dB
dB
dB
dB
Input Power for 1 dB Compression
0.5 - 1.0 GHz
0.5 - 4.0 GHz
25
23
30
29
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
0.5 - 1.0 GHz
0.5 - 4.0 GHz
43
40
48
45
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
3
10
ns
ns
HMC240
GaAs MMIC SPDT SWITCH
DC - 4.0 GHz
v00.0403
General Description
Features
Functional Diagram
The HMC240 is a low cost GaAs MESFET SPDT
switch chip. Covering DC to 4.0 GHz, this switch
offers high isolation and low insertion loss. RF1
and RF2 are refl ective shorts when "off". The
switch can operate using either two negative con-
trol logic inputs of -5/0V or two positive control
voltage logic inputs of 0/+5V. All data is tested
with the chip in a 50 Ohm test fi xture connected
via 0.025 mm (1 mil) diameter wire bonds of 0.31
mm (12 mils) length.
Broadband Performance: DC - 4.0 GHz
Low Insertion Loss: 0.5 dB @ 2.0 GHz
High IIP3: +48 dBm
Small Size: 0.70 mm x 0.70 mm x 0.13 mm
Electrical Specifi cations,
T
A
= +25 C,
With 0/-5V Control or +5/0V Control, 50 Ohm System
Typical Applications
The HMC240 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Pads 3 & 7 are alternate A & B Control Inputs.
MICROWAVE CORPORATION
7 - 9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC240
Input Third Order Intercept Point
GaAs MMIC SPDT SWITCH
DC - 4.0 GHz
v00.0403
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss vs. Temperature
Isolation
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
+25 C
+85 C
-55 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
RFC
RF1, RF2, ON
RETURN LOSS (dB)
FREQUENCY (GHz)
30
35
40
45
50
55
60
+25 C
+85 C
-40 C
0.5
1
1.5
2
2.5
3
3.5
4
IN
PU
T
IP3 (dBm)
FREQUENCY (GHz)
22
23
24
25
26
27
28
29
30
31
32
0.5
1
1.5
2
2.5
3
3.5
4
1.0 dB Compression Point
0.1 dB Compression Point
INPUT P1dB (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
7 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
HMC240
GaAs MMIC SPDT SWITCH
DC - 4.0 GHz
v00.0403
Truth Table:
Positive Control Voltage
Absolute Maximum Ratings
Control Input
Control Current
Signal Path State
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RFC to
RF1
RFC to
RF2
0
+5
-50
50
ON
OFF
+5
0
50
-50
OFF
ON
RF Input Power
V
ctrl
= 0/+5 (-5)V
< 0.5 GHz
0.5 - 4 GHz
+27 dBm
+34 dBm
Control Voltage Range (A & B= 0/+5V)
-0.2 to +10 Vdc
Control Voltage Range (A & B= -5/0V)
-10 to +0.2 Vdc
Storage Temperature
-65 to +150 deg C
Operating Temperature
-55 to +85 deg C
Positive Control Voltage
State
Bias Condition
Low
0 Vdc @ 10 uA
High
+3 Vdc @ 10 uA to +8 Vdc @ 70 uA
Control input voltage tolerences are 0.2 Vdc.
Note:
This part can be controlled with either positive or negative voltages per the above table. DC blocks are required at ports RFC, RF1
and RF2 if positive control voltage is used.
Truth Table:
Negative Control Voltage
Control Input
Control Current
Signal Path State
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RFC to
RF1
RFC to
RF2
-5
0
-50
50
ON
OFF
0
-5
50
-50
OFF
ON
Negative Control Voltage
State
Bias Condition
Low
-3 Vdc @ 10 uA to -8 Vdc @ 70 uA
High
0 Vdc @ 10 uA
Control input voltage tolerences are 0.2 Vdc.
MICROWAVE CORPORATION
7 - 11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
HMC240
GaAs MMIC SPDT SWITCH
DC - 4.0 GHz
v00.0403
Outline Drawing
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE
THICKNESS IS 0.005".
3. TYPICAL BOND PAD IS 0.004" SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006" CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. PADS 4 AND 6 MUST BE CONNECTED TO RF/DC GROUND.
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1, 7
A, A (alt.)
See truth table and control voltage table.
Connect either pad 1 or pad 7 to control logic input.
2, 5, 8
RF1, RFC, RF2
These pads are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
3, 9
B, B (alt.)
See truth table and control voltage table.
Connect either pad 3 or pad 9 to control logic input.
4, 6
AC GND
Must be connected to RF/DC ground.
MICROWAVE CORPORATION
7 - 12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
HMC240
GaAs MMIC SPDT SWITCH
DC - 4.0 GHz
v00.0403
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
fl at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
MICROWAVE CORPORATION
7 - 13
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
HMC240
GaAs MMIC SPDT SWITCH
DC - 4.0 GHz
v00.0403
Notes:
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