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Datasheet: HMC216MS8 (Hittite Microwave Corporation)

Gaas Mmic Smt Double-balanced Fet Mixer, 1.3 - 2.5 Ghz

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
12 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - SMT
12
HMC216MS8
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
v01.0801
General Description
Features
Functional Diagram
IP3 (Input): +25 dBm @ +11 dBm LO
LO Range = +3 to +11 dBm
Conversion Loss: 8.5 dB
LO / RF Isolation: 32 dB
Electrical Specifi cations,
T
A
= +25 C, As a Function of LO Drive, Vgg = -1.2 Vdc
Typical Applications
The HMC216MS8 is ideal for:
Base Stations
WirelessLAN
PCMCIA
Portable Wireless
The HMC216MS8 is an ultra miniature double-
balanced FET mixer in an 8 lead plastic surface
mount package (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel
planar transformer baluns on the chip. In addition
to an LO drive of +3 to +13 dBm, a gate voltage of
Vgg = -0.9 to -1.6 Vdc is required. The device can
be used as an upconverter or downconverter for
1900 or 2400 MHz applications. The consistent
MMIC performance will improve system opera-
tion and assure regulatory compliance.
Parameter
LO = +11 dBm
LO = +7 dBm
LO = +3 dBm
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF & LO
1.3 - 2.5
1.6 - 2.3
1.7 - 2.0
GHz
Frequency Range, IF
DC - 0.65
DC - 0.5
DC - 0.4
GHz
Conversion Loss
9
10.5
8.5
10
9
10.5
dB
Noise Figure (SSB)
9
10.5
8.5
10
9
10.5
dB
LO to RF Isolation
27
30
27
32
27
32
dB
LO to IF Isolation
17
20
17
20
17
20
dB
IP3 (Input)
21
25
14
18
8
12
dBm
1 dB Gain Compression (Input)
8
11
5
10
3
8
dBm
MICROWAVE CORPORATION
12 - 55
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - SMT
12
-22
-20
-18
-16
-14
-12
-10
-8
-6
1
1.5
2
2.5
3
CONVERSION LOSS (dB)
FREQUENCY (GHz)
-40 C
+25 C
+85 C
-60
-50
-40
-30
-20
-10
0
1
1.5
2
2.5
3
ISOLATION (dB)
FREQUENCY (GHz)
RF/IF
LO/RF
LO/IF
Conversion Loss vs
Temperature @ LO = +7 dBm
Isolation @ LO = +7 dBm
-20
-15
-10
-5
0
1
1.5
2
2.5
3
CONVERSION LOSS (dB)
FREQUENCY (GHz)
+3 dBm
+5 dBm
+11 dBm
+7 dBm
+9 dBm
Conversion Loss vs. LO Drive
v01.0801
-25
-20
-15
-10
-5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
CONVERSION LOSS (dB)
IF FREQUENCY (GHz)
Return Loss @ LO = +7 dBm
IF Bandwidth @ LO = +7 dBm
P1dB vs. Temperature for
LO = +7 dBm, Vgg = -1.2 Vdc
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
RETURN LOSS (dB)
FREQUENCY (GHz)
LO
RF
IF
2
4
6
8
10
12
14
1.2
1.4
1.6
1.8
2
2.2
2.4
P1dB (dBm)
FREQUENCY (GHz)
-40 C
+25 C
+85 C
HMC216MS8
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
MICROWAVE CORPORATION
12 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - SMT
12
Input IP3 vs. Temperature
and Vgg for @ LO = +7 dBm
10
15
20
25
30
-1.6
-1.5
-1.3
-1.2
-1.1
-0.9
-0.8
THIRD ORDER INTERCEPT (dBm)
GATE VOLTAGE (V)
+9 dBm
+5 dBm
+7 dBm
+11 dBm
v01.0801
HMC216MS8
Input IP2 vs. Temperature
and Vgg for @ LO = +7 dBm
Input IP3 vs. LO Drive and Vgg
MxN Spurious Outputs
Harmonics of LO
15
16
17
18
19
20
21
22
23
-1.6
-1.5
-1.3
-1.2
-1.1
-0.9
-0.8
THIRD ORDER INTERCEPT (dBm)
GATE VOLTAGE (V)
-40C
+85C
+25C
20
25
30
35
40
45
50
55
60
-1.6
-1.5
-1.3
-1.2
-1.1
-0.9
-0.8
SECOND ORDER INTERCEPT (dBm)
GATE VOLTAGE (V)
-40C
+85C
+25C
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
nLO
mRF
0
1
2
3
4
0
xx
-1
14
24
40
1
14
0
28
21
46
2
45
45
59
55
50
3
83
67
62
59
77
4
>105
>105
>105
85
96
RF = 1.975 GHz @ -10 dBm
LO = 1.8 GHz @ +7 dBm, Vgg = -1.2V
All values in dBc below IF power level (-1RF + 1LO).
LO Freq.
(GHz)
nLO Spur at RF Port
1
2
3
4
1.5
41
47
61
78
1.7
38
47
72
71
1.9
34
41
69
72
2.1
31
37
72
79
2.3
29
38
74
74
2.5
32
45
65
74
LO = +7 dBm, Vgg = 1.2V
Values in dBc below input LO level measured at the RF port.
MICROWAVE CORPORATION
12 - 57
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - SMT
12
Outline Drawing
Absolute Maximum Ratings
v01.0801
HMC216MS8
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
MICROWAVE CORPORATION
12 - 58
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MIXERS - SMT
12
Evaluation Circuit Board
v01.0801
HMC216MS8
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
List of Material
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4, J5
DC Pin
U1
HMC216MS8 Mixer
PCB*
102035 Evaluation Board
* Circuit Board Material: Rogers 4350
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A suffi cient number of VIA
holes should be used to connect the top and bottom
ground planes. The evaluation circuit board shown is
available from Hittite upon request.
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