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Datasheet: HMC205 (Hittite Microwave Corporation)

Gaas Mmic Passive Frequency Doubler, 6 - 12 Ghz Input

 

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Hittite Microwave Corporation
MICROWAVE CORPORATION
4 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
FREQ.
MUL
TIPLIERS - CHIP
4
HMC205
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 6 - 12 GHz INPUT

v02.1201
General Description
Features
Functional Diagram
Conversion Loss: 12 to 17 dB
Fo, 3Fo, 4Fo Isolation: 32 dB
Passive: No Bias Required
Electrical Specifi cations,
T
A
= +25 C, As a Function of Drive Level
Typical Applications
The HMC205 is a passive miniature frequency dou-
bler in a MMIC die. Suppression of undesired funda-
mental and higher order harmonics is 32 dB typical
with respect to input signal level. The doubler uti-
lizes the same GaAs Schottky diode/balun technol-
ogy found in Hittite MMIC mixers. It features small
size, no DC bias, and no measurable additive phase
noise onto the multiplied signal.
The HMC205 is suitable for:
Wireless Local Loop
LMDS, VSAT, and Pt to Pt Radios
Test Equipment
Input = +10 dBm
Input = +12 dBm
Input = +15 dBm
Parameter
Min.
Typ. Max.
Min.
Typ. Max.
Min.
Typ. Max.
Units
Frequency Range, Input
7.0 - 12.0
6.0 - 12.0
6.0 - 12.0
GHz
Frequency Range, Output
14.0 - 24.0
12.0 - 24.0
12.0 - 24.0
GHz
Conversion Loss
18
21
17
20
15
18
dB
FO Isolation
(with respect to input level)
28
32
dB
3FO Isolation
(with respect to input level)
36
40
dB
4FO Isolation
(with respect to input level)
26
32
dB
MICROWAVE CORPORATION
4 - 17
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
FREQ.
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TIPLIERS - CHIP
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-20
-15
-10
-5
0
6
7
8
9
10
11
12
CONVERSION GAIN (dB)
INPUT FREQUENCY (GHz)
+85 C
+25 C
-55 C
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC205
Conversion Gain vs Temperature
@ +15 dBm Drive Level
Isolation @ +15 dBm Drive Level*
Input Return Loss vs. Drive Level
Output Return Loss for
Several Input Frequencies
v02.1201
GaAs MMIC FREQUENCY
DOUBLER, 6 - 12 GHz INPUT

*With respect to input level
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
5
10
15
20
25
30
35
40
ISOLATION (dB)
FREQUENCY (GHz)
Fo
4Fo
3Fo
-20
-15
-10
-5
0
6
7
8
9
10
11
12
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
+8 dBm
+10 dBm
+14 dBm
+12 dBm
-20
-15
-10
-5
0
12
14
16
18
20
22
24
OUTPUT RETURN LOSS (dB)
OUTPUT FREQUENCY (GHz)
10 GHz In
8 GHz In 6 GHz In
12 GHz In
MICROWAVE CORPORATION
4 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
FREQ.
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TIPLIERS - CHIP
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v02.1201
HMC205
GaAs MMIC FREQUENCY
DOUBLER, 6 - 12 GHz INPUT

Conversion Gain @ 25C vs. Drive Level
Output Return Loss with 6 GHz Input
Conversion Gain @ -55C vs. Drive Level
Output Return Loss with 12 GHz Input
-40
-35
-30
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
CONVERSION GAIN (dB)
INPUT FREQUENCY (GHz)
+8 dBm
+10 dBm
+15 dBm
+12 dBm
Conversion Gain @ +85C vs. Drive Level
Output Return Loss with 10 GHz Input
-40
-35
-30
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
CONVERSION GAIN (dB)
INPUT FREQUENCY (GHz)
+8 dBm
+10 dBm
+15 dBm
+12 dBm
-20
-15
-10
-5
0
12
14
16
18
20
22
24
OUTPUT RETURN LOSS (dB)
OUTPUT FREQUENCY (GHz)
+8 dBm
+10 dBm
+12 dBm
+14 dBm
-20
-15
-10
-5
0
12
14
16
18
20
22
24
OUTPUT RETURN LOSS (dB)
OUTPUT FREQUENCY (GHz)
+8 dBm
+10 dBm
+12 dBm
+14 dBm
-40
-35
-30
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
CONVERSION GAIN (dB)
INPUT FREQUENCY (GHz)
+8 dBm
+10 dBm
+15 dBm
+12 dBm
-20
-15
-10
-5
0
12
14
16
18
20
22
24
OUTPUT RETURN LOSS (dB)
OUTPUT FREQUENCY (GHz)
+8 dBm
+10 dBm
+12 dBm
+14 dBm
MICROWAVE CORPORATION
4 - 19
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
FREQ.
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TIPLIERS - CHIP
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Absolute Maximum Ratings
Outline Drawing
v02.1201
HMC205
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. BOND PADS ARE .004" SQUARE
3. TYPICAL BOND PAD SPACING CENTER TO
CENTER IS .006" EXCEPT AS SHOWN.
4. BACKSIDE METALLIZATION: GOLD
5. BACKSIDE METAL IS GROUND.
6. BOND PAD METALLIZATION: GOLD
GaAs MMIC FREQUENCY
DOUBLER, 6 - 12 GHz INPUT

Input Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
MICROWAVE CORPORATION
4 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
FREQ.
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TIPLIERS - CHIP
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Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid clean-
ing systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
ductive epoxy. The mounting surface should be clean and fl at.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding wiht a nominal stage tem-
perature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams
is recommended. Use the minimum level of ultrasonic energry to achieve reliable wirebonds. Wirebonds
should be started on the chip and terminated on the package. RF bonds should be as short as possible.
v02.1201
HMC205
GaAs MMIC FREQUENCY
DOUBLER, 6 - 12 GHz INPUT

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