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Datasheet: HMC232C8 (Hittite Microwave Corporation)

Gaas Mmic Smt High Isolation Spdt Switch, Dc - 8.0 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
14 - 88
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
v02.1203
General Description
Features
Functional Diagram
The HMC232C8 is a broadband high isolation
non-refl ective GaAs MESFET SPDT switch in a
non-hermetic surface mount ceramic package.
Covering DC to 8.0 GHz, the switch features >55
dB isolation up to 2 GHz and >42 dB isolation
up to 8.0 GHz. The switch operates using
complementary negative control voltage logic
lines of -5/0V and requires no bias supply. This
product is a form, fi t & functional replacement for
the HMC132C8.
Isolation: 55 dB @ 2.0 GHz
43 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Refl ective Design
Surface Mount Ceramic Package
Direct Replacement for HMC132C8
Electrical Specifi cations,
T
A
= +25 C, With 0/-5V Control, 50 Ohm System
Typical Applications
The HMC232C8 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military Radios, Radar & ECM
Test Instrumentation
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
1.2
1.6
2.2
1.5
2.0
2.8
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
50
38
37
55
43
42
dB
dB
dB
Return Loss
"On State"
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
19
12
10
dB
dB
dB
Return Loss RF1, RF2
"Off State"
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
13
8
7
dB
dB
dB
Input Power for 1 dB Compression
0.5 - 8.0 GHz
22
26
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 8.0 GHz
40
46
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
5
ns
ns
MICROWAVE CORPORATION
14 - 89
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Input Third Order Intercept Point
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss
Isolation
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
v02.1203
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
8
+ 25C
+ 85C
- 40C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
RFC
RF1, RF2 ON
RF1, RF2 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
15
20
25
30
35
0
1
2
3
4
5
6
7
8
1 dB Compression Point
0.1 dB Compression Point
INPUT P1dB (dBm)
FREQUENCY (GHz)
30
35
40
45
50
55
60
0
1
2
3
4
5
6
7
8
+ 25C
+ 85C
- 40C
INPUT IP3 (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
14 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
v02.1203
Truth Table
Absolute Maximum Ratings
Control Voltages
Outline Drawing
Control Input
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
ON
OFF
Low
High
OFF
ON
State
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
RF Input Power (Vctl= -5V)
(0.5 - 8 GHz)
+30 dBm (@ +50 C)
Control Voltage Range (A & B)
+1.0V to -7.5 Vdc
Channel Temperature
150 C
Thermal Resistance
94 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER
3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER
ELECTROLYTIC NICKEL 100-250 MICROINCHES.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID
SEAL PROTRUSION .005 PER SIDE.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Caution: Do not "Hot Switch" power levels greater than
+26 dBm (Vctl = 0/-5 Vdc).
MICROWAVE CORPORATION
14 - 91
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
v02.1203
Pin Descriptions
Suggested Driver Circuit
Pin Number
Function
Description
Interface Schematic
1, 4, 7
RF1, RF2, RFC
This pin is DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
2, 3, 8
GND
Package bottom must also
be connected to PCB RF ground.
5
A
See truth table and control voltage table.
6
B
See truth table and control voltage table.
MICROWAVE CORPORATION
14 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
v02.1203
Evaluation PCB
The circuit board used in the fi nal application should be
generated with proper RF circuit design techniques. Signal
lines at the RF port should have 50 ohm impedance and
the package ground leads and package bottom should be
connected directly to the ground plane similar to that shown
above. The evaluation circuit board shown above is avail-
able from Hittite Microwave Corporation upon request.
List of Material
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J6
DC Pin
R1, R2
100 Ohm Resistor, 0603 Pkg.
U1
HMC232C8 SPDT Switch
PCB*
107112 Evaluation PCB
* Circuit Board Material: Rogers 4350
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