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Datasheet: HMC232 (Hittite Microwave Corporation)

Gaas Mmic Spdt Non-reflective Switch, Dc - 15.0 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
7 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
HMC232
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
v02.1203
General Description
Features
Functional Diagram
The HMC232 is a broadband non-refl ective GaAs
MESFET SPDT MMIC chip. Covering DC to 15
GHz, the switch features over 55 dB isolation
at lower frequencies and over 45 dB at higher
frequencies due to the implementation of on-chip
via hole structures. The switch operates using two
negative control voltage logic lines (A&B) of -5/0V
and requires no Vee. Alternate A & B control pads
are provided to ease MIC implementation. All data
shown is tested with the chip in a 50 Ohm test fi xture
connected via 0.025 mm (1 mil) diameter wire bonds
of 0.5 mm (20 mils) length. This product is a form, fi t
& functional replacement for the HMC132.
High Isolation: >50 dB @ 10 GHz
Low Insertion Loss: 1.4 dB @ 6 GHz
Non-Refl ective Design
Die Size: 1.04 mm x 2.05 mm x 0.1 mm
Direct Replacement for HMC132
Electrical Specifi cations,
T
A
= +25 C, With 0/-5V Control, 50 Ohm System
Typical Applications
Broadband switch for DC - 15 GHz applications:
Fiber Optics
Microwave Radio
Military & Space
Test Equipment
VSAT
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
1.4
2.2
3.1
1.7
2.5
3.4
dB
db
dB
Isolation
DC - 6 GHz
DC - 10 GHz
DC - 15 GHz
50
45
40
55
50
45
dB
dB
dB
Return Loss
"On State"
DC - 6 GHz
DC - 15 GHz
18
12
dB
dB
Return Loss RF1, RF2
"Off State"
DC - 6 GHz
DC - 15 GHz
14
13
dB
dB
Input Power for 1 dB Compression
0.5 - 15 GHz
21
26
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 15 GHz
44
49
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 15 GHz
3
5
ns
ns
MICROWAVE CORPORATION
7 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
HMC232
Input Third Order Intercept Point
v02.1203
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss vs. Temperature
Isolation
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
-6
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
+25 C
+85 C
-55 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
RFC
RF1, RF2 ON
RF1, RF2 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
0.1 dB Compression Point
1 dB Compression Point
INPUT P1dB (dBm)
FREQUENCY (GHz)
30
35
40
45
50
55
60
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
+25 C
+85 C
-55 C
INPUT IP3 (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
7 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
HMC232
v02.1203
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
Truth Table
Absolute Maximum Ratings
Control Voltages
Outline Drawing
Control Input
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
ON
OFF
Low
High
OFF
ON
State
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
RF Input Power (Vctl = -5V)
(0.5 - 15 GHz)
+30 dBm (@ +50 C)
Control Voltage Range (A & B)
+1.0V to -7.5 Vdc
Channel Temperature
150 C
Thermal Resistance
92 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. BOND PADS ARE 0.004" SQUARE
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006"
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE OF DIE IS GROUND
7. DIE
THICKNESS IS .004"
8. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS
Caution: Do not "Hot Switch" power levels greater than +26 dBm
(Vctl = 0/-5 Vdc).
MICROWAVE CORPORATION
7 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
HMC232
v02.1203
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
Pad Number
Function
Description
Interface Schematic
2, 5, 8, 10
A
See truth table and control voltage table.
Alternate A & B control pads provided.
3, 6, 9
B
See truth table and control voltage table.
Alternate A & B control pads provided.
1, 4, 7
RF1, RFC, RF2
This pad is DC coupled and matched to 50 Ohms. Blocking capacitors
are required if the RF line potential is not equal to 0V.
GND
Die bottom must be connected to RF ground.
Pad Descriptions
Suggested Driver Circuit
MICROWAVE CORPORATION
7 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - CHIP
7
HMC232
v02.1203
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
Mounting & Bonding Techniques for Microwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for
bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.152 mm (6 mils).
Assembly Diagram
MICROWAVE CORPORATION
7 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
SWITCHES - CHIP
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and fl at.
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter
of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
HMC232
v02.1203
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 15.0 GHz
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